Growth and Characterization of Ferroelectric Pb(Zr,Ti)OM3 Thin Films by Mocvd Using A 6 Inch Single Wafer Cvd System

1993 ◽  
Vol 310 ◽  
Author(s):  
Masaru Shimizu ◽  
Masashi Fujimoto ◽  
Takuma Katayama ◽  
Tadashi Shiosaki ◽  
Kenichi Nakaya ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Process ◽  
Perovskite Phase ◽  
Large Area ◽  
Entire Area ◽  
System A ◽  
Pzt Films ◽  
Step Growth ◽  
Si Wafer

AbstractFerroelectric Pb(Zr,Ti)O3(PZT) films with a perovskite phase were successfully grown by MOCVD using a 6 inch wafer CVD system. A two step growth process was proposed to obtain perovskite PZT films at high gas supplying ratios of [Zr]/([Zr]+[Ti]). The electrical properties of the PZT films obtained were measured. Large area growths of PZT films were carried out and the uniform films could be grown on the entire area of a 6 inch Si wafer. It was also found that the step coverage characteristic of the films grown by MOCVD was good.

Large Area PbZr1−xTixO3 (PZT) Thin Films Deposited by MOCVD Processes

1997 ◽  
Vol 493 ◽  
Author(s):  
Tingkai Li ◽  
Elliot Hartford ◽  
Pete Zawadzki ◽  
Richard A. Stall
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Process Conditions ◽  
Large Area ◽  
Homogeneous Microstructure ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Pt Electrodes ◽  
Pzt Films ◽  
Ray Patterns

ABSTRACTAn advanced oxide MOCVD tool and processes have been developed to deposit large area PbZr1−xTixO3 (PZT) thin films on 6” Si and Pt/Ti/SiO2/Si substrates. The experimental results show the advanced oxide MOCVD tool can achieve the growth of PZT thin films with thickness uniformity of 2% and composition uniformity better that 3% on both 6” Si and Pt/Ti/SiO,/Si wafers at high deposition rates. X-ray patterns showed a single PZT perovskite phase, and AFM showed homogeneous microstructure and low surface roughness. Typically, 300 nm thick PZT films with a grain size about 0.3 μm have Pr greater than 20 - 30 μC/cm2 at 5V, a dielectric constant around 1000, low coercive field (Ec 50 - 70 kV/cm), and fatigue rate (the normalized polarization is about 0.6 after 1010 cycles at 5 V), and leakage current of 2 - 6×lO−7 A/cm2 at 150 kV/cm and room temperature on Pt electrodes. In addition, the effects of reactor design and process conditions on the thickness and composition uniformity, as well as the m i ero structure and properties were also investigated.

High-mobility InSb thin films on GaAs (001) substrate grown by the two-step growth process

2004 ◽  
Vol 267 (1-2) ◽  
pp. 17-21 ◽  
Author(s):  
M.C. Debnath ◽  
T. Zhang ◽  
C. Roberts ◽  
L.F. Cohen ◽  
R.A. Stradling
Keyword(s):  
Thin Films ◽  
Growth Process ◽  
High Mobility ◽  
Insb Thin Films ◽  
Step Growth

Influence of Platinum Bottom Electrodes on the Piezoelectric Performance of PZT Thin Films Hot Sputtered in a High Volume Production Tool

2012 ◽  
Vol 1397 ◽  
Author(s):  
Dirk Kaden ◽  
Hans-Joachim Quenzer ◽  
Martin Kratzer ◽  
Lorenzo Castaldi ◽  
Bernhard Wagner ◽  
...  
Keyword(s):  
Thin Films ◽  
Volume Fraction ◽  
Perovskite Phase ◽  
Annealing Treatment ◽  
High Volume ◽  
Deposition Process ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
High Volume Production ◽  
Volume Production

ABSTRACTIn this work high quality ferroelectric PZT films have been prepared in-situ by hot RF magnetron sputtering. 200 mm wafer were coated with PZT films of 1 μm and 2 μm thickness at sputter rates of 45 nm/min in a high volume production sputtering tool. The films were grown on oxidized Si substrates prepared either with sputtered Ti/TiO2/Pt, sputtered Ti/TiO2/Pt/TiO2 or evaporated Ti/Pt bottom electrodes at substrate holder temperatures in the range from 550 °C to 700 °C. At these temperatures, the material nucleates in the requisite piezoelectric perovskite phase without need of an additional post annealing treatment.The films were investigated with respect to their chemical composition and their crystallographic, piezoelectric and dielectric properties. At an intermediate chuck temperature of 600 °C the PZT thin films were characterized by a minimum volume fraction of secondary nonpiezoelectric phases. A Zr/(Zr+Ti) ratio of 0.53 has been achieved matching the morphotropic phase boundary. By improving the deposition process and poling procedure, a notable high e31,f coefficient of -17.3 C/m2 has been obtained. The corresponding longitudinal piezoelectric constant was determined to have an effective longitudinal piezoelectric coefficient d33,f of 160 pm/V.

