Threading Dislocation Densities in GaAs Grown on Reduced Area Si Substrates

1993 ◽  
Vol 308 ◽  
Author(s):  
J. Knall ◽  
L.T. Romano ◽  
D.K. Biegelsen ◽  
R.D. Bringans
Keyword(s):  
Side Wall ◽  
Heat Treatments ◽  
Threading Dislocation ◽  
Large Area ◽  
Plan View ◽  
Si Substrates ◽  
Gaas On Si ◽  
Dislocation Densities ◽  
Side Walls ◽  
Wall Growth

ABSTRACTWe have studied the possibilities of reducing the threading dislocation (TD) density in GaAs on Si using free side wall growth on patterned Si substrates and/or using a soft ZnSe interlayer in combination with post growth annealing procedures. TD densities were accurately determined using large area plan view TEM and were found to be unaffected by proximity to free side walls and by the ZnSe interlayer. Post growth heat treatments led to a factor of ∼2 reduction in TD density and to bunching of dislocations throughout the thickness of the film.

Strain-Free GexSi1−x Layers with Low Threading Dislocation Densities Grown on Si Substrates

1991 ◽  
Vol 220 ◽  
Author(s):  
E. A. Fitzgerald ◽  
Y. H. Xie ◽  
M. L. Green ◽  
D. Brasen ◽  
A. R. Kortan ◽  
...  
Keyword(s):  
Threading Dislocation ◽  
Plan View ◽  
Light Emitting ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Electron Beam Induced Current ◽  
Current Densities ◽  
Dimensional Electron Gas ◽  
Compositional Grading

ABSTRACTWe have grown linearly compositionally graded GexSi1−x structures at high temperatures (700–900°C) on Si substrates to form a surface which resembles a GexSi1−x substrate. We have obtained completely relaxed structures with x≤0.50 and threading dislocation densities in the 105cm−2 - 106cm−2 range. Because of the very low threading dislocation densities, the structures appear dislocation free in conventional transmission electron microscopy (TEM) cross-section and plan view. Employing the electron beam induced current technique (EBIC), we were able to consistently measure these low threading dislocation densities. A direct comparison of two x=0.35 films, one graded in Ge content and one uniform in Ge content, shows that compositional grading decreases the dislocation density by a factor of 100–1000. These. higher quality graded buffers have been used as templates for the subsequent growth of InGaP light emitting diodes (LED) and GexSi1−x/Si two-dimensional electron gas (2DEG) structures. Room temperature operation of orange-red LEDs were obtained at current densities of =600A/cm, and mobilities as high as 96,000 cm2/V-s were achieved at 4.2K in the 2DEG structures.

Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates

1991 ◽  
Vol 59 (7) ◽  
pp. 811-813 ◽  
Author(s):  
E. A. Fitzgerald ◽  
Y.‐H. Xie ◽  
M. L. Green ◽  
D. Brasen ◽  
A. R. Kortan ◽  
...  
Keyword(s):  
Threading Dislocation ◽  
Si Substrates ◽  
Dislocation Densities

LOW-Temperature Epitaxial Growth of GaAs on Si Substrates by MBE

1992 ◽  
Vol 263 ◽  
Author(s):  
Ting-Yen Chiang ◽  
En-Huery Liu ◽  
Der-Hwa Yiin ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Defect Density ◽  
Solution Treatment ◽  
Plan View ◽  
Si Substrates ◽  
Gaas On Si ◽  
Transmission Electron

ABSTRACTThis paper presents results of the low—temperature epitaxial growth of GaAs on Si substrates with orientation 1°—4° off (100) by molecular beam epitaxy (MBE). The epitaxial growth ·is carried out on Si wafers subjected to HF solution treatment by “spin-etch” technique before the wafer is transferred to the entry chamber of MBE system. Methods used for reducing defect density in the epitaxial layers are proposed. The characterization techniques include cross-sectional transmission electron microscopy (XTEM), plan-view transmission electron microscopy, scanning electron microscopy (S EM), and double crystal X-ray diffraction (DCXRD). Epitaxial films with a full width at half—maximum (FWHM) of about 310 arcsec measured by DCXRD are obtained without annealing.-

Strategies For Direct Monolithic Integration of AlxGa(1−x)As/InxGa(1−x)As LEDS and Lasers On Ge/GeSi/Si Substrates Via Relaxed Graded GexSi(1−x) Buffer Layers

