Amorphization of Zr/Ni Bilayers by Ion-Beam-Mixing

1993 ◽  
Vol 311 ◽  
Author(s):  
Jacek Jagelski ◽  
L. Thome ◽  
M. Kopcewicz
Keyword(s):  
Amorphous Phase ◽  
Room Temperature ◽  
Ion Beam ◽  
Irradiation Temperature ◽  
Ion Beam Mixing ◽  
Bilayer System ◽  
Incident Atom

ABSTRACTThe amorphization process induced by ion-beam-imxing was studied for the Zr/Ni bilayer system by means of the RBS/channelling and CEMS techniques. The number of atoms mixed per one incident atom was found to be the same for σ100 K and 300 K irradiations, whereas it was increased by the factor of 2.5 for 500 K irradiation what indicates, that the change in the mixing mechanism occurred above room temperature. The results show that amorphization of the Zr/Ni system is controlled by the number of mixed atoms and depends on the irradiation temperature. A change in CEMS spectra was observed at σ770 K what suggests that recrystallization of the amorphous phase occurs at this temperature.

Ar+ Induced Interfacial Mixinc in the Pd/Cu Bilayer System

1989 ◽  
Vol 157 ◽  
Author(s):  
H.K. Kim ◽  
J.H. Song ◽  
S.K. Kim ◽  
K. Jeong ◽  
C.N. Whang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Layer By Layer ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Bilayer System ◽  
Radiation Enhanced Diffusion

ABSTRACTIon beam mixing of a Pd/Cu bilayer is studied using irradiation with 80 keV Ar+ ions at room temperature. RBS analysis shows that intermixing has occurred across the Pd/Cu interface, and that the mixing amount increases with increasing ion dose, which agrees well with a model for radiation enhanced diffusion. It is found that the Cu3Pd phase grows in a layer-by-layer manner.

scholarly journals AMORPHOUS PHASE FORMATION OF Ni/Ti BILAYER SYSTEM BY SOLID STATE REACTION AND ION BEAM MIXING

1990 ◽  
Vol 39 (7) ◽  
pp. 101
Author(s):  
LIU WEN-HONG ◽  
ZHU DE-ZHANG ◽  
WANG ZHEN-XIA ◽  
LIU XIANG-HUAI
Keyword(s):  
Solid State ◽  
Amorphous Phase ◽  
Phase Formation ◽  
Solid State Reaction ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Bilayer System ◽  
Amorphous Phase Formation

Cu-Zr-Nb Crystalline-Amorphous Composites Investigated by Thermodynamic Calculation and Ion Beam Mixing Experiments

2013 ◽  
Vol 745-746 ◽  
pp. 793-798
Author(s):  
S.H. Liang ◽  
T.L. Wang ◽  
X. Bai ◽  
J.H. Li
Keyword(s):  
Metallic Glass ◽  
Amorphous Phase ◽  
Solid Solutions ◽  
Metallic Glasses ◽  
Thermodynamic Calculation ◽  
Ion Beam ◽  
Multilayered Films ◽  
Ion Beam Mixing ◽  
Supersaturated Solid Solutions

The formation of Cu-Zr-Nb metallic glass was predicted by thermodynamic calculation and then five Cu-Zr-Nb ternary metallic multilayered films were designed and prepared by electron depositing. The metastable supersaturated solid solutions, amorphous phase as well as their composites were able to be obtained in these Cu-Zr-Nb metallic multilayered films upon ion beam mixing. The observations provided a clew to improve the ductibility of the metallic glasses. Some possible interpretations were presented concerning the formation of the crystalline-amorphous composite.

The quasicrystalline transformation in the AlCr system

1986 ◽  
Vol 1 (2) ◽  
pp. 237-242 ◽  
Author(s):  
D.A. Lilienfeld ◽  
M. Nastasi ◽  
H.H. Johnson ◽  
D.G. Ast ◽  
J.W. Mayer
Keyword(s):  
Amorphous Phase ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Thermal Transformation ◽  
Reciprocal Lattice ◽  
Starting State ◽  
Complete Set ◽  
Quasicrystalline State

Amorphous Al80Cr20 films were made by coevaporation and by room temperature ion irradiation of the coevaporated films. The amorphous phase was transformed into the quasicrystalline state through two routes: thermal and ion beam assisted anneal. The intensity of the quasicrystalline electron diffraction pattern increases continuously within the annealing temperature range from 547°to 607°C. The starting state of the films (as-deposited or ion-irradiated codeposited) had no effect on the thermal transformation to the quasicrystalline state. Ion irradiation of the amorphous phase at 200°C produces a more complete set of icosahedral diffraction lines. Icosahedral AlCr has the same reciprocal lattice spacings as icosahedral AlMn.

Formation and Transformation of Amorphous Silicide Alloys

1983 ◽  
Vol 31 ◽  
Author(s):  
K.N. Tu ◽  
T. Tien ◽  
S.R. Herd
Keyword(s):  
Vapor Deposition ◽  
Room Temperature ◽  
Ion Beam ◽  
Conductivity Measurement ◽  
Rapid Quenching ◽  
Slow Heating ◽  
Electrical Conductivity Measurement ◽  
Ion Beam Mixing ◽  
Transmission Electron ◽  
Amorphous Si

ABSTRACTAmorphous silicide films can be formed by rapid quenching using techniques of vapor deposition and ion beam mixing and also by slow heating using solid state interdiffusion and reaction. For example, amorphous TaSi2 films can be formed by sputtering or dual electron guns co-deposition. Amorphous Pt2Si3 films have been produced by mixing PtSi and Si at room temperature with an ion beam at about 100 to 300keV. Recently, an amorphous Rh-Si alloy phase has been made by slowly heating to 300°C a very thin crystalline Rh films (∼50Å) on amorphous Si. The formation and crystallization behavior of these amorphous silicide alloys has been studied by transmission electron microscopy and electrical conductivity measurement.

Formation of AlGaAs by ion beam mixing of Al films on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 690-691
Author(s):  
R.S. Deol ◽  
E.A. Kamil ◽  
K.P. Homewood ◽  
T. Kobayashi
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Ion Beam ◽  
Chamber Pressure ◽  
Pure Aluminium ◽  
Material Synthesis ◽  
Ion Beam Mixing ◽  
Implantation Energy ◽  
Gaas Substrates ◽  
Heated Filament

There is considerable interest in the use of ion implantation for material synthesis. The synthesis of AlGaAs by dual implants of As+ and Al+ into GaAs followed by rapid thermal annealing (RTA) has been reported recently. In this paper results relating to the formation of AlxGa1-xAs by depositing thin Al films on GaAs substrates and irradiating with arsenic ions followed by RTA are presented.Aluminium layers of 580Å or 650Å in thickness were deposited onto liquid encapsulated Czochralski (LEC) grown samples of semi-insulating <100> GaAs. The deposition was done using pure aluminium on a heated filament at a chamber pressure of ∽10−6 Torr with the thickness being measured using a talystep. Subsquently As+ implants were performed at room temperature using an energy of 150, 200 or 300 keV and a dose of 3x1016 or 1x1017 cm−2. The implantation energy was selected to ensure that the projected depth exceeded the thickness of the Al overlayer employed.

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