Modeling of the Blister Test to Express Adhesive Strength in Terms of Measurable Quantities

1993 ◽  
Vol 308 ◽  
Author(s):  
Jim Sizemore ◽  
David A. Stevenson ◽  
John Stringer
Keyword(s):  
Adhesive Strength ◽  
Chemical Vapor ◽  
Absolute Measurement ◽  
Quantitative Information ◽  
Blister Test ◽  
Shape Models ◽  
Crack Extension Force ◽  
Chemical Vapor Deposited ◽  
Experimental Parameters ◽  
Extension Force

ABSTRACTThe adhesion of chemical vapor deposited (CVD) diamond thin films to substrates is a major limitation to using this new and exciting material. It is important to have a quantitative and absolute measurement of adhesive strength to understand and identify remedies. There are many methods to measure adhesion, but most rely on comparison to a standard instead of being an absolute measurement. The blister test is potentially able to measure adhesion both quantitatively and absolutely, but the existing analysis is not sufficient. This paper presents a fracture mechanics approach to analyze the blister test for a circular plate in order to obtain the appropriate quantitative information, i.e., the crack extension force, G. Several shape models exist. We consider several models to predict the behavior of this plate and then derive an equation that expresses G in terms of the critical pressure and critical volume at which de-bonding occurs. As a result of this analysis, we identify the key experimental parameters and show that this equation is insensitive to the model used.

Measuring Interfacial Fracture Toughness With The Blister Test

1996 ◽  
Vol 436 ◽  
Author(s):  
R. J. Hohlfelder ◽  
H. Luo ◽  
J. J. Vlassak ◽  
C. E. D Chidsey ◽  
W. D. Nix
Keyword(s):  
Interface Crack ◽  
Crack Extension ◽  
Test System ◽  
Interfacial Fracture Toughness ◽  
Adhesion Promoter ◽  
Critical Crack ◽  
Blister Test ◽  
Crack Extension Force ◽  
Extension Force ◽  
Film Substrate

AbstractThe adhesion of thin films to substrates can be quantified using the blister test, which measures the crack extension force (G) required to propagate a crack along the film/substrate interface. We summarize the derivation of crack extension force for the blister test, and discuss how blister tests can be conducted by measuring only the pressure and volume of liquid injected into the test system. We describe a way to calculate the velocity of the interface crack front.Data from blister tests of acrylate films (14 μm thick) on nitride substrates are analyzed. The critical crack extension forces (GC) measured were 25 − 34 J/m2 for samples which had a commercial adhesion promoter at the interface, and 0.5 − 2.0 J/m2 without the adhesion promoter. GC was observed to increase with the velocity of the interface crack, and the dependence appears to obey a power-law.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

scholarly journals Grain boundaries in chemical-vapor-deposited atomically thin hexagonal boron nitride

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Xibiao Ren ◽  
Jichen Dong ◽  
Peng Yang ◽  
Jidong Li ◽  
Guangyuan Lu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Grain Boundaries ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited
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