Growth of Strain-Free GaAs on Si/Sapphire

1993 ◽  
Vol 308 ◽  
Author(s):  
Hyunchul Sohn ◽  
E.R. Weber ◽  
Jay Tu ◽  
J.S. Smith
Keyword(s):  
Molecular Beam Epitaxy ◽  
Residual Strain ◽  
Molecular Beam ◽  
Thermal Strain ◽  
Misfit Strain ◽  
Gaas Layer ◽  
Buffer Layers ◽  
Sapphire Substrates ◽  
Gaas On Si ◽  
Gaas Films

ABSTRACTGaAs epitaxial layers were successfully grown on Si/Sapphire substrates using Molecular Beam Epitaxy(MBE). Residual compressive strain was found in GaAs films on Si/Sapphire. By Photoluminescence, the magnitude of residual strain in GaAs on Si/Sapphire was estimated to be 5×10-4 which is about one order smaller than that of GaAs on Si.As an effort to achieve further reduction in the residual strain, Indium- doped GaAs films were used as buffer layers in order to compensate compressive thermal strain by tensile misfit strain in the GaAs layer. Using this method, strain- free GaAs layers could be grown with thickness up to 0.4 μm on Si/Sapphire.

Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular Beam Epitaxy Using NH3

1998 ◽  
Vol 512 ◽  
Author(s):  
N. Grandjean ◽  
M. Leroux ◽  
J. Massies ◽  
M. Mesrine ◽  
P. Lorenzini
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Buffer Layers ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Piezoelectric Field ◽  
Secondary Ion

ABSTRACTAmmonia as nitrogen precursor has been used to grow III-V nitrides by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The efficiency of NH3 has been evaluated allowing the determination of the actual V/III flux ratio used during the GaN growth. The effects of the V/III ratio variation on the GaN layer properties have been investigated by photoluminescence (PL), Hall measurements, atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS). It is found that a high V/III ratio leads to the best material quality. Optimized GaN thick buffer layers have been used to grow GaN/AlGaN quantum well (QW) heterostructures. Their PL spectra exhibit well resolved emission peaks for QW thicknesses varying from 3 to 15 monolayers. From the variation of the QW energies as a function of well width, a piezoelectric field of 450 kV/cm is deduced.

Determination of in-depth thermal strain distribution in Molecular Beam Epitaxy GaAs on Si

1991 ◽  
Vol 53 (3) ◽  
pp. 260-264 ◽  
Author(s):  
Y. Gonz�lez ◽  
A. Mazuelas ◽  
M. Recio ◽  
L. Gonz�lez ◽  
G. Armelles ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Strain Distribution ◽  
Molecular Beam ◽  
Thermal Strain ◽  
Gaas On Si

Growth of quaternary AlInGaN/GaN Heterostructures by Plasma Induced Molecular Beam Epitaxy with high In Concentration

2000 ◽  
Vol 639 ◽  
Author(s):  
A. P. Lima ◽  
C. R. Miskys ◽  
L. Görgens ◽  
O. Ambacher ◽  
A. Wenzel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Quaternary Alloy ◽  
Buffer Layers ◽  
Lattice Match ◽  
X Ray ◽  
Lattice Constants ◽  
Sapphire Substrates ◽  
N Fluxes

ABSTRACTGrowth of AlInGaN/GaN heterostructures on sapphire substrates was achieved by plasma induced molecular beam epitaxy. Different alloy compositions were obtained by varying the growth temperature with constant Al, In, Ga and N fluxes. The In content in the alloy, measured by Rutherford Backscattering Spectroscopy, increased from 0.4% to 14.5% when the substrate temperature was decreased from 775 to 665°C. X-Ray reciprocal space maps of asymmetric AlInGaN (2.05) reflexes were used to measure the lattice constants and to verify the lattice match between the quaternary alloy and the GaN buffer layers.

Gas source molecular beam epitaxy of wurtzite GaN on sapphire substrates using GaN buffer layers

1997 ◽  
Vol 71 (2) ◽  
pp. 240-242 ◽  
Author(s):  
N. Grandjean ◽  
M. Leroux ◽  
M. Laügt ◽  
J. Massies
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Sapphire Substrates ◽  
Gas Source

scholarly journals Особенности структурных и оптических свойств InGaN-слоев, полученных методом МПЭ ПА с импульсной подачей потоков металлов

2021 ◽  
Vol 55 (9) ◽  
pp. 766
Author(s):  
Б.А. Андреев ◽  
Д.Н. Лобанов ◽  
Л.В. Красильникова ◽  
К.Е. Кудрявцев ◽  
А.В. Новиков ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Electron Concentration ◽  
Molecular Beam ◽  
Stimulated Emission ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
Sapphire Substrates ◽  
Plasma Activation

This paper presents the results of studying the properties of InGaN layers with a high InN content (80-90%) obtained by molecular beam epitaxy with plasma activation of nitrogen on sapphire substrates with AlN / GaN buffer layers. The InGaN layers were formed using the metal modulated epitaxy (MME) method, as well as in nitrogen and metal rich conditions. It was found that the use of the MME method leads to a decrease in the density of threading dislocations in the InGaN layers. Nevertheless, despite the higher dislocation density, the smallest threshold of stimulated emission of ~ 20 kW / cm2 at 77 K was obtained for the In0.8Ga0.2N layer grown under nitrogen rich conditions, which is associated with the lowest background electron concentration in this sample (1.6•1019 cm-3).

Tem Investigations of CdTe/GaAs(001) Interfaces

1993 ◽  
Vol 319 ◽  
Author(s):  
J.E. Angelo ◽  
W.W. Gerberich ◽  
G. Bratina ◽  
L. Sorba ◽  
A. Franciosi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Defect Structure ◽  
Molecular Beam ◽  
Misfit Strain ◽  
Growth Direction ◽  
Film Structure ◽  
Buffer Layers ◽  
Ex Situ ◽  
Cross Sectional ◽  
Transmission Electron

AbstractIn this study, cross-sectional transmission electron microscopy (XTEM) was used to investigate the defect structure at the interface between CdTe(001) and GaAs(001) as well as CdTe(1 11) and GaAs(001). The heterostructures were fabricated by molecular beam epitaxy on GaAs(001) buffer layers grown in-situ by molecular beam epitaxy. The defect structure at the as-deposited CdTe(001)/GaAs(001) interface consists of both dislocations and planar faults. The planar faults are both microtwins and stacking faults. It is found that annealing of the film ex-situ causes a restructuring of the CdTe near the interface, with the microtwins being completely removed upon annealing to 450°C for 100 hours. The CdTe(111)/GaAs(001) thin film structure consists of a large number of microtwins parallel to the growth direction. This twinned structure is shown to be related to the relaxation of a residual misfit strain normal to the twin direction. Possible mechanisms for the relaxation are discussed.

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

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