The Photoemission from Superlattices of III-V Semiconductors with Graded Interfaces Under Quantizing Magnetic Field

1994 ◽  
Vol 299 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
Badal De
Keyword(s):  
Magnetic Field ◽  
Theoretical Analysis ◽  
Electron Concentration ◽  
Quantum Limit ◽  
Super Lattice ◽  
Dispersion Law ◽  
Magnetic Quantization ◽  
Wide Gap ◽  
Quantizing Magnetic Field

AbstractIn this paper we have studied the photoemission from super-lattices of III-V semiconductors under magnetic quantization by formulating a new dispersion law. It is found, taking InAs/GaSb super-lattice with graded interfaces as an example that the photoemission, increases with increasing electron concentration in an oscillatory way and increases with decreasing magnetic field in the magnetic quantum limit. Besides, the photoemission in superlattices is much greater than that of the constituent materials and the well-known results for wide-gap materials have also been obtained from our generalized analysis. In addition, the theoretical analysis is in agreement with the experimental datas as given elsewhere.

The Influence of Quantizing Magnetic Field on The Magnetic Susceptibilities in Ultra Thin Films of Dilute Magnetic Materials

1993 ◽  
Vol 313 ◽  
Author(s):  
Kamakhya P Ghatak ◽  
S. N. Biswas
Keyword(s):  
Magnetic Field ◽  
Experimental Data ◽  
Thin Films ◽  
Theoretical Analysis ◽  
Film Thickness ◽  
Magnetic Materials ◽  
Ultrathin Films ◽  
Surface Concentration ◽  
Magnetic Susceptibilities ◽  
Quantizing Magnetic Field

ABSTRACTIn this paper we have studied the dia and paramagnetic susceptibilities of the holes in ultrathin films of dilute magnetic materials in the presence of a quantizing magnetic field and compared the same with that of the bulk specimens under magnetic quantization for the purpose of relative comparison. It is found, taking Hg1−xMnxTe and Cd1−xMnxSe as examples, that both the susceptibilities increase with decreasing film thickness and increasing surface concentration in oscillatory Manners. The numerical values of the susceptibilities in ultrathin films of dilute magnetic materials are greater than that of the bulk and the theoretical analysis is in agreement with the experimental data as reported elsewhere.

The Magneto Electron Statistics in Heavily Doped N Type-Intrinsic-P Type-Intrinsic Structures

2021 ◽  
Vol 21 (12) ◽  
pp. 6183-6187
Author(s):  
P. K. Das ◽  
J. Pal ◽  
M. Debbarma ◽  
K. P. Ghatak
Keyword(s):  
Magnetic Field ◽  
Band Structure ◽  
Electron Concentration ◽  
Fermi Energy ◽  
Energy Band ◽  
Electronic Materials ◽  
Numerical Magnitudes ◽  
Heavily Doped ◽  
Quantizing Magnetic Field ◽  
P Type

In this paper we study the Electron Statistics in Heavily Doped N Type-Intrinsic-P Type-Intrinsic structures of non-linear optical, tetragonal and opto-electronic materials in the presence of magnetic quantization. It is found taking such heavily doped structures of Cd3As2, CdGeAs2, InAs, InSb, Hg1−xCdxTe, In1−xGaxAsyP1−y as examples that the Fermi energy (EF) oscillates with inverse quantizing magnetic field (1/B) and increases with increasing electron concentration with different numerical magnitudes which is the signature of respective band structure. The numerical value of the Fermi energy is different in different cases due to the different values of the energy band constants.

Effect of a quantizing magnetic field on the Einstein relation in bismuth

1989 ◽  
Vol 67 (1) ◽  
pp. 72-75 ◽  
Author(s):  
M. Mondal ◽  
S. N. Banik ◽  
K. P. Ghatak
Keyword(s):  
Magnetic Field ◽  
Energy Spectrum ◽  
Dispersion Relation ◽  
Einstein Relation ◽  
Energy Bands ◽  
Magnetic Quantization ◽  
Quantizing Magnetic Field ◽  
Special Case

An attempt is made to study the Einstein relation of the carriers in bismuth under magnetic quantization on the basis of the Abrikosov dispersion relation, which includes various types of anisotropics in the energy spectrum. It is found, taking spin and broadening into account, that the same ratio oscillates with the inverse quantizing magnetic field and increases with increasing carrier degeneracy respectively. In addition, the corresponding well-known result of parabolic energy bands is also obtained from the generalized expression as a special case.

