Characterization of a Silicon Nitride Mask Membrane Process

1993 ◽  
Vol 306 ◽  
Author(s):  
G.M. Wells ◽  
M. Reilly ◽  
R. Nachman ◽  
F. Cerrina ◽  
M. A. El Khakani ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Content ◽  
Gas Flow ◽  
Visible Region ◽  
Elastic Recoil ◽  
Absorption Bands ◽  
Elastic Recoil Detection ◽  
Silicon Nitride Membrane ◽  
Bow Technique ◽  
Different Temperatures

AbstractA silicon nitride membrane growth process has been characterized. The films were grown by LPCVD on 100 mm diameter silicon substrates using ammonia and dichlorosilane as reactant gases. The films were grown using a range of gas ratios at three different temperatures. The film composition was determined by elastic recoil detection. The silicon-nitrogen absorption bands were characterized by FTIR spectroscopy. The photon transmission of the films was measured in the visible region from 350 – 850 nm, and in the x-ray region for photon energies from 1000 to 3000 eV. The film stresses were determined using the wafer bow technique. An increase in the silicon content of the films was observed for increased dichlorosilane gas flow and for increasing growth temperatures. The increased silicon content of the films is correlated to a decrease in the tensile stress and a decrease in the optical transmission of the films.

Characterization of the Plasma Chemistry and Film Composition of PECVD Silicon Nitride Deposited from Silane-Nitrogen and Silane-Ammonia Mixtures with Argon Additions

1989 ◽  
Vol 165 ◽  
Author(s):  
W. E. Quinn ◽  
B. G. Bagley ◽  
B. J. Wilkens ◽  
B. M. Gallois
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Content ◽  
Gas Flow ◽  
Plasma Chemistry ◽  
Optical Emission ◽  
Adsorbed Hydrogen ◽  
Infrared Transmission ◽  
Absorption Bands ◽  
Film Composition ◽  
Hydrogen Molecules

AbstractSilicon nitride films deposited from silane-nitrogen and silane-ammonia mixtures by PECVD contain large amounts of hydrogen. We have determined that adding argon to the gas mixture reduces the amount of hydrogen in the resulting films. Differences in film composition are obviously due to changes in the chemistry of the discharge which was characterized by line-of-sight mass spectrometry, optical emission spectroscopy and plasma double probe measurements. Substrate temperature was fixed at 325°C, pressure was 500 mtorr, the RF power was 0.25 watts cm−2, the silane to nitrogen ratio was varied from 0.003 to 0.02, the silane to ammonia ratio was varied from 0.01 to 0.5, and the argon additions were 10% of the total gas flow. Argon additions to the discharge increased the plasma density in both nitrogen and ammonia plasmas. Optical emission from N2 and Si-H species increased upon the addition of 10% argon to the silane-nitrogen discharge, whereas the N-H emission decreased upon addition of argon to the silane-ammonia discharge. Infrared transmission spectra of films deposited with and without argon show no change in peak position or intensity of Si-H and N-H absorption bands in the spectral range studied, despite a large (over 20%) reduction in hydrogen content, as determined by nuclear profiling, upon the addition of argon. These results suggest that a substantial fraction of the hydrogen in the films is not infrared active. We propose that the reduction in hydrogen content is due to bombardment of the growing film by argon ions, which sputter the adsorbed hydrogen molecules.

Silicon Nitride from Microwave Plasma: Fabrication and Characterization

1986 ◽  
Vol 68 ◽  
Author(s):  
Yves Tessier ◽  
J. E. Klemberg-Sapieha ◽  
S. Poulin-Dandurand ◽  
M. R. Wertheimer
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Etch Rate ◽  
Microwave Plasma ◽  
Audio Frequency ◽  
Elastic Recoil ◽  
Deposition Rates ◽  
Elastic Recoil Detection ◽  
Fabrication And Characterization ◽  
Substrate Temperatures

AbstractPlasma silicon nitride (P-SiN) films were prepared from SiH4/NH3 mixtures in a large volume microwave plasma (LMP) apparatus, at substrate temperatures T2 ranging from ambient to 250°C.Under otherwise nominally identical fabrication conditions, deposition rates were 10 to 25 times greater than those reported by others for radio- or audio-frequency plasmas.Based on film compositions, determined by elastic recoil detection (ERD), and measurements of such properties as density, refractive index, etch rate in dilute HF, and moisture permeation coefficient, our best P-SiN films (produced at T2 ≥ 200°C) are very similar to those reported in the literature.

