Ic Compatible Processing of Si:Er for optoelectronics

1993 ◽  
Vol 301 ◽  
Author(s):  
F. Y. G. Ren ◽  
J. Michel ◽  
Q. Sun-Paduano ◽  
B. Zheng ◽  
H. Kitagawa ◽  
...  
Keyword(s):  
High Temperature ◽  
Monolithic Integration ◽  
Equilibrium Solubility ◽  
Exciting Opportunity ◽  
Sims Analysis ◽  
Er Doped ◽  
Process Compatibility ◽  
Migration Enthalpy

ABSTRACTWe have fabricated the first Si:Er LED, operating at 300 K, based on an understanding of the Si-Er-O materials system. Er-doped Si (Si:Er) provides an exciting opportunity for the monolithic integration of Si based opto-electronics. In this paper, Er-Si reactivity, and Er diffusivity and solubility have been studied to establish Si:Er process compatibility with a silicon IC fabline. Er3 Si5 is the most stable silicid formed; and it can be oxidized into Er2O3 at high temperature under any oxidizing conditions. Among Er compounds, Er2O3 luminesces and Er3Si5 and ErN do not. The diffusivity of Er in Si is low and SIMS analysis yields a diffusivity D(Er) ∼ 10−12cm2/s at 1300 C and ∼ 10−15cm2/s at 900 C, and a migration enthalpy of δHm(Er) ∼ 4.6 eV. The equilibrium solubility of Er in Si is in the range of 1016 cm−3 at 1300 C. The Si:Er LED performance is compared with GaAs LEDs to demonstrate its feasibility.

Ic Compatible Processing of Si:Er for Optoelectronics

1993 ◽  
Vol 298 ◽  
Author(s):  
F. Y. G. Ren ◽  
J. Michel ◽  
Q. Sun-Paduano ◽  
B. Zheng ◽  
H. Kitagawa ◽  
...  
Keyword(s):  
High Temperature ◽  
Monolithic Integration ◽  
Equilibrium Solubility ◽  
Exciting Opportunity ◽  
Sims Analysis ◽  
Er Doped ◽  
Process Compatibility ◽  
Migration Enthalpy

AbstractWe have fabricated the first Si:Er LED, operating at 300 K, based on an understanding of the Si-Er-O materials system. Er-doped Si (Si:Er) provides an exciting opportunity for the monolithic integration of Si based opto-electronics. In this paper, Er-Si reactivity, and Er diffusivity and solubility have been studied to establish Si:Er process compatibility with a silicon IC fabline. Er3Si5 is the most stable silicid formed; and it can be oxidized into Er2O3 at high temperature under any oxidizing conditions. Among Er compounds, Er2O3 luminesces and Er3Si5 and ErN do not. The diffusivity of Er in Si is low and SIMS analysis yields a diffusivity D(Er) ∼ 10−12cm2/s at 1300 C and ∼ 10−15cm2/s at 900 C, and a migration enthalpy of ΔHm(Er) ∼ 4.6 eV. The equilibrium solubility of Er in Si is in the range of 1016 cm−3 at 1300 C. The Si:Er LED performance is compared with GaAs LEDs to demonstrate its feasibility.

MEMS Monolithic Integration Technology

2013 ◽  
Vol 562-565 ◽  
pp. 1387-1392
Author(s):  
Zhao Yun Zhang ◽  
Zhi Gui Shi ◽  
Zhen Chuan Yang ◽  
Bo Peng
Keyword(s):  
High Temperature ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
High Performance ◽  
Monolithic Integration ◽  
Cmos Process ◽  
Integration Technology ◽  
Integrated Technology ◽  
High Temperature Process

The monolithic integrated technology of MEMS was discussed. First discussed the advantages and difficulties faced by the MEMS monolithic integration technology. Second the features and the process of the mainstream MEMS monolithic integration technology was introduced. And finally put forward a SOI MEMS monolithic integration technology, the technology with no high-temperature process, Post-CMOS integrated solution, compatible with the CMOS process. This technology can achieve high aspect ratio, high-performance micro-inertial devices..

