Enhancement of the Metal/Si-Doped AlGaAs Schottky Barrier Height by CH4/H2 Reactive Ion Etching

1993 ◽  
Vol 300 ◽  
Author(s):  
R. Pereira ◽  
M. Van Hove ◽  
W. De Raedt ◽  
J. Alay ◽  
H. Bender ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Photoelectron Spectroscopy ◽  
Schottky Barrier Height ◽  
Reactive Ion Etching ◽  
Electrical Measurements ◽  
Ion Etching ◽  
Si Doped ◽  
Cv Measurements

The damage introduced by CH4/H2 reactive ion etching (RIE) on Si-doped AlGaAs layers is studied by X-Ray Photoelectron Spectroscopy (XPS), Auger electron spectrocopy (AES) and electrical measurements on Schottky contacts. The XPS analysis of the surface stoichiometry after RIE exposure shows arsenic depletion and adsorbed carbon as the main characteristics. The carbon spectrum consists of a component due to atmospheric contamination and an additional photoelectron peak at 283 eV, which we correlate with the formation of Ga-C radicals at the AlGaAs surface during RIE. The reaction process at the Au/TiW/Ti/AlGaAs interface after RIE exposure and subsequent thermal annealing is monitored by AES. Also by this technique, carbon was detected at the Ti/AlGaAs interface and no interdiffusion was observed. The electrical behaviour of the contacts is characterized by capacitance-voltage (CV) and current-voltage (IV) measurements. Schottky barrier height, ideality factor and reverse breakdown were determined. The barrier height extracted from CV measurements of the samples exposed to RIE shows increased values (1.1 to 1.4 eV) compared to the reference samples (1.0 to 1.1 eV), depending on the aluminium concentration. The same behaviour was observed in the ideality factor. The results are explained by the formation of a p-n junction below the metal/AlGaAs barrier. Good agreement between experimental and theoretical values is found when the compensation of Si donors was taken into account.

Effects of Reactive Ion Etching on the Electrical Properties of n-GaN Surfaces

1995 ◽  
Vol 395 ◽  
Author(s):  
A. T. Ping ◽  
A. C. Schmitz ◽  
M. Asif Khan ◽  
I. Adesida
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Ideality Factor ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Self Bias ◽  
Current Voltage ◽  
Dry Etch

ABSTRACTDry etch damage on n-GaN has been investigated using Pd Schottky diodes fabricated on surfaces etched by conventional reactive ion etching with SiCl4 plasma. The Schottky barrier height and ideality factor were investigated as a function of the plasma self-bias voltage. Current-voltage measurements revealed severe degradation of both the forward and reverse characteristics for plasma self-bias voltages in excess of -150 V.

An Investigation of the Al/n-GaAs Diodes with High Schottky Barrier Heights

1993 ◽  
Vol 318 ◽  
Author(s):  
C-P. Chen ◽  
Y. A. Chang ◽  
T.F. Kuech
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Cross Section ◽  
Ideality Factor ◽  
Schottky Barrier Height ◽  
Dark Field ◽  
Transmission Electron Microscopy Image ◽  
Transmission Electron

ABSTRACTThermally stable Al/n-GaAs Schottky contacts, up to annealing temperature at 500 °C for 20 seconds, have been realized by sputter deposition from an Al target to (100) n-GaAs at a base pressure ∼2×10−7 Torr. The Schottky barrier height was 0.75 eV (0.9 eV) when using the I-V (C-V) method with an ideality factor of 1.09 for the as-deposited samples. The Schottky barrier height increased to 0.97 eV (1.06 eV) with an ideality factor of 1.07 after annealing at 400 °C for 20 seconds. This barrier height, 0.97 eV, is the highest value reported for Al/n-GaAs diodes. The interfacial stability between Al and GaAs has been examined by cross section transmission electron microscopy. A (200) dark field cross section transmission electron microscopy image of the contact after annealing at 600 °C showed that the (Ga,Al)As phase formed at the interface and the enhancement of the Schottky barrier height was due to the formation of this phase.

Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes

2008 ◽  
Vol 63 (3-4) ◽  
pp. 199-202 ◽  
Author(s):  
Ahmet Faruk Ozdemir ◽  
Adnan Calik ◽  
Guven Cankaya ◽  
Osman Sahin ◽  
Nazim Ucar
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
Vickers Microhardness ◽  
Schottky Barrier Diodes ◽  
Microhardness Test ◽  
Current Voltage

Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (φb) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of φb with increasing indentation weight, while contacts showed a nonideal diode behaviour.

Gaussian distribution of Schottky barrier heights on SnO2 nanowires

2011 ◽  
Vol 1406 ◽  
Author(s):  
Cleber A. Amorim ◽  
Olivia M. Berengue ◽  
Luana Araújo ◽  
Edson R. Leite ◽  
Adenilson J. Chiquito
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Barrier Height ◽  
Series Resistance ◽  
Small Deviation ◽  
Thermionic Emission ◽  
Barrier Heights ◽  
Sno2 Nanowires ◽  
Different Temperatures

ABSTRACTIn this work, we studied metal/SnO2 junctions using transport properties. Parameters such as barrier height, ideality factor and series resistance were estimated at different temperatures. Schottky barrier height showed a small deviation of the theoretical value mainly because the barrier was considered fixed as described by ideal thermionic emission-diffusion model. These deviations have been explained by assuming the presence of barrier height inhomogeneities. Such assumption can also explain the high ideality factor as well as the Schottky barrier height and ideality factor dependence on temperature.

