Gas source molecular beam epitaxy of wurtzite GaN on sapphire substrates using GaN buffer layers

1997 ◽  
Vol 71 (2) ◽  
pp. 240-242 ◽  
Author(s):  
N. Grandjean ◽  
M. Leroux ◽  
M. Laügt ◽  
J. Massies
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Sapphire Substrates ◽  
Gas Source

Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular Beam Epitaxy Using NH3

1998 ◽  
Vol 512 ◽  
Author(s):  
N. Grandjean ◽  
M. Leroux ◽  
J. Massies ◽  
M. Mesrine ◽  
P. Lorenzini
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Buffer Layers ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Piezoelectric Field ◽  
Secondary Ion

ABSTRACTAmmonia as nitrogen precursor has been used to grow III-V nitrides by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The efficiency of NH3 has been evaluated allowing the determination of the actual V/III flux ratio used during the GaN growth. The effects of the V/III ratio variation on the GaN layer properties have been investigated by photoluminescence (PL), Hall measurements, atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS). It is found that a high V/III ratio leads to the best material quality. Optimized GaN thick buffer layers have been used to grow GaN/AlGaN quantum well (QW) heterostructures. Their PL spectra exhibit well resolved emission peaks for QW thicknesses varying from 3 to 15 monolayers. From the variation of the QW energies as a function of well width, a piezoelectric field of 450 kV/cm is deduced.

Growth of Strain-Relaxed Si1-yCyFilms with Compositionally Graded Buffer Layers by Gas Source Molecular Beam Epitaxy

2007 ◽  
Vol 46 (4A) ◽  
pp. 1600-1603 ◽  
Author(s):  
Hanae Ishihara ◽  
Masahiko Murano ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Gas Source

Si and Mg Doped Gan Layers Grown by Gas Source Molecular Beam Epitaxy Using Ammonia

1997 ◽  
Vol 482 ◽  
Author(s):  
N. Grandjean ◽  
J. Massies ◽  
M. Leroux
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Light Emitting ◽  
X Ray ◽  
Sapphire Substrates ◽  
Gas Source ◽  
P Type ◽  
Mg Doped

AbstractThe growth of GaN layers was carried out on c-plane sapphire substrates by molecular beam epitaxy (MBE) using NH3. Undoped GaN layers were grown at 830°C with growth rates larger than 1 μm/h. Optical properties are characteristics of high quality GaN material and the linewidth of x-ray diffraction (0002) rocking curve is less than 350 arcsec. N- and p-type doping were achieved by using solid sources of Si and Mg. No post-growth annealing was needed to activate the Mg acceptors. As-grown GaN:Mg layers exhibit hole concentrations of 3×1017 cm−3and mobilities of 8 cm2/Vs at 300 K. Light emitting diodes (LEDs) based on GaN p-n homojunction have been processed. The turn on voltage is 3 V and the forward voltage is 3.7 V at 20 mA. The 300 K electroluminescence (EL) peaks at 390 nm.

Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire

2000 ◽  
Vol 639 ◽  
Author(s):  
S. Nikishin ◽  
G. Kipshidze ◽  
V. Kuryatkov ◽  
A. Zubrilov ◽  
K. Choi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Concentration ◽  
Molecular Beam ◽  
Background Concentrations ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Gas Source ◽  
Peak Emission ◽  
Thick Layers ◽  
Growth Experiments

ABSTRACTWe report the results of epitaxial growth experiments on AlxGa1−xN (0≤ x ≤ 1) on Si(111) and sapphire substrates aimed at understanding the origin and elimination of cracking. We describe growth procedures resulting in thick layers of AlxGa1−xN, grown by gas source molecular beam epitaxy with ammonia, that are free of cracks. In GaN layers with the thickness of ∼2.5 µm, we find the background electron concentration of (1-2)×1016 cm−3 and mobility of (800±100) cm2/Vs. In AlxGa1−xN (0.2 < x < 0.6) with the film thickness of 0.5-0.7 µm the electron concentration of (2-3)×1016 cm−3 is obtained. Low background concentrations in GaN allow for formation of p-n junctions by doping with Mg. Light emitting diodes with the peak emission at 380 nm have been demonstrated.

Growth of quaternary AlInGaN/GaN Heterostructures by Plasma Induced Molecular Beam Epitaxy with high In Concentration

2000 ◽  
Vol 639 ◽  
Author(s):  
A. P. Lima ◽  
C. R. Miskys ◽  
L. Görgens ◽  
O. Ambacher ◽  
A. Wenzel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Quaternary Alloy ◽  
Buffer Layers ◽  
Lattice Match ◽  
X Ray ◽  
Lattice Constants ◽  
Sapphire Substrates ◽  
N Fluxes

ABSTRACTGrowth of AlInGaN/GaN heterostructures on sapphire substrates was achieved by plasma induced molecular beam epitaxy. Different alloy compositions were obtained by varying the growth temperature with constant Al, In, Ga and N fluxes. The In content in the alloy, measured by Rutherford Backscattering Spectroscopy, increased from 0.4% to 14.5% when the substrate temperature was decreased from 775 to 665°C. X-Ray reciprocal space maps of asymmetric AlInGaN (2.05) reflexes were used to measure the lattice constants and to verify the lattice match between the quaternary alloy and the GaN buffer layers.

Growth of Strain-Free GaAs on Si/Sapphire

1993 ◽  
Vol 308 ◽  
Author(s):  
Hyunchul Sohn ◽  
E.R. Weber ◽  
Jay Tu ◽  
J.S. Smith
Keyword(s):  
Molecular Beam Epitaxy ◽  
Residual Strain ◽  
Molecular Beam ◽  
Thermal Strain ◽  
Misfit Strain ◽  
Gaas Layer ◽  
Buffer Layers ◽  
Sapphire Substrates ◽  
Gaas On Si ◽  
Gaas Films

ABSTRACTGaAs epitaxial layers were successfully grown on Si/Sapphire substrates using Molecular Beam Epitaxy(MBE). Residual compressive strain was found in GaAs films on Si/Sapphire. By Photoluminescence, the magnitude of residual strain in GaAs on Si/Sapphire was estimated to be 5×10-4 which is about one order smaller than that of GaAs on Si.As an effort to achieve further reduction in the residual strain, Indium- doped GaAs films were used as buffer layers in order to compensate compressive thermal strain by tensile misfit strain in the GaAs layer. Using this method, strain- free GaAs layers could be grown with thickness up to 0.4 μm on Si/Sapphire.

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