Selective area epitaxy for photonic integrated circuits and advanced devices

2005 ◽  
Author(s):  
J.J. Coleman ◽  
R.B. Swint ◽  
T.S. Yeoh ◽  
V.C. Elarde
Keyword(s):  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Selective Area Epitaxy ◽  
Selective Area

Selective Area Epitaxy for Optoelectronic Devices

1993 ◽  
Vol 300 ◽  
Author(s):  
H. Temkin ◽  
R. A. Hamm ◽  
A. Feygenson ◽  
M. A. Cotta ◽  
L. R. Harriott ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Performance ◽  
Optoelectronic Devices ◽  
Bipolar Transistors ◽  
Powerful Method ◽  
Selective Area Epitaxy ◽  
Optoelectronic Integrated Circuits ◽  
Selective Area

ABSTRACTWe discuss the characteristics of MOMBE based selective area epitaxy useful in the preparation of optoelectronic devices. Selective area epitaxy, a process in which epitaxy is restricted only to the areas opened in a suitably prepared dielectric mask, offers a powerful method of preparing high performance devices, varying the thickness and composition of the grown layers simply by controlling the width of the open areas and monolithically integrating different device types on common substrates. Lasers, heterostructure bipolar transistors, and optoelectronic integrated circuits based on InGaAs/InP system and relying on selective area epitaxy are described.

Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits

1997 ◽  
Vol 3 (3) ◽  
pp. 874-884 ◽  
Author(s):  
J.J. Coleman ◽  
R.M. Lammert ◽  
M.L. Osowski ◽  
A.M. Jones
Keyword(s):  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Selective Area

Selective Area Epitaxy of GaAs Optical Waveguides by Laser Assisted Chemical Vapor Deposition

1995 ◽  
Vol 397 ◽  
Author(s):  
J.C. Roberts ◽  
K.S. Boutros ◽  
S.M. Bedair
Keyword(s):  
Chemical Vapor Deposition ◽  
Integrated Circuits ◽  
Cross Sections ◽  
Vapor Deposition ◽  
Optical Waveguides ◽  
Chemical Vapor ◽  
Direct Writing ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Multimode Waveguides

ABSTRACTDirect writing of GaAs optical waveguides has been achieved by laser assisted chemical vapor deposition (LCVD). The multimode waveguides have gaussian-like cross sections, smooth surfaces, and exhibit losses as low as 5.4 dB/cm. The LCVD technique offers the capability of maskless in situ selective epitaxial growth of diverse multilayer structures, and is therefore a novel alternative for the monolithic integration of optoelectronic integrated circuits.

scholarly journals Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

Nanomaterials ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 11
Author(s):  
Viktor Shamakhov ◽  
Dmitriy Nikolaev ◽  
Sergey Slipchenko ◽  
Evgenii Fomin ◽  
Alexander Smirnov ◽  
...  
Keyword(s):  
Growth Rate ◽  
Integrated Circuits ◽  
Quantum Wells ◽  
Chemical Vapour ◽  
Growth Conditions ◽  
Local Change ◽  
Selective Area Epitaxy ◽  
Mocvd Growth ◽  
Selective Area ◽  
Sio2 Mask

Selective area epitaxy (SAE) is widely used in photonic integrated circuits, but there is little information on the use of this technique for the growth of heterostructures in ultra-wide windows. Samples of heterostructures with InGaAs quantum wells (QWs) on GaAs (100) substrates with a pattern of alternating stripes (100-μm-wide SiO2 mask/100-μm-wide window) were grown using metalorganic chemical vapour deposition (MOCVD). It was found that due to a local change in the growth rate of InGaAs QW in the window, the photoluminescence (PL) spectra measured from the edge to the center of the window exhibited maximum blueshifts of 14 and 19 meV at temperatures of 80 K and 300 K, respectively. Using atomic force microscopy, we have demonstrated that the surface morphologies of structures grown using standard epitaxy or SAE under identical MOCVD growth conditions correspond to a step flow growth with a step height of ~1.5 ML or a step bunching growth mode, respectively. In the structures grown with the use of SAE, a strong variation in the surface morphology in an ultra-wide window from its center to the edge was revealed, which is explained by a change in the local misorientation of the layer due to a local change in the growth rate over the width of the window.

AlGaInAs MOVPE selective area growth for photonic integrated circuits

2015 ◽  
Vol 4 (2) ◽  
Author(s):  
Jean Decobert ◽  
Guillaume Binet ◽  
Alvaro D. B. Maia ◽  
Pierre-Yves Lagrée ◽  
Christophe Kazmierski
Keyword(s):  
Integrated Circuits ◽  
Band Gap ◽  
Vapor Phase ◽  
High Speed ◽  
Photonic Integrated Circuits ◽  
Effective Diffusion ◽  
Selective Area Growth ◽  
Multiple Quantum ◽  
Selective Area ◽  
Area Growth

AbstractWe developed a generic photonic integration platform based on selective area growth (SAG) by metal organic vapor-phase epitaxy (MOVPE) of AlGaInAs/InP multiple quantum well (MQW) material. For efficient and predictive band gap engineering of photonic integrated circuits, different SAG zones of active and passive function heterostructures are precisely modeled and characterized. With the vapor-phase diffusion model, using numerical simulations of finite volumes, we extracted the three effective diffusion lengths of Al, Ga, and In species. In our growth conditions, these lengths were 32, 65, and 14 μm, respectively. The Kardar-Parisi-Zhang (KPZ) equation, a classic approach to describe the growing interface profile, is used. AlGaInAs MQW properties are then simulated in terms of thickness, composition, band gap, and biaxial strain variations. Highly resolved μ-photoluminescence and optical interferometer microscopy measurements confirm the validity of the band gap and thickness variations for both bulk and MQW layers. A new diffractometer, with a submillimeter X-ray spot, was used to study the structural properties of the MQW in the center of the SAG area. As an application, we present the realization and operation of full-monolithic high-speed advanced modulation format transmitters based on novel prefixed optical phase switching by fast electro-absorption modulators.

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