Thermoelectric Power in Quantum Confined Optoelectronic Materials under Classically Large Magnetic Field

1990 ◽  
Vol 184 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
B. De ◽  
M. Mondal ◽  
S. N. Biswas
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Quantum Wells ◽  
Thermoelectric Power ◽  
Electron Concentration ◽  
Optoelectronic Materials ◽  
Large Magnetic Field ◽  
Dispersion Law ◽  
Quantum Well Wires ◽  
Electron Dispersion

ABSTRACTWe shall study the thermoelectric power under classically large magnetic field (TPM) in optoelectronic materials of quantum wells (QWs), quantum well wires (QWW's), quantum dots (QDs) and compare the same with the bulk specimens of optoelectronic materials by formulating the respective electron dispersion law. The TPM increases with decreasing electron concentration in an oscillatory manner in all the cases, taking n-Hg1−xCdxTe as an example. The TPM in QD is greatest and the least for quantum wells respectively. The thecoretical results are in agreement with the experimental observations as reported elsewhere.

scholarly journals DISTRIBUTION OF EQUILIBRIUM EDGE CURRENTS

2003 ◽  
Vol 02 (06) ◽  
pp. 611-617
Author(s):  
M. V. ENTIN ◽  
L. I. MAGARILL ◽  
M. M. MAHMOODIAN
Keyword(s):  
Magnetic Field ◽  
Strong Magnetic Field ◽  
Current Density ◽  
Landau Levels ◽  
Quantum Limit ◽  
Additional Component ◽  
Edge Current ◽  
2D System ◽  
Quantizing Magnetic Field ◽  
Normal Magnetic Field

The distribution of equilibrium edge current density in 2D system subjected to a strong (quantizing) magnetic field has been studied. The case of half plane in normal magnetic field has been considered. The transition from classical strong magnetic field to ultra-quantum limit has been investigated. We have shown that the edge current density oscillates and decays with distance from the edge. The oscillations have been attributed to the Fermi wavelength of electrons. The additional component of the current smoothly depending on the distance but sensitive to the occupation of Landau levels has been found. The temperature suppression of oscillations has been studied.

The Diffusivity-Mobilitt Ratio Under Strong Magnetic Field in III-V Superlattices with Graded Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
Badal De
Keyword(s):  
Magnetic Field ◽  
Experimental Method ◽  
Strong Magnetic Field ◽  
Mobility Ratio ◽  
Einstein Relation ◽  
Dispersion Law ◽  
Magnetic Quantization ◽  
Graded Structures ◽  
Theoretical Results

ABSTRACTIn this paper we have studied the Einstein relation for the diffusivity-mobility ratio in III-V superlattices with graded structures under magnetic quantization by formulating a new dispersion law. It is found, taking InAs/GaSb an example that the diffusivity mobility ratio increases in an oscillatory way with increasing carrier degeneracy as a consequence4SdH effect. The Einstein relation in IIIV superlattice is greater than that of the same for the constituent materials. Besides the theoretical results are in agreement with the suggested experimental method of determining the same ratio in degenerate materials having arbitrary dispersion laws.

The Einstein Relation in Superlattices OP Wide-Band Gap Semiconductors Onder Cross-Field Configuration

1992 ◽  
Vol 242 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
Badal De
Keyword(s):  
Magnetic Field ◽  
Band Gap ◽  
Electron Concentration ◽  
Wide Band ◽  
Field Configuration ◽  
Landau Levels ◽  
Einstein Relation ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
Quantizing Magnetic Field

ABSTRACTin this paper we study the Einstein relation in superlattices of wide-band gap semiconductors under crossfield configuration and the for.-ning materials incorporating spin and broadening of Landau levels, it is found, taking GaAs/AÀAs superlattice as an example that the diffusivity-mobility ratio increases with increasing electron concentration and oscillates with inverse quantizing magnetic field due to SdH effect. Thetheoretical analysis is in agreement with the suggested experimental method of determining the same ratio in degenerate materials having arbitrary dispersion laws.

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