Room temperature X-ray spectroscopy with a silicon diode detector and an ultra low noise preamplifier

1994 ◽  
Vol 41 (4) ◽  
pp. 1704-1709 ◽  
Author(s):  
G. Bertuccio ◽  
A. Pullia
1993 ◽  
Vol 302 ◽  
Author(s):  
G. Bertuccio ◽  
P. Rehak ◽  
D.M. Xi

ABSTRACTA new circuital configuration for the charge amplifier is presented. By means of a double feedback loop, the input field-effect transistor can operate with its gate junction sligtly forward biased, collecting the detector current and discharging the feedback capacitor. The feedback resistor is so avoided and no resetting device or circuit is required for the preamplifier operation. The noise is limited by the input transistor, an equivalent noise charge of 19.5 r.m.s. electrons has been measured at room temperature by employing a commercial JFET.


1981 ◽  
Vol 28 (1) ◽  
pp. 579-582 ◽  
Author(s):  
J. S. Iwanczyk ◽  
A. J. Dabrowski ◽  
G. C. Huth ◽  
A. Del Duca ◽  
W. Schnepple

2016 ◽  
Vol 62 (3) ◽  
pp. 395-400
Author(s):  
Paweł Grochulski ◽  
Mirosław Cygler ◽  
Brian Yates

After a successful 10 years of operation, the Canadian Macromolecular Crystallography Facility 08ID-1 beamline will undergo an upgrade to establish micro-beam capability. This paper is mostly focussed on optics and computer simulations for ray tracing of the beamline. After completion, the focussed beam at the sample will have a much smaller size of 50 × 5 μm2 (H x V), allowing measurement of X-ray diffraction patterns from much smaller crystals than possible presently. The beamline will be equipped with a fast sample changer and an ultra-low noise photon counting detector, allowing shutter-less operation of the beamline. Additionally, it will be possible to perform in-situ room-temperature experiments.


1980 ◽  
Author(s):  
J.S. Iwanczyk ◽  
A.J. Dabrowski ◽  
G.C. Huth ◽  
A. Del Duca ◽  
W. Schenpple

1993 ◽  
Vol 302 ◽  
Author(s):  
G. Bertuccio ◽  
A. Pullia

ABSTRACTThe design and performances of a system for high resolution X-ray spectroscopy are presented. The detector is a low capacitance diode built on high resistivity silicon. The signal preamplification is made by means of an ultra-low noise charge amplifier of new conception. Presently the system exhibits an equivalent noise charge of 61 r.m.s. electrons at 297 K and 32 r.m.s. electrons at 223 K. It is shown how an improvement down to 30 r.m.s. electrons at room temperature is expected employing an integrated transistor on the detector chip.


2003 ◽  
Vol 50 (3) ◽  
pp. 723-728 ◽  
Author(s):  
G. Bertuccio ◽  
R. Casiraghi ◽  
D. Maiocchi ◽  
A. Owens ◽  
M. Bavdaz ◽  
...  

1993 ◽  
Vol 302 ◽  
Author(s):  
P.F. Manfredi

ABSTRACTAfter reviewing the noise limits in room temperature preamplifiers based on discrete elements, the paper discusses some results obtained with monolithic circuits and the perspectives opened-up by active devices directly integrated on the chip of a silicon detector.


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