The Einstein Relation in Superlattices OP Wide-Band Gap Semiconductors Onder Cross-Field Configuration

1992 ◽  
Vol 242 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
Badal De
Keyword(s):  
Magnetic Field ◽  
Band Gap ◽  
Electron Concentration ◽  
Wide Band ◽  
Field Configuration ◽  
Landau Levels ◽  
Einstein Relation ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
Quantizing Magnetic Field

ABSTRACTin this paper we study the Einstein relation in superlattices of wide-band gap semiconductors under crossfield configuration and the for.-ning materials incorporating spin and broadening of Landau levels, it is found, taking GaAs/AÀAs superlattice as an example that the diffusivity-mobility ratio increases with increasing electron concentration and oscillates with inverse quantizing magnetic field due to SdH effect. Thetheoretical analysis is in agreement with the suggested experimental method of determining the same ratio in degenerate materials having arbitrary dispersion laws.

On the Burste In-Moss Shift in Quantum Confined Wide-Band Gap Semiconductors

1992 ◽  
Vol 242 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
Badal De
Keyword(s):  
Quantum Dots ◽  
Theoretical Analysis ◽  
Quantum Wells ◽  
Band Gap ◽  
Electron Concentration ◽  
Wide Band ◽  
Experimental Results ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
Wide Gap

ABSTRACTWe study the Burstein-Moss shift (BMS) in quantum wiies and quantum dots of wide-gap semiconductors, taking Ge as an example, it is found that the BMS increases with increasing electron concentration in a ladder like manner. The numerical values of the BMS is greatest in quantum dots and least in quantum wells. The theoretical analysis is in agreement with the experimental results as given elsewhere.

A pathway to p-type wide-band-gap semiconductors

2009 ◽  
Vol 95 (17) ◽  
pp. 172109 ◽  
Author(s):  
Anderson Janotti ◽  
Eric Snow ◽  
Chris G. Van de Walle
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
P Type

scholarly journals Solid solubility of rare earth elements (Nd, Eu, Tb) in In2−xSnxO3 – effect on electrical conductivity and optical properties

2014 ◽  
Vol 43 (25) ◽  
pp. 9620-9632 ◽  
Author(s):  
T. O. L. Sunde ◽  
M. Lindgren ◽  
T. O. Mason ◽  
M.-A. Einarsrud ◽  
T. Grande
Keyword(s):  
Electrical Conductivity ◽  
Optical Properties ◽  
Rare Earth ◽  
Rare Earth Elements ◽  
Band Gap ◽  
Solid Solubility ◽  
Wide Band ◽  
Wide Band Gap ◽  
Recent Interest ◽  
Wide Band Gap Semiconductors

Wide band-gap semiconductors doped with luminescent rare earth elements (REEs) have attracted recent interest due to their unique optical properties.

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