Formation and Transformation of Amorphous Silicide Alloys

1983 ◽  
Vol 31 ◽  
Author(s):  
K.N. Tu ◽  
T. Tien ◽  
S.R. Herd
Keyword(s):  
Vapor Deposition ◽  
Room Temperature ◽  
Ion Beam ◽  
Conductivity Measurement ◽  
Rapid Quenching ◽  
Slow Heating ◽  
Electrical Conductivity Measurement ◽  
Ion Beam Mixing ◽  
Transmission Electron ◽  
Amorphous Si

ABSTRACTAmorphous silicide films can be formed by rapid quenching using techniques of vapor deposition and ion beam mixing and also by slow heating using solid state interdiffusion and reaction. For example, amorphous TaSi2 films can be formed by sputtering or dual electron guns co-deposition. Amorphous Pt2Si3 films have been produced by mixing PtSi and Si at room temperature with an ion beam at about 100 to 300keV. Recently, an amorphous Rh-Si alloy phase has been made by slowly heating to 300°C a very thin crystalline Rh films (∼50Å) on amorphous Si. The formation and crystallization behavior of these amorphous silicide alloys has been studied by transmission electron microscopy and electrical conductivity measurement.

Altering the Oxidation Resistance of Iron Via ion Beam Alloying

1994 ◽  
Vol 373 ◽  
Author(s):  
Ivan H. Murzin ◽  
Donald I. Potter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Vapor Deposition ◽  
Rate Constants ◽  
Oxidation Behavior ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Oxidation Rates ◽  
Parabolic Kinetics ◽  
Transmission Electron

AbstractFe-Cr, Fe-Y and Fe-Cr-Y surface alloys were produced by direct ion implantation, ion beam mixing, and combinations of implantation and vapor deposition. The influence of these treatments on the oxidation behavior of iron was investigated in 1 atm. of oxygen at 520°C. The oxidation rates were less in all the ion beam alloyed iron samples than in untreated iron. The oxidation follows parabolic kinetics in most cases, with the rate constants, Kp, in the range (3-8)×10−6 mg2cm−4 sec−l versus 2.2×10−5 mg2 cm−4 sec−1 for untreated iron. Yttrium fluences between 5×1014 and 5×lO15 cm−2 did not alter the microstructures of iron significantly. However, fluences of 1×1016, 3×1016, 5x1016 and 1x1017 cm−2 caused the crystalline structure of iron to be replaced by an amorphous phase. The presence of this phase was demonstrated with selected area channeling patterns and transmission electron microscopy.

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

Hollow Graphitic Carbon Nanospheres Synthesized by Rapid Pyrolytic Carbonization

2021 ◽  
Vol 68 ◽  
pp. 1-16
Author(s):  
Cheng Zhang ◽  
Qing Shan Gao ◽  
Lu Yun Jiao ◽  
Laura Bogen ◽  
Nicole Forte ◽  
...  
Keyword(s):  
Rapid Heating ◽  
Conductivity Measurement ◽  
Graphitic Carbon ◽  
Bet Surface Area ◽  
Slow Heating ◽  
X Ray Diffraction ◽  
Carbon Nanospheres ◽  
X Ray ◽  
Carbonization Process ◽  
Transmission Electron

Hollow graphitic porous carbon nanosphere (CNS) materials are synthesized from polymerization of resorcinol (R) and formaldehyde (F) in the presence of templating iron polymeric complex (IPC), followed by carbonization treatment. The effect of rapid heating in the carbonization process is investigated for the formation of hollow graphitic carbon nanospheres. The resulting CNS from rapid heating was characterized for its structure and properties by transmission electron microscope (TEM), x-ray diffraction (XRD), Raman spectroscopy, bulk conductivity measurement and Brunauer-Emmett-Teller (BET) surface area. Hollow graphitic CNS with reduced degree of agglomeration is observed under rapid heating during the carbonization process when compared to the CNS synthesized using the standard slow heating approach. Key words: carbon nanosphere (CNS), rapid pyrolytic carbonization, agglomeration

Crystalline to Amorphous Transformation of Fe3B By 1 MeV Electron Irradiation

1981 ◽  
Vol 7 ◽  
Author(s):  
A. Mogro-Campero ◽  
E.L. Hall ◽  
J.L. Walter ◽  
A.J. Ratkowski
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Electron Irradiation ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Rapid Quenching ◽  
Al Alloy ◽  
Bright Field ◽  
Transmission Electron ◽  
Diffraction Patterns

ABSTRACTSpecimens of amorphous Fe75B25 produced by rapid quenching from the melt were annealed to complete crystallization and subjected to 1 MeV electron irradiation in a transmission electron microscope at room temperature and at 130 K. The irradiation was interrupted at various intervals in order to obtain bright field images and diffraction patterns. The Fe3B crystals did not become amorphous at room temperature, even after damage levels of several dpa, whereas at 130 K the crystalline to amorphous transformation was observed to be complete at damage levels below 1 dpa. The results are combined with those of ion irradiation work on Fe3B; qualitative agreement is found between Fe3B and previous work on the Zr3Al alloy concerning their response to displacement damage by electron and ion irradiation.