The Study of Silicon Diffusion into GaAs by Rapid Thermal Oxidation

1993 ◽  
Vol 318 ◽  
Author(s):  
W. S. Chen ◽  
C. Fu
Keyword(s):  
Schottky Barrier ◽  
Thermal Oxidation ◽  
Ideality Factor ◽  
Doping Level ◽  
Schottky Barrier Height ◽  
Schottky Barriers ◽  
Tunnel Effect ◽  
Electrical Measurements ◽  
Gaas Wafer ◽  
Rapid Thermal Oxidation

ABSTRACTThe diffusion of silicon into GaAs was investigated in this work. Shallow silicon carrier profile with doping levels in excess of 1018 cm−3 were obtained in GaAs by rapid thermal oxidation (RTO) of Si cap film in pure O2 with pressure 2 torr at 800 ∼ 900 ° C. SIMS revealed the presence of various degrees of interdiffusion in / near the interface between Si and GaAs as being a function of oxidation temperature and cap thickness. Ga and As atoms were observed in Si film. Silicon and oxygen were also found in the GaAs wafer. The silicon and arsenic atoms were segregated in / near the interface. The Si atoms could be driven further into GaAs by additional rapid thermal annealing (RTA) process. The above phenomena were confirmed by the electrical measurements taken on sheet resistance, doped dose, and mobility. The TaSix / GaAs Schottky barriers were also fabricated. The ideality factor, Schottky barrier height, and breakdown voltage are the functions of the doping level. This behavior could be accounted for by the theory of tunnel effect of Schottky barrier.

scholarly journals Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 283
Author(s):  
Dong-Hyeon Kim ◽  
Michael A. Schweitz ◽  
Sang-Mo Koo
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Chemical Bonding ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Bonding Structure ◽  
Current Voltage ◽  
Direct Indication

It is shown in this work that annealing of Schottky barrier diodes (SBDs) in the form of Ni/AlN/SiC heterojunction devices in an atmosphere of nitrogen and oxygen leads to a significant improvement in the electrical properties of the structures. Compared to the non-annealed device, the on/off ratio of the annealed SBD devices increased by approximately 100 times. The ideality factor, derived from the current-voltage (IV) characterization, decreased by a factor of ~5.1 after annealing, whereas the barrier height increased from ~0.52 to 0.71 eV. The bonding structure of the AlN layer was characterized by X-ray photoelectron spectroscopy. Examination of the N 1 s and O 1 s peaks provided direct indication of the most prevalent chemical bonding states of the elements.

Enhancement of Gold on n-InGaAs Schottky Barrier Height by Using a thin p-InP Layer

1994 ◽  
Vol 340 ◽  
Author(s):  
Bing Yang ◽  
J. C. Chen ◽  
F. S. Choa
Keyword(s):  
Surface Layer ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Great Reduction ◽  
Schottky Barrier Height ◽  
Electrical Measurements ◽  
Leakage Currents ◽  
Inp Surface

ABSTRACTIn this study, we demonstrate the enhancement of n-In0.53Ga0.47A s Schottky barrier height by using a thin (300-1800 Å) p-InP surface layer. An increase in the barrier height of 0.46 eV, making the total barrier height 0.66 eV, was obtained in a Au/p-InP/n-InGaAs structure, resulting in a great reduction of leakage currents. Results of the electrical measurements are summarized in table 1. The barrier height of n- In0.53Ga0.47As was increased from 0.2 eV to 0.66 eV when a 1200-Å-thick p-InP surface layer was employed.

scholarly journals High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications

2019 ◽  
Vol 9 (8) ◽  
pp. 1587
Author(s):  
Rahimah Mohd Saman ◽  
Sharaifah Kamariah Wan Sabli ◽  
Mohd Rofei Mat Hussin ◽  
Muhammad Hilmi Othman ◽  
Muhammad Aniq Shazni Mohammad Haniff ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Leakage Current ◽  
Barrier Layer ◽  
Ideality Factor ◽  
Schottky Barrier Height ◽  
Series Resistance ◽  
Measurement Data ◽  
Industrial Sectors

Graphene’s superior electronic and thermal properties have gained extensive attention from research and industrial sectors to study and develop the material for various applications such as in sensors and diodes. In this paper, the characteristics and performance of carbon-based nanostructure applied on a Trench Metal Oxide Semiconductor MOS barrier Schottky (TMBS) diode were investigated for high temperature application. The structure used for this study was silicon substrate with a trench and filled trench with gate oxide and polysilicon gate. A graphene nanowall (GNW) or carbon nanowall (CNW), as a barrier layer, was grown using the plasma enhanced chemical vapor deposition (PECVD) method. The TMBS device was then tested to determine the leakage current at 60 V under various temperature settings and compared against a conventional metal-based TMBS device using TiSi2 as a Schottky barrier layer. Current-voltage (I-V) measurement data were analyzed to obtain the Schottky barrier height, ideality factor, and series resistance (Rs) values. From I-V measurement, leakage current measured at 60 V and at 423 K of the GNW-TMBS and TiSi2-TMBS diodes were 0.0685 mA and above 10 mA, respectively, indicating that the GNW-TMBS diode has high operating temperature advantages. The Schottky barrier height, ideality factor, and series resistance based on dV/dln(J) vs. J for the GNW were calculated to be 0.703 eV, 1.64, and 35 ohm respectively.

Sign in / Sign up

Export Citation Format

Share Document