New Perspectives in Low Noise Preamplifier Design for Room Temperature Detector Applications

1993 ◽  
Vol 302 ◽  
Author(s):  
P.F. Manfredi
Keyword(s):  
Room Temperature ◽  
Silicon Detector ◽  
Low Noise ◽  
Discrete Elements ◽  
Active Devices ◽  
Temperature Detector ◽  
Low Noise Preamplifier

ABSTRACTAfter reviewing the noise limits in room temperature preamplifiers based on discrete elements, the paper discusses some results obtained with monolithic circuits and the perspectives opened-up by active devices directly integrated on the chip of a silicon detector.

A Study of Low-Noise Preamplifier Systems for Use with Room Temperature Mercuric Iodide (Hgi2) X-Ray Detectors

1981 ◽  
Vol 28 (1) ◽  
pp. 579-582 ◽  
Author(s):  
J. S. Iwanczyk ◽  
A. J. Dabrowski ◽  
G. C. Huth ◽  
A. Del Duca ◽  
W. Schnepple
Keyword(s):  
Room Temperature ◽  
Low Noise ◽  
Mercuric Iodide ◽  
X Ray ◽  
Low Noise Preamplifier

scholarly journals Study of low noise preamplifier systems for use with room temperature mercuric iodide (HgI/sub 2/) x-ray detectors

1980 ◽  
Author(s):  
J.S. Iwanczyk ◽  
A.J. Dabrowski ◽  
G.C. Huth ◽  
A. Del Duca ◽  
W. Schenpple
Keyword(s):  
Room Temperature ◽  
Low Noise ◽  
Mercuric Iodide ◽  
X Ray ◽  
Low Noise Preamplifier

A Low Noise Silicon Detector Preamplifier System for Room Temperature X-Ray Spectroscopy

1993 ◽  
Vol 302 ◽  
Author(s):  
G. Bertuccio ◽  
A. Pullia
Keyword(s):  
High Resolution ◽  
Room Temperature ◽  
Silicon Detector ◽  
Low Noise ◽  
High Resistivity ◽  
Charge Amplifier ◽  
X Ray ◽  
High Resistivity Silicon ◽  
Ultra Low Noise ◽  
Low Capacitance

ABSTRACTThe design and performances of a system for high resolution X-ray spectroscopy are presented. The detector is a low capacitance diode built on high resistivity silicon. The signal preamplification is made by means of an ultra-low noise charge amplifier of new conception. Presently the system exhibits an equivalent noise charge of 61 r.m.s. electrons at 297 K and 32 r.m.s. electrons at 223 K. It is shown how an improvement down to 30 r.m.s. electrons at room temperature is expected employing an integrated transistor on the detector chip.

scholarly journals Room temperature Silicon detector for IR range coated with Ag2S Quantum Dots

2019 ◽  
Author(s):  
Ivan Tretyakov ◽  
Oleg Ovchinnikov ◽  
Gregory Goltsman ◽  
Sergey Svyatodukh ◽  
Anastasya Chumakova ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Silicon Detector ◽  
Ag2s Quantum Dots
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