Substrate Doping and Orientation Effects on Dielectric Growth on Siucon in a Nitrous Oxide Environment

1993 ◽  
Vol 303 ◽  
Author(s):  
H.B. Harrison ◽  
S. Dimitrijev ◽  
D. Sweatman ◽  
A. Misiura ◽  
G.K. Reeves
Keyword(s):  
Growth Rate ◽  
Nitrous Oxide ◽  
Doping Concentration ◽  
Single Crystal Silicon ◽  
Crossover Point ◽  
Crystal Silicon ◽  
Dielectric Interface ◽  
Orientation Effects ◽  
Heavily Doped ◽  
Substrate Doping

ABSTRACTIn this paper both the substrate doping concentration and single crystal silicon orientation are considered when dielectrics are grown on silicon in a nitrous oxide environment. Our initial preliminary findings show that for heavily doped subtrates thicker layers of dielectric result compared to their lower doped counterparts. Furthermore we find a crossover point of temperature for growth rate for <111> compared to <100>. We believe that the different growth rates are attributable to nitrogen build up at the dielectric interface.

Single Crystal Silicon Carbide On Silicon Using A Supersonic Gas Jet Of Methylsilane

1997 ◽  
Vol 483 ◽  
Author(s):  
S. A. Ustin ◽  
C. Long ◽  
L. Lauhon ◽  
W. Ho
Keyword(s):  
Growth Rate ◽  
Growth Rates ◽  
Single Crystal Silicon ◽  
Maximum Growth ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Supersonic Molecular Beam ◽  
Transmission Electron

AbstractCubic SiC films have been grown on Si(001) and Si(111) substrates at temperatures between 600 °C and 900 °C with a single supersonic molecular beam source. Methylsilane (H3SiCH3) was used as the sole precursor with hydrogen and nitrogen as seeding gases. Optical reflectance was used to monitor in situ growth rate and macroscopic roughness. The growth rate of SiC was found to depend strongly on substrate orientation, methylsilane kinetic energy, and growth temperature. Growth rates were 1.5 to 2 times greater on Si(111) than on Si(001). The maximum growth rates achieved were 0.63 μm/hr on Si(111) and 0.375μm/hr on Si(001). Transmission electron diffraction (TED) and x-ray diffraction (XRD) were used for structural characterization. In-plane azimuthal (ø-) scans show that films on Si(001) have the correct 4-fold symmetry and that films on Si(111) have a 6-fold symmetry. The 6-fold symmetry indicates that stacking has occurred in two different sequences and double positioning boundaries have been formed. The minimum rocking curve width for SiC on Si(001) and Si(111) is 1.2°. Fourier Transform Infrared (FTIR) absorption was performed to discern the chemical bonding. Cross Sectional Transmission Electron Microscopy (XTEM) was used to image the SiC/Si interface.

Infrared Light Source Made of Heavily Doped Single Crystal Silicon Microbridge

1997 ◽  
Vol 117 (5) ◽  
pp. 275-279
Author(s):  
Hiroyasu Yuasa ◽  
Seishiro Ohya ◽  
Kenji Akimoto ◽  
Shiro Karasawa ◽  
Setsuo Kodato
Keyword(s):  
Single Crystal ◽  
Light Source ◽  
Single Crystal Silicon ◽  
Infrared Light ◽  
Crystal Silicon ◽  
Heavily Doped

Agglomeration-Free Nanoscale Cobalt Silicide Film Formation Via Substrate Preamorphization

1993 ◽  
Vol 309 ◽  
Author(s):  
S. Pramanick ◽  
B.K. Patnaik ◽  
G. A. Rozgonyi
Keyword(s):  
Grain Size ◽  
Film Formation ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Concurrent Processing ◽  
Process Modification ◽  
Boron Doped ◽  
Heavily Doped ◽  
Stability Issues