Synthesis and Characterization of Nanostructured Co(OH)2 and Co3O4 Thin Films by a Simple Solution Growth Process

2013 ◽  
Vol 537 ◽  
pp. 247-251
Author(s):  
Yu Xin Liu ◽  
Qun Yan Li ◽  
Zuo Ren Nie ◽  
Qi Wei
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Growth Process ◽  
Simple Solution ◽  
Solution Growth ◽  
Hydrolysis Reaction ◽  
Synthesis And Characterization ◽  
Solution Ph ◽  
Hydroxide Solution

Nanostructured Co(OH)2thin films were synthesized by a simple solution growth process. In experiment, F–and NH3were used as Co2+ordination agents, and hydroxyl ions were supplied by ammonia hydroxide solution for the hydrolysis reaction. The results showed that the solution pH and F/Co ratio had great influences on the morphologies of the thin films. The Co(OH)2thin films were constructed with lots of Co(OH)2nanoflakes. Nanostructured Co3O4 thin films were prepared by annealing the Co(OH)2thin films at 400°C for 2 h. The magnetic properties of Co3O4thin films were also investigated.

Surface Characterization Of Chromium Oxide Thin Films in Dependence on CVD Growth Process Parameters

2019 ◽  
Vol 2 (7) ◽  
pp. 229-236 ◽  
Author(s):  
Kostadinka A. Gesheva ◽  
Tatyana Ivanova ◽  
Anna Maria Szekeres ◽  
Oleg Trofimov
Keyword(s):  
Thin Films ◽  
Chromium Oxide ◽  
Process Parameters ◽  
Surface Characterization ◽  
Growth Process ◽  
Oxide Thin Films ◽  
Cvd Growth

Mbe Growth and Characterization of GaAs thin Films on SiGe Buffer Layers

1988 ◽  
Vol 116 ◽  
Author(s):  
S.M. Prokes ◽  
W.F. Tseng ◽  
B.R. Wilkins ◽  
H. Dietrich ◽  
A. Christou
Keyword(s):  
Electron Microscopy ◽  
Growth Process ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Defect Production ◽  
Cross Sectional ◽  
Mbe Growth ◽  
Step Growth ◽  
Scanning Electron

AbstractEpitaxial SiGe buffers have been formed by the implantation of 74Ge+ ions into Si(100)4° to <011> substrates. The implants were made at 150keV to a dose of 1×1017 /cm2 . The epitaxial layers were characterized by Rutherford backscattering, Raman spectroscopy, and electroreflectance and were found to be 300Å thick having on average a composition of Si0 . 35 Ge0.65. GaAs layers were then grown on these substrates by molecular beam epitaxy, using the standard two-step growth process. The results from Auger, Scanning Electron Microscopy, and Cross-sectional TEM indicate a lower defect production and propagation in these samples, compared to those grown directly on Si.

Effect of Pb Content on the Transformation of Sputtered PbxZr0.4Ti0.6O3 Thin Film

1993 ◽  
Vol 321 ◽  
Author(s):  
Jae-Hyun Joo ◽  
Deok-Sin Kill ◽  
Seung-Ki Joo
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Transition Temperature ◽  
Temperature Region ◽  
Transformation Temperature ◽  
Perovskite Phase ◽  
Effective Medium Approximation ◽  
Transformation Kinetics ◽  
Pzt Films

ABSTRACTPZT (PbxZr0.4Ti0.6O3) thin films were prepared by reactive co-sputtering and annealed by RTA (Rapid Thermal Annealing). Transformation kinetics and effect of Pb content on the transformation were intensively studied using EMA (Effective Medium Approximation). It has been found that depending on Pb content as well as RTA temperature, the crystal structure of PZT films changed greatly. It turned out that the transformation temperature for the perovskite phase can be lowered and the width of transition temperature region was reduced by increasing Pb content in the films. Dependence of transformation path on the Pb content has been studied.

Step Coverage of Pb(ZrTi)O3 Thin Films Grown by Mocvd

1996 ◽  
Vol 433 ◽  
Author(s):  
M. Shimizu ◽  
S. Hyodo ◽  
H. Fujisawa ◽  
H. Niu ◽  
T. Shiosaki
Keyword(s):  
Thin Films ◽  
Aspect Ratio ◽  
Growth Temperature ◽  
Perovskite Phase ◽  
Reaction Pressure ◽  
Step Coverage ◽  
Pzt Films

AbstractStep coverage of PZT grown by MOCVD was influenced by the growth temperature, the reaction pressure and the aspect ratio of the trench. PZT films grown on Si steps at growth temperatures ranging from 500 to 600°C and at reaction pressures ranging from 3 to 10Torr showed a step coverage of 52 to 86%. The step coverage of PZT grown at 600°C and at 5Torr – conditions which were suitable for the growth of perovskite phase – was 75%. The step coverage of Pt on Si and on SiO2 was 20% and 25%, respectively.

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