Measurement of Schottky barrier height tuning using dielectric dipole insertion method at metal–semiconductor interfaces by photoelectron spectroscopy and electrical characterization techniques

2013 ◽  
Vol 31 (2) ◽  
pp. 021202 ◽  
Author(s):  
Brian E. Coss ◽  
Prasanna Sivasubramani ◽  
Barry Brennan ◽  
Prashant Majhi ◽  
Robert M. Wallace ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Photoelectron Spectroscopy ◽  
Schottky Barrier Height ◽  
Electrical Characterization ◽  
Characterization Techniques ◽  
Semiconductor Interfaces ◽  
Insertion Method

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

scholarly journals Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation

2019 ◽  
Vol 9 (23) ◽  
pp. 5014
Author(s):  
Courtin ◽  
Moréac ◽  
Delhaye ◽  
Lépine ◽  
Tricot ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Surface Passivation ◽  
2D Materials ◽  
Semiconductor Interface ◽  
Weakly Interact ◽  
Fermi Level Pinning ◽  
Semiconductor Interfaces

Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals forces, deposition of 2D materials avoids the formation of the large density of state at the semiconductor interface often responsible for Fermi level pinning. Here, we demonstrate the possibility to alleviate Fermi-level pinning and reduce the Schottky barrier height by the association of surface passivation of germanium with the deposition of 2D graphene.

Enhancement of the Metal/Si-Doped AlGaAs Schottky Barrier Height by CH4/H2 Reactive Ion Etching

1993 ◽  
Vol 300 ◽  
Author(s):  
R. Pereira ◽  
M. Van Hove ◽  
W. De Raedt ◽  
J. Alay ◽  
H. Bender ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Photoelectron Spectroscopy ◽  
Schottky Barrier Height ◽  
Reactive Ion Etching ◽  
Electrical Measurements ◽  
Ion Etching ◽  
Si Doped ◽  
Cv Measurements

The damage introduced by CH4/H2 reactive ion etching (RIE) on Si-doped AlGaAs layers is studied by X-Ray Photoelectron Spectroscopy (XPS), Auger electron spectrocopy (AES) and electrical measurements on Schottky contacts. The XPS analysis of the surface stoichiometry after RIE exposure shows arsenic depletion and adsorbed carbon as the main characteristics. The carbon spectrum consists of a component due to atmospheric contamination and an additional photoelectron peak at 283 eV, which we correlate with the formation of Ga-C radicals at the AlGaAs surface during RIE. The reaction process at the Au/TiW/Ti/AlGaAs interface after RIE exposure and subsequent thermal annealing is monitored by AES. Also by this technique, carbon was detected at the Ti/AlGaAs interface and no interdiffusion was observed. The electrical behaviour of the contacts is characterized by capacitance-voltage (CV) and current-voltage (IV) measurements. Schottky barrier height, ideality factor and reverse breakdown were determined. The barrier height extracted from CV measurements of the samples exposed to RIE shows increased values (1.1 to 1.4 eV) compared to the reference samples (1.0 to 1.1 eV), depending on the aluminium concentration. The same behaviour was observed in the ideality factor. The results are explained by the formation of a p-n junction below the metal/AlGaAs barrier. Good agreement between experimental and theoretical values is found when the compensation of Si donors was taken into account.

Diamond Schottky Barrier Diode with Fluorine- and Oxygen-Termination

MRS Advances ◽  
2016 ◽  
Vol 1 (16) ◽  
pp. 1125-1130 ◽  
Author(s):  
Chao Hu ◽  
Zhangcheng Liu ◽  
Jingwen Zhang ◽  
Wei Wang ◽  
Hong-Xing Wang
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Photoelectron Spectroscopy ◽  
Schottky Barrier Height ◽  
Diamond Surface ◽  
Aqua Regia ◽  
X Ray ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve

ABSTRACTSchottky properties of Mo on diamond with fluorine- and oxygen-termination had been investigated. Oxygen-termination was generated by aqua regia. Fluorine-termination was generated by CF4plasma treatment. Mo/Ni/Au was deposited on the diamond surface as Schottky electrode, whose barrier height was evaluated from current-voltage curve. After that, the X-ray photoelectron spectroscopy methods were applied to calculate the Schottky barrier height of Mo on different termination surface. The results indicated that the fluorine-termination and oxygen-termination show different schottky properties.

Schottky barrier height on thermally oxidized InAlN surface evaluated by electrical and optical measurements

2011 ◽  
Vol 98 (16) ◽  
pp. 162111 ◽  
Author(s):  
J. Kováč ◽  
R. Šramatý ◽  
A. Chvála ◽  
H. Sibboni ◽  
E. Morvan ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Optical Measurements

Effective Schottky Barrier Height Lowering by TiN Capping Layer for TiSix/Si Power Diode

2015 ◽  
Vol 36 (6) ◽  
pp. 597-599 ◽  
Author(s):  
Lin-Lin Wang ◽  
Wu Peng ◽  
Yu-Long Jiang ◽  
Bing-Zong Li
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Capping Layer ◽  
Power Diode
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