AbstractWe have used preamorphization of silicon substrates as a process modification to suppress agglomeration during cobalt disilicide film formation. Planar, continuous and low resistivity (<21 μΩ-cm) silicide films less than 35 nm thick have been produced both on single crystal silicon and polysilicon. Nanoscale(<35 nm) silicide films are more susceptible to islanding phenomena since agglomeration is dependent onthe ratio of grain size to film thickness. Preamorphization prior to silicidation favorsa large increase in silicide nucleation rate, as well as reduction in critical nuclei size, both of which aid the formation of silicide with small grains. The resulting small grain silicides enable nanoscale films to remain below the critical grain size to thickness ratio for which thin films become morphologically unstable. An interphase void band which occurs between CoSi and CoSi2 layers, acts as a convenient diffusion marker and aids interpretation of the complex stability issues. Preamorphization prior to silicidation was also extended to heavily doped substrates to study the applicability of this approach for junctions and gate contacts. Silicidation of amorphized heavily boron doped substrates produces non uniform layers due to the collision of the advancing silicidation and SPE interfaces. A comparision of concurrent processing, i.e. simulatneous dopant activation and silicide formation, with conventional silicidation of Si+ preamorphized heavily doped(B) substrates is also presented.

scholarly journals Thermoelectric thermal detectors based on ultra-thin heavily doped single-crystal silicon membranes

2017 ◽  
Vol 110 (26) ◽  
pp. 262101 ◽  
Author(s):  
Aapo Varpula ◽  
Andrey V. Timofeev ◽  
Andrey Shchepetov ◽  
Kestutis Grigoras ◽  
Juha Hassel ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Thermal Detectors ◽  
Heavily Doped ◽  
Silicon Membranes

scholarly journals Влияние уровня легирования исходных монокристаллов кремния на параметры структуры пористого кремния, полученного методом электрохимического травления

2019 ◽  
Vol 45 (21) ◽  
pp. 3
Author(s):  
А.Г. Зегря ◽  
В.В. Соколов ◽  
Г.Г. Зегря ◽  
Ю.В. Ганин ◽  
Ю.М. Михайлов
Keyword(s):  
Structural Parameters ◽  
Hole Concentration ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Porous Layers ◽  
Silicon Crystals ◽  
Self Organized ◽  
Cooperative Process ◽  
Heavily Doped ◽  
P Type

AbstractThe effect of comparatively small changes in the free carrier concentration in a heavily doped p ‑type single-crystal silicon on the structural parameters of porous layers formed as a result of its anodic etching has been found. The pronounced influence exerted by the hole concentration on the structural porous silicon parameters being studied is explained on the basis of the concept of electrochemical pore-formation in silicon crystals as a self-organized cooperative process accompanied by the injection of electrons from the region of the chemical reaction at the propagation front of pores.

Heavily Doped Ultra-Shallow Junctions Formed by an ArF Excimer Laser

1988 ◽  
Vol 129 ◽  
Author(s):  
S. Yoshioka ◽  
J. Wada ◽  
H. Saeki ◽  
S. Matsumoto
Keyword(s):  
Excimer Laser ◽  
High Surface ◽  
Single Crystal Silicon ◽  
Surface Concentration ◽  
Crystal Silicon ◽  
Ultrashallow Junctions ◽  
High Surface Concentration ◽  
Heavily Doped ◽  
Ultra Shallow Junctions ◽  
Argon Fluoride

ABSTRACTBoron doping of single crystal silicon using an argon fluoride excimer laser with diborane gas has been performed. Diborane gas has an absorption at 193nm, which leads to gas phase photodecomposition of the diborane. Utilizing the photolyic effect, we obtained high surface concentration and ultrashallow junctions of 5×1020 cm−3 and 0.1 µm, respectively. The photolytic effect enhances the incorporation of the dopant species.

scholarly journals Optimal Cooling System Design for Increasing the Crystal Growth Rate of Single-Crystal Silicon Ingots in the Czochralski Process Using the Crystal Growth Simulation