Silicon nitride from microwave plasma: fabrication and characterization

1987 ◽  
Vol 65 (8) ◽  
pp. 859-863 ◽  
Author(s):  
Yves Tessier ◽  
J. E. Klemberg-Sapieha ◽  
S. Poulin-Dandurand ◽  
M. R. Wertheimer ◽  
S. Gujrathi
Keyword(s):  
Silicon Nitride ◽  
Etch Rate ◽  
Microwave Plasma ◽  
Ternary Mixtures ◽  
Audio Frequency ◽  
Elastic Recoil ◽  
Deposition Rates ◽  
Elastic Recoil Detection ◽  
Fabrication And Characterization ◽  
Substrate Temperatures

Plasma silicon nitride (P-SiN) films were prepared from SiH4–NH3 mixtures and from ternary mixtures with Ar or N2 in a large-volume microwave plasma apparatus, at substrate temperatures Ts ranging from ambient to 250 °C. Under otherwise nominally identical fabrication conditions, deposition rates were 10 to 25 times greater than those reported by others for radio-or audio-frequency plasmas. Based on film compositions determined by elastic recoil detection, and measurements of such properties as density, refractive index, etch rate in dilute HF, and the moisture permeation coefficient, our best P-SiN films (produced at Ts ≥ 200 °C) were very similar to those reported in the literature.

High-rate (> 1nm/s) and low-temperature (< 400°C) deposition of silicon nitride using an N2/SiH4 and NH3/SiH4 expanding thermal plasma

2003 ◽  
Vol 762 ◽  
Author(s):  
J. Hong ◽  
W.M.M. Kessels ◽  
M.C.M. van de Sanden
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Thermal Plasma ◽  
Dark Conductivity ◽  
High Rate ◽  
Elastic Recoil ◽  
Film Properties ◽  
Elastic Recoil Detection ◽  
Force Microscopy ◽  
Atomic Force

AbstractHigh-rate (> 1 nm/s) and low-temperature (50– 400°C) deposition of silicon nitride (a-SiNx:H) films has been investigated by the expanding thermal plasma (ETP) technique using SiH4 as Si-containing and N2 or NH3 as N-containing precursor gases. The structural, optical and electrical properties of the a-SiNx:H films have been studied by elastic recoil detection, spectroscopic ellipsometry, infrared spectroscopy, dark conductivity measurements and atomic force microscopy. The film properties of the ETP deposited a-SiNx:H films in this low-temperature range are discussed in terms of deposition rate, atomic composition, UV-VIS optical and IR vibrational properties, conductivity, and surface topography of the films.

Performance and Reliability of a MEMS-based tunable optical filter operating in the 1565 nm-1525 nm wavelength range

2002 ◽  
Vol 722 ◽  
Author(s):  
T. S. Sriram ◽  
B. Strauss ◽  
S. Pappas ◽  
A. Baliga ◽  
A. Jean ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Line Width ◽  
Insertion Loss ◽  
Optical Filter ◽  
Single Mode ◽  
Single Mode Fiber ◽  
Reliability Testing ◽  
Silicon Nitride Membrane ◽  
Tunable Optical Filter ◽  
Extensive Performance

AbstractThis paper describes the results of extensive performance and reliability characterization of a silicon-based surface micro-machined tunable optical filter. The device comprises a high-finesse Fabry-Perot etalon with one flat and one curved dielectric mirror. The curved mirror is mounted on an electrostatically actuated silicon nitride membrane tethered to the substrate using silicon nitride posts. A voltage applied to the membrane allows the device to be tuned by adjusting the length of the cavity. The device is coupled optically to an input and an output single mode fiber inside a hermetic package. Extensive performance characterization (over operating temperature range) was performed on the packaged device. Parameters characterized included tuning characteristics, insertion loss, filter line-width and side mode suppression ratio. Reliability testing was performed by subjecting the MEMS structure to a very large number of actuations at an elevated temperature both inside the package and on a test board. The MEMS structure was found to be extremely robust, running trillions of actuations without failures. Package level reliability testing conforming to Telcordia standards indicated that key device parameters including insertion loss, filter line-width and tuning characteristics did not change measurably over the duration of the test.

Yttrium Oxyhydrides for Photochromic Applications: Correlating Composition and Optical Response

2018 ◽  
Author(s):  
Dmitrii Moldarev ◽  
Elbruz M. Baba ◽  
Marcos V. Moro ◽  
Chang C. You ◽  
Smagul Zh. Karazhanov ◽  
...  
Keyword(s):  
Medical Devices ◽  
Ternary Diagram ◽  
Optical And Electrical Properties ◽  
Ambient Conditions ◽  
Elastic Recoil ◽  
Elastic Recoil Detection Analysis ◽  
Photochromic Properties ◽  
Smart Windows ◽  
Elastic Recoil Detection ◽  
Detection Analysis

It has been recently demonstrated that yttrium oxyhydride(YHO) films can exhibit reversible photochromic properties when exposed to illumination at ambient conditions. This switchable optical propertyenables their utilization in many technological applications, such as smart windows, sensors, goggles, medical devices, etc. However, how the composition of the films affects their optical properties is not fully clear and therefore demands a straightforward investigation. In this work, the composition of YHO films manufactured by reactive magnetron sputtering under different conditions is deduced in a ternary diagram from Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA). The results suggest that stable compounds are formed with a specificchemical formula – YH<sub>2-δ</sub>O<sub>δ</sub>. In addition, optical and electrical properties of the films are investigated, and a correlation with their compositions is established. The corresponding photochromic response is found in a specific oxygen concentration range (0.45 < δ < 1.5) with maximum and minimum of magnitude on the lower and higher border, respectively.

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