Effects of Film Thickness and Annealing Temperature on the Stress in Amorphous Gd-Fe Alloy Thin Films

1993 ◽  
Vol 308 ◽  
Author(s):  
Zhi-feng Zhou ◽  
Yu-dian Fan
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Annealing Temperature ◽  
Amorphous Structure ◽  
Growth Stress ◽  
Interfacial Stress ◽  
Inhomogeneous Distribution ◽  
Structure Model ◽  
Glass Substrates ◽  
Film Substrate

ABSTRACTGd-Fe films were deposited by magnetron sputtering on glass substrates. The results shoved that the stress is compressive in most cases, and a larger compressive stress exists at the film-substrate interface. The stress is independent on the film thickness when the film thickness is greater than 0.20 μm. The stress becomes tensile only when the annealing temperature attains 400ºC. Therefore, the interfacial stress and the growth stress coexist in the Gd-Fe films, and the former will not be dominant when the film thickness is greater than 0. 2μm. The interfacial stress may originate from the inhomogeneous distribution of film composition at the interface, and the origin of growth stress can be explained by the atomic peening effect. The relation between the stress and the annealing temperature can be comprehended with the amorphous structure model.

scholarly journals Emergence and Evolution of Crystallization in TiO2 Thin Films: A Structural and Morphological Study

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1409
Author(s):  
Ofelia Durante ◽  
Cinzia Di Giorgio ◽  
Veronica Granata ◽  
Joshua Neilson ◽  
Rosalba Fittipaldi ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Transition Metal Oxides ◽  
Annealing Temperature ◽  
Morphological Properties ◽  
Degree Of Crystallinity ◽  
Tio2 Thin Films ◽  
Force Microscopy ◽  
Heat Treated ◽  
Complementary Techniques

Among all transition metal oxides, titanium dioxide (TiO2) is one of the most intensively investigated materials due to its large range of applications, both in the amorphous and crystalline forms. We have produced amorphous TiO2 thin films by means of room temperature ion-plasma assisted e-beam deposition, and we have heat-treated the samples to study the onset of crystallization. Herein, we have detailed the earliest stage and the evolution of crystallization, as a function of both the annealing temperature, in the range 250–1000 °C, and the TiO2 thickness, varying between 5 and 200 nm. We have explored the structural and morphological properties of the as grown and heat-treated samples with Atomic Force Microscopy, Scanning Electron Microscopy, X-ray Diffractometry, and Raman spectroscopy. We have observed an increasing crystallization onset temperature as the film thickness is reduced, as well as remarkable differences in the crystallization evolution, depending on the film thickness. Moreover, we have shown a strong cross-talking among the complementary techniques used displaying that also surface imaging can provide distinctive information on material crystallization. Finally, we have also explored the phonon lifetime as a function of the TiO2 thickness and annealing temperature, both ultimately affecting the degree of crystallinity.

Dependence of Film Thickness on Properties of Al Doped ZnO Thin Films

2011 ◽  
Vol 194-196 ◽  
pp. 2305-2311
Author(s):  
Ying Ge Yang ◽  
Dong Mei Zeng ◽  
Hai Zhou ◽  
Wen Ran Feng ◽  
Shan Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Electrical Parameter ◽  
Substrate Surface ◽  
Rf Magnetron Sputtering ◽  
Thickness Effect ◽  
Visible Range ◽  
Glass Substrates ◽  
Doped Zno

In this study high quality of Al doped ZnO (ZAO) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature in order to study the thickness effect upon their structure, electrical and optical properties. XRD results show that the films are polycrystalline and with strongly preferred (002) orientation perpendicular to substrate surface whatever the thickness is. The crystallite size was calculated by Williamson-Hall method, while it increases as the film thickness increased. The lattice stress is mainly caused by the growth process. Hall measurements revealed electrical parameter very dependent upon thickness when the thickness of ZAO film is lower than 700 nm. The resistivity decreased and the carrier concentration and Hall mobility increases as the film thickness increased. When film thickness becomes larger, only a little change in the above properties was observed. All the films have high transmittance above 90% in visible range. Red shift of the absorption edge was observed as thickness increased. The optical energy bandgap decreased from 3.41eV to 3.30 eV with the increase of film thickness.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

scholarly journals A Study on the Characteristics of Cu–Mn–Dy Alloy Resistive Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 118 ◽  
Author(s):  
Ho-Yun Lee ◽  
Chi-Wei He ◽  
Ying-Chieh Lee ◽  
Da-Chuan Wu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Annealing Temperature ◽  
Phase Evolution ◽  
Amorphous Structure ◽  
X Ray Diffraction ◽  
Temperature Coefficient Of Resistance ◽  
X Ray ◽  
Transmission Electronmicroscopy ◽  
Scanning Electron