Processes ◽  
2020 ◽  
Vol 8 (9) ◽  
pp. 1077
Author(s):  
Hye Jun Jeon ◽  
Hyeonwook Park ◽  
Ganesh Koyyada ◽  
Salh Alhammadi ◽  
Jae Hak Jung
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Simulation Analysis ◽  
Cooling System ◽  
Single Crystal Silicon ◽  
Production Quality ◽  
Crystal Silicon ◽  
Growth Simulation ◽  
Cooling Design ◽  
Czochralski Process

Here, we report a successfully modified Czochralski process system by introducing the cooling system and subsequent examination of the results using crystal growth simulation analysis. Two types of cooling system models have been designed, i.e., long type and double type cooling design (LTCD and DTCD) and their production quality of monocrystalline silicon ingot was compared with that of the basic type cooling design (BTCD) system. The designed cooling system improved the uniformity of the temperature gradient in the crystal and resulted in the significant decrease of the thermal stress. Moreover, the silicon monocrystalline ingot growth rate has been enhanced to 18% by using BTCD system. The detailed simulation results have been discussed in the manuscript. The present research demonstrates that the proposed cooling system would stand as a promising technique to be applied in CZ-Si crystal growth with a large size/high pulling rate.

HREM observation of dislocations near room temperature fractures in silicon

1988 ◽  
Vol 46 ◽  
pp. 892-893
Author(s):  
M. H. Rhee ◽  
W. A. Coghlan
Keyword(s):  
Cross Section ◽  
Room Temperature ◽  
Single Crystal Silicon ◽  
Dislocation Nucleation ◽  
Back Side ◽  
Ion Milling ◽  
Crystal Silicon ◽  
Flat Surfaces ◽  
Induced Fractures ◽  
Vicker’S Microhardness

Silicon is believed to be an almost perfectly brittle material with cleavage occurring on {111} planes. In such a material at room temperature cleavage is expected to occur prior to any dislocation nucleation. This behavior suggests that cleavage fracture may be used to produce usable flat surfaces. Attempts to show this have failed. Such fractures produced in semiconductor silicon tend to occur on planes of variable orientation resulting in surfaces with a poor surface finish. In order to learn more about the mechanisms involved in fracture of silicon we began a HREM study of hardness indent induced fractures in thin samples of oxidized silicon.Samples of single crystal silicon were oxidized in air for 100 hours at 1000°C. Two pieces of this material were glued together and 500 μm thick cross-section samples were cut from the combined piece. The cross-section samples were indented using a Vicker's microhardness tester to produce cracks. The cracks in the samples were preserved by thinning from the back side using a combination of mechanical grinding and ion milling.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Strain measurement by means of bend contour microscopy

1989 ◽  
Vol 47 ◽  
pp. 210-211
Author(s):  
Philip D. Hren
Keyword(s):  
Strain Measurement ◽  
Large Angle ◽  
Single Crystal Silicon ◽  
Convergent Beam Electron Diffraction ◽  
Zone Axis ◽  
Silicon Membrane ◽  
Crystal Silicon ◽  
Contour Pattern ◽  
Convergent Beam ◽  
Low Symmetry

The pattern of bend contours which appear in the TEM image of a bent or curled sample indicates the shape into which the specimen is bent. Several authors have characterized the shape of their bent foils by this method, most recently I. Bolotov, as well as G. Möllenstedt and O. Rang in the early 1950’s. However, the samples they considered were viewed at orientations away from a zone axis, or at zone axes of low symmetry, so that dynamical interactions between the bend contours did not occur. Their calculations were thus based on purely geometric arguments. In this paper bend contours are used to measure deflections of a single-crystal silicon membrane at the (111) zone axis, where there are strong dynamical effects. Features in the bend contour pattern are identified and associated with a particular angle of bending of the membrane by reference to large-angle convergent-beam electron diffraction (LACBED) patterns.

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