High-energy (MeV) ion-beam mixing of Ti with SiC and Si3N4

1987 ◽  
Vol 2 (2) ◽  
pp. 211-215 ◽  
Author(s):  
R. S. Bhattacharya ◽  
A. K. Rai ◽  
P. P. Pronko
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Enthalpy Of Mixing ◽  
High Energy ◽  
Rutherford Backscattering ◽  
Ion Beam Mixing ◽  
Metal Insulator ◽  
Transmission Electron

Ion-beam mixing of Ti layers with sintered α-SiC and hot-pressed Si3N4 was measured for 1 McV Au+ at doses of 1X1016 cm−2 and 5X1016 cm−2. Rutherford backscattering (RBS) and cross-section transmission electron microscopy (XTEM) were used to evaluate the mixing. Mixing was observed in Ti/SiC system; however, there was no mixing in Ti/Si3N4 system. Results are discussed in light of the enthalpy of mixing criterion for metal-insulator systems.

Electrical Resistance of Single-Wall Carbon Nanotubes with Determined Chiral Indices

2009 ◽  
Vol 1204 ◽  
Author(s):  
Letian Lin ◽  
Lu-Chang Qin ◽  
Sean Washburn ◽  
Scott Paulson
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Electrical Resistance ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon ◽  
Transmission Electron ◽  
Highly Sensitive

AbstractThe properties of a carbon nanotube (CNT), in particular a single-wall carbon nanotube (SWNT), are highly sensitive to the atomic structure of the nanotube described by its chirality (chiral indices). We have grown isolated SWNTs on a silicon substrate using chemical vapor deposition (CVD) and patterned sub-micron probes using electron beam lithography. The SWNT was exposed by etching the underlying substrate for transmission electron microscope (TEM) imaging and diffraction studies. For each individual SWNT, its electrical resistance was measured by the four-probe method at room temperature and the chiral indices of the same SWNT were determined by nano-beam electron diffraction. The contact resistances were reduced by annealing to typically 3-5 kΩ. We have measured the I-V curve and determined the chiral indices of each nanotube individually from four SWNTs selected randomly – two are metallic and two are semiconducting. We will present the electrical resistances in correlation with the carbon nanotube diameter as well as the band gap calculated from the determined chiral indices for the semiconducting carbon nanotubes. These experimental results are also discussed in connection with theoretical estimations.

Fabrication of Nanotwinned Surface on a Nickel Alloy Using a Developed Diamond Panel with Tips Array

2016 ◽  
Vol 874 ◽  
pp. 3-8
Author(s):  
Bo Wang ◽  
Zhen Yu Zhang ◽  
Neng Dong Duan ◽  
Ji Lei Lyu ◽  
Guo Xin Chen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Nickel Alloy ◽  
Vapor Deposition ◽  
Material Removal ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Chemical Reagents ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
High Temperature High Pressure

In this study, nanotwinned surface is fabricated on a Nickel alloy by means of a developed diamond panel with tips array. The diamond panel has an area of 10×10 mm2, and is grown using microwave chemical vapor deposition. The diamond tips are submicron in radius and formed on a silicon substrate with an array full of uniformed inverted pyramid pits. The nanotwinned surface is produced under the pressure of 1 MPa exerted by the diamond panel with tips array. Nanotwins are confirmed using transmission electron microscopy. The nanotwinned surface is generated by indention of diamond panel at room temperature using mechanical force, neither material removal nor chemical reagents. This is different from previous reports, in which high temperature, high pressure, chemical reagents or vacuum conditions are employed usually.

Temperature Dependence of Cluster-cluster Coalescence in Monodispersed Co Cluster Assemblies

2001 ◽  
Vol 676 ◽  
Author(s):  
D. L. Peng ◽  
T. Hihara ◽  
K. Sumiyama
Keyword(s):  
Electrical Conductivity ◽  
Conductivity Measurement ◽  
Interfacial Area ◽  
Ex Situ ◽  
Electrical Conductivity Measurement ◽  
Gas Condensation ◽  
Transmission Electron ◽  
Connected Cluster ◽  
Original Size ◽  
Cluster Cores

ABSTRACTUsing a plasma-gas-condensation-type cluster beam deposition system, we deposited monodispersed Co clusters with mean diameter d = 8.5 nm on quartz and microgrid substrates. The cluster-cluster coalescence process of the Co cluster assemblies was investigated by in situ electrical conductivity measurements and ex situ transmission electron microscopy (TEM). The change of magnetic properties induced by the inter-cluster coalescence was also discussed. The electrical conductivity measurement indicated that, at temperatures T < 100°C, the Co clusters in the assemblies maintain their original size as deposited at room temperature, while the inter-cluster coalescence takes place at T > 100°C. The TEM observation showed that the size distribution and the interface morphology of the clusters do not change markedly at substrate temperatures Ts ≤ 200°C, while cluster-cluster coalescence starts at Ts > 200°C. Above Ts = 300°C, the interfacial area of coalesced clusters is crystalline, having its own orientation different from those of two connected cluster cores.

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