Determination of in-depth thermal strain distribution in Molecular Beam Epitaxy GaAs on Si

1991 ◽  
Vol 53 (3) ◽  
pp. 260-264 ◽  
Author(s):  
Y. Gonz�lez ◽  
A. Mazuelas ◽  
M. Recio ◽  
L. Gonz�lez ◽  
G. Armelles ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Strain Distribution ◽  
Molecular Beam ◽  
Thermal Strain ◽  
Gaas On Si

Growth of Strain-Free GaAs on Si/Sapphire

1993 ◽  
Vol 308 ◽  
Author(s):  
Hyunchul Sohn ◽  
E.R. Weber ◽  
Jay Tu ◽  
J.S. Smith
Keyword(s):  
Molecular Beam Epitaxy ◽  
Residual Strain ◽  
Molecular Beam ◽  
Thermal Strain ◽  
Misfit Strain ◽  
Gaas Layer ◽  
Buffer Layers ◽  
Sapphire Substrates ◽  
Gaas On Si ◽  
Gaas Films

ABSTRACTGaAs epitaxial layers were successfully grown on Si/Sapphire substrates using Molecular Beam Epitaxy(MBE). Residual compressive strain was found in GaAs films on Si/Sapphire. By Photoluminescence, the magnitude of residual strain in GaAs on Si/Sapphire was estimated to be 5×10-4 which is about one order smaller than that of GaAs on Si.As an effort to achieve further reduction in the residual strain, Indium- doped GaAs films were used as buffer layers in order to compensate compressive thermal strain by tensile misfit strain in the GaAs layer. Using this method, strain- free GaAs layers could be grown with thickness up to 0.4 μm on Si/Sapphire.

Molecular Beam Epitaxy of Controlled Single Domain GaAs on Si (100)

1986 ◽  
Vol 25 (Part 2, No. 4) ◽  
pp. L285-L287 ◽  
Author(s):  
Mitsuo Kawabe ◽  
Toshio Ueda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Domain ◽  
Gaas On Si

Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy

2002 ◽  
Vol 81 (15) ◽  
pp. 2863-2865 ◽  
Author(s):  
S. Martini ◽  
A. A. Quivy ◽  
E. C. F. da Silva ◽  
J. R. Leite
Keyword(s):  
Molecular Beam Epitaxy ◽  
Real Time ◽  
Molecular Beam ◽  
Time Determination

Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular Beam Epitaxy Using NH3

1998 ◽  
Vol 512 ◽  
Author(s):  
N. Grandjean ◽  
M. Leroux ◽  
J. Massies ◽  
M. Mesrine ◽  
P. Lorenzini
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Buffer Layers ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Piezoelectric Field ◽  
Secondary Ion

ABSTRACTAmmonia as nitrogen precursor has been used to grow III-V nitrides by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The efficiency of NH3 has been evaluated allowing the determination of the actual V/III flux ratio used during the GaN growth. The effects of the V/III ratio variation on the GaN layer properties have been investigated by photoluminescence (PL), Hall measurements, atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS). It is found that a high V/III ratio leads to the best material quality. Optimized GaN thick buffer layers have been used to grow GaN/AlGaN quantum well (QW) heterostructures. Their PL spectra exhibit well resolved emission peaks for QW thicknesses varying from 3 to 15 monolayers. From the variation of the QW energies as a function of well width, a piezoelectric field of 450 kV/cm is deduced.

Determination of the dispersion of the index of refraction and the elastic moduli for molecular-beam-epitaxy-grown Zn1−xBexSe alloys

2001 ◽  
Vol 79 (4) ◽  
pp. 473-475 ◽  
Author(s):  
F. C. Peiris ◽  
U. Bindley ◽  
J. K. Furdyna ◽  
Hyunjung Kim ◽  
A. K. Ramdas ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Elastic Moduli ◽  
Molecular Beam ◽  
Index Of Refraction
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