2001 ◽  
Vol 692 ◽  
Author(s):  
Michael E. Groenert ◽  
Christopher W. Leitz ◽  
Arthur J. Pitera ◽  
Vicky K. Yang ◽  
Harry Lee ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Threshold Current ◽  
Buffer Layers ◽  
Threading Dislocation ◽  
Carrier Lifetimes ◽  
Si Substrates ◽  
Dislocation Densities ◽  
Minority Carrier Lifetimes ◽  
Current Densities ◽  
High Series

AbstractAlxGa(1−x)As/GaAs quantum well lasers have been demonstrated via organometallic chemical vapor deposition (OMCVD) on relaxed graded GexSi(1−x) virtual substrates on Si. Despite unoptimized laser structures with high series resistance and large threshold current densities, surface threading dislocation densities as low as 2×106 cm−2 enabled cw room-temperature lasing at a wavelength of 858nm. The laser structures are oxide-stripe gain-guided devices with differential quantum efficiencies of 0.16 and threshold current densities of 1550A/cm2. Identical devices grown on commercial GaAs substrates showed differential quantum efficiencies of 0.14 and threshold current densities of 1700A/cm2. This comparative data agrees with our previous measurements of near-bulk minority carrier lifetimes in GaAs grown on Ge/GeSi/Si substrates. A number of GaAs/Ge/Si integration issues including thermal expansion mismatch and Ge autodoping behavior in GaAs were overcome.

The Relaxation of InxGa1-xAs/GaAs Strained Multilayers

1989 ◽  
Vol 160 ◽  
Author(s):  
David C. Paine ◽  
David J. Howard ◽  
Dawei Luo ◽  
Robert N. Sacks ◽  
Timothy C. Eschrich
Keyword(s):  
Strain Energy ◽  
Critical Thickness ◽  
Film Growth ◽  
Strain Relaxation ◽  
Dislocation Nucleation ◽  
Large Area ◽  
Plan View ◽  
Dislocation Densities ◽  
Strained Films ◽  
Kinetics Of

AbstractIn this paper we report on the kinetics of strain relaxation in GaAs/InxGa1-xAs/GaAs/AlAs (0.05<x<0.22) layers grown by MBE on GaAs at 520°C. We have characterized the density of dislocations present due to strain relaxation during both film growth and processing by using a large area thinning technique which enables the observation of approximately 2 mm2 areas by plan-view TEM. The thickness of the InxGa1-xAs layers studied was 36.4 nm and four compositions were chosen so that the critical thickness predicted by strain energy considerations was exceeded. Due, however, to sluggish dislocation nucleation and glide kinetics at the deposition temperature, the as-grown misfit dislocation densities were well below the predicted level for fully relaxed films. We have studied the rate at which these metastable strained films relax as a function of post-growth annealing time and temperature.

MBE Growth of GaAs on Si (100)

1987 ◽  
Vol 91 ◽  
Author(s):  
J. S. Ahearn ◽  
P. Uppal
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Mbe Growth ◽  
Si Substrates ◽  
Gaas On Si ◽  
Linear Defects ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Dislocation Annihilation

ABSTRACTMolecular beam epitaxy (MBE) growth of GaAs on Si was investigated for three Si substrate orientations: exact (100), 4° off (100) towards (011), and 4° off towards (010). Cross-sectional transmission electron microscopy (X-TEM) analysis indicated a high dislocation density at the GaAs-Si interface that decreased away from the interface. Changing the orientation significantly affected the dislocation arrangement in the films.In the exact (100) case, dislocations from different glide systems formed pyramids, and dislocation annihilation resulted in linear defects propagating to the bottom of pits on the GaAs surface. On Si substrates oriented 4° off of (100), dislocation pyramids were not observed which we attribute to the different stresses acting on different glide systems. Planar TEM sections indicated that the dislocation densities at th surfaces of the 2-μm-thick films were 8 × 108 /cm2 for exact (100), 3.4 × 108/cm2 for 4° off (100) towards (010), and 1.6 × 108/cm2 for 4° off towards (011) orientations. When etching was used to evaluate anti-phase domain (APD) density, the exact (100) and off (100) orientations toward (010) showed APD's in some areas; off (100) toward (011) orientations were apparently APD-free. Results of photoluminescence (PL) spectroscopy of each of the wafers showed marked differences in peak intensities for the different orientations. Secondary ion mass spectrometry (SIMS) showed that roughly 1/4 of a monolayer of Si was incorporated in the GaAs, mostly concentrated in the first 250 nm near the GaAs-Si interface.