Thermoelectric Properties of Er-doped InGaN Alloys for High Temperature Applications

2011 ◽  
Vol 1325 ◽  
Author(s):  
K. Aryal ◽  
I. W. Feng ◽  
B. N. Pantha ◽  
J. Li ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Er Doped ◽  
Organic Chemical Vapor Deposition ◽  
Co Doped ◽  
Ingan Alloys ◽  
Temperature Applications

ABSTRACTThermoelectric (TE) properties of erbium-silicon co-doped InxGa1-xN alloys (InxGa1-xN: Er + Si, 0≤x≤0.14), grown by metal organic chemical vapor deposition, have been investigated. It was found that doping of InGaN alloys with Er atoms of concentration, N[Er] larger than 5x1019 cm-3, has substantially reduced the thermal conductivity, κ, in low In content InGaN alloys. It was observed that κ decreases as N[Er] increases in Si co-doped In0.10Ga0.90N alloys. A room temperature ZT value of ~0.05 was obtained in In0.14Ga0.86N: Er + Si, which is much higher than that obtained in un-doped InGaN with similar In content. Since low In content InGaN is stable at high temperatures, these Er+Si co-doped InGaN alloys could be promising TE materials for high temperature applications.

Monolithic Integration of High Temperature Silicon Carbide Integrated Circuits

2013 ◽  
Vol 58 (4) ◽  
pp. 375-388 ◽  
Author(s):  
M. Alexandru ◽  
V. Banu ◽  
J. Montserrat ◽  
P. Godignon ◽  
J. Millan
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Monolithic Integration

The effect of Er doping on the crystallization of Ge1−xSnx thin films

2021 ◽  
pp. 2150337
Author(s):  
Baijie Xia ◽  
Zhaoshi Dong ◽  
Chunwang Zhao
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
High Temperature ◽  
Crystallization Temperature ◽  
Thermal Evaporation ◽  
Er Doping ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Er Doped

The Er-doped [Formula: see text] thin films with different Sn contents were prepared on Ge buffered Si substrates by thermal evaporation. The effect of Er doping on the crystallization of [Formula: see text] films at different annealing temperatures was studied. It is demonstrated that Er doping can increase the critical crystallization temperature and greatly reduce the surface roughness of high temperature annealed [Formula: see text] thin films.

Formation and Luminescent Properties of Oxidized Porous Silicon Doped with Erbium by Electrochemical Procedure

1998 ◽  
Vol 536 ◽  
Author(s):  
V. Bondarenko ◽  
N. Vorozov ◽  
L. Dolgyi ◽  
V. Yakovtseva ◽  
V. Petrovich ◽  
...  
Keyword(s):  
High Temperature ◽  
Porous Silicon ◽  
Optical Waveguides ◽  
Energy Levels ◽  
Luminescent Properties ◽  
Temperature Treatment ◽  
High Temperature Treatment ◽  
Total Oxidation ◽  
Oxidized Porous Silicon ◽  
Er Doped

AbstractThe present work is concerned with Er-doped oxidized porous silicon (PS). The characteristic feature of the work is that PS doping has been realized by an electrochemical procedure followed by a high temperature treatment. 5-μm thick PS layers were formed on p-type Si of 0.3-Ohm-cm resistivity. Er incorporation was performed by a cathodic polarization of PS in a 0.1 M Er(NO3)3 aqueous solution. A high temperature treatment in an oxidizing ambient at 500-1000°C was utilized to provide either partial or total oxidation of PS:Er layers. X-ray microanalysis was used to study chemical composition of the samples. Photoluminescence (PL) and photoluminescence excitation (PLE) spectra were investigated. After the partial oxidation (in the temperature range of 600-800°C), weak Er3+-related PL at 1.53 ptm was observed. A high temperature anneal in Ar atmosphere at the temperature of 1100°C caused a significant increase in the Er3+-related PL intensity. Resonant features were observed in PLE spectra of fully oxidized PS. Five peaks at 381, 492, 523, 654 and 980 nm were revealed. The strongest excitation occurred at 381 and 523 nm. The excitation of different Er3+ energy levels, cross-relaxation interactions and emission due to the 4I13/2→4I15/2 transitions were considered. Application of the Er-doped oxidized PS for integrated optical waveguides is presented.

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