Cu–Mn–Dy resistive thin films were prepared on glass and Al2O3 substrates, which wasachieved by co-sputtering the Cu–Mn alloy and dysprosium targets. The effects of the addition ofdysprosium on the electrical properties and microstructures of annealed Cu–Mn alloy films wereinvestigated. The composition, microstructural and phase evolution of Cu–Mn–Dy films werecharacterized using field emission scanning electron microscopy, transmission electronmicroscopy and X-ray diffraction. All Cu–Mn–Dy films showed an amorphous structure when theannealing temperature was set at 300 °C. After the annealing temperature was increased to 350 °C,the MnO and Cu phases had a significant presence in the Cu–Mn films. However, no MnO phaseswere observed in Cu–Mn–Dy films at 350 °C. Even Cu–Mn–Dy films annealed at 450 °C showedno MnO phases. This is because Dy addition can suppress MnO formation. Cu–Mn alloy filmswith 40% dysprosium addition that were annealed at 300 °C exhibited a higher resistivity of ∼2100 μΩ·cm with a temperature coefficient of resistance of –85 ppm/°C.

High Remanent Polarization in Laser Ablated SrBi2Nb2O9Thin Films

2003 ◽  
Vol 780 ◽  
Author(s):  
Rasmi R. Das ◽  
P. Bhattacharya ◽  
W. Pérez ◽  
Ram S. Katiyarxya
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Dielectric Breakdown ◽  
Breakdown Strength ◽  
Suitable Material ◽  
Average Grain Size ◽  
Degree Of Orientation

AbstractPulsed-laser-deposition technique was used to grow SrBi2Nb2O9(SBN) thin films on platinized silicon substrates. The effect of annealing temperature and film thicknesses on the structural and electrical properties has been studied. The average grain size and rms surface roughness was found to increase with increasing annealing temperature. The degree of orientation along the (200) direction was increased with the film thicknesses. The remanent polarization was found to be increased with the film thicknesses and was attributed to the selftexturing characteristics of SBN films. Thin films with higher thickness (∼570 nm) exhibited high value of remanent polarization (∼38 ν/cm2) with coercive field of 185 kV/cm. There was a reduction of coercive field with the film thickness. The dielectric constant was observed to be independent of the film thickness. The increase in loss tangent with increasing film thicknesses was attributed to the reduction of dielectric breakdown strength of the films. The SBN thin films showed minimal fatigue characteristics and suitable material for memory devices.

scholarly journals Enhanced Ionic Conduction at the Film/Substrate Interface in LiI Thin Films Grown on Sapphire(0001)

1993 ◽  
Vol 318 ◽  
Author(s):  
D. Lubben ◽  
F. A. Modine
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Ionic Conduction ◽  
High Vacuum ◽  
Dislocation Motion ◽  
Ultra High Vacuum ◽  
Vacuum System ◽  
Substrate Interface ◽  
Interdigital Electrodes ◽  
Film Substrate

ABSTRACTThe ionic conductivity of LiI thin films grown on sapphire(0001) substrates has been studied in situ during deposition as a function of film thickness and deposition conditions. LiI films were produced at room temperature by sublimation in an ultra-high-vacuum system. The conductivity of the Lil parallel to the film/substrate interface was determined from frequency-dependent impedance measurements as a function of film thickness using Au interdigital electrodes deposited on the sapphire surface. The measurements show a conduction of ∼5 times the bulk value at the interface which gradually decreases as the film thickness is increased beyond 100 nm. This interfacial enhancement is not stable but anneals out with a characteristic log of time dependence. Fully annealed films have an activation energy for conduction (σT) of ∼0.47 ± .03 eV, consistent with bulk measurements. The observed annealing behavior can be fit with a model based on dislocation motion which implies that the increase in conduction near the interface is not due to the formation of a space-charge layer as previously reported but to defects generated during the growth process. This explanation is consistent with the behavior exhibited by CaF2 films grown under similar conditions.

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