Reduction of Defect Density in Heteroepitaxial GexSi1-x Grown on Patterned Si Substrates

1989 ◽  
Vol 160 ◽  
Author(s):  
E.A. Fitzgerald ◽  
Y.-H. Xie ◽  
J. Michel ◽  
P.E. Freeland ◽  
B.E. Weir
Keyword(s):  
Defect Density ◽  
Threading Dislocation ◽  
Patterned Substrate ◽  
Si Substrates ◽  
Molecular Beam Epitaxial ◽  
Etch Pit ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Electron Beam Induced Current ◽  
Molecular Beam Epitaxial Growth

AbstractWe have investigated the molecular beam epitaxial growth of GexSi1-x on small growth areas patterned in Si substrates. Electron beam induced current, etch-pit density measurements, transmission electron microscopy, and photoluminescence were used to compare dislocation densities in GexSi1-x on patterned and unpattemed substrates. We find a dramatic reduction in both misfit and threading dislocation densities for the patterned substrate growth. Our results also show that dislocation introduction is dominated by heterogeneous nucleation.

Optimization of SiGe Graded Buffer Defectivity and Throughput by Means of High Growth Temperature and Pre-Threaded Substrates

2005 ◽  
Vol 891 ◽  
Author(s):  
Matthew Erdtmann ◽  
Matthew T. Currie ◽  
Joseph C. Woicik ◽  
David Black
Keyword(s):  
Growth Temperature ◽  
High Growth ◽  
Dislocation Nucleation ◽  
Threading Dislocation ◽  
Threading Dislocations ◽  
Trade Off ◽  
Dislocation Glide ◽  
Si Substrates ◽  
High Growth Temperature ◽  
Dislocation Densities

ABSTRACTDislocation glide kinetics dictate in relaxed graded buffers a fundamental opposition between the defectivity and throughput. For state-of-the-art Si-based applications, the trade-off between defect level and wafer cost (inversely related to throughput) has made the insertion of SiGe graded buffers into production difficult. We aim to mitigate the trade-off by reporting two advances that enable simultaneous improvements in both defectivity and throughput. The first is use of a high growth temperature to allow very fast dislocation glide velocities and growth rates as high as 1.0 μm/min. The second is the use of “pre-threaded” Si substrates, substrates with an elevated density of threading dislocations. By having dislocation nucleation controlled by uniformly distributed substrate threading dislocations, instead of unpredictable heterogeneous sources, impediments to dislocation glide, such as dislocation bundles and pile-ups, are reduced. By incorporating both advances into SiGe graded buffer epitaxy, dislocation pile-up densities are reduced by nearly three orders of magnitude, threading dislocation densities are reduced by a factor of 7.4×, and wafer throughput is increased at least 33%.

Threading Dislocation Density Reduction in GaAs on Si Substrates

1988 ◽  
Vol 27 (Part 2, No. 12) ◽  
pp. L2271-L2273 ◽  
Author(s):  
Takashi Nishioka ◽  
Yoshio Itoh ◽  
Mitsuru Sugo ◽  
Akio Yamamoto ◽  
Masfumi Yamaguchi
Keyword(s):  
Dislocation Density ◽  
Threading Dislocation ◽  
Si Substrates ◽  
Gaas On Si ◽  
Density Reduction ◽  
Threading Dislocation Density

Threading Dislocation Densities in Mismatched Heteroepitaxial (001) Semiconductors

1990 ◽  
Vol 209 ◽  
Author(s):  
J. E. Ayers ◽  
S.K. Ghandhi ◽  
L. J. Schowalter
Keyword(s):  
Dislocation Density ◽  
Film Thickness ◽  
Thickness Dependence ◽  
Threading Dislocation ◽  
Gaas On Si ◽  
Dislocation Densities ◽  
Threading Dislocation Density ◽  
Heteroepitaxial Layers ◽  
Equilibrium Strain ◽  
Good Agreement

ABSTRACTIn this paper we propose a theory which accounts for the thickness dependence of threading dislocation densities in mismatched heteroepitaxial (001) semiconductors. This theory predicts that, for thick, planar, highly-mismatched heteroepitaxial layers with equilibrium strain, the threading dislocation density should be proportional to f/h, where f is thelattice mismatch and h is the film thickness. These predictions are in good agreement with experimental resultsin the GaAs on Si(001) system.

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