Enhanced Luminescence and Optical Cavity Modes from Uniformly Etched Porous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
Vincent V. Doan ◽  
C. L. Curtis ◽  
G. M. Credo ◽  
M. J. Sailor ◽  
R. M. Penner
Keyword(s):  
Fine Structure ◽  
Porous Silicon ◽  
Optical Cavity ◽  
Green Light ◽  
Longitudinal Optical ◽  
Porous Si ◽  
Spectral Changes ◽  
Cavity Modes ◽  
Enhanced Luminescence ◽  
Intrinsic Emission

AbstractUniform layers of porous silicon have been produced in a photoelectrochemical etch that show intensity enhancements of up to 100 fold, relative to samples etched in the dark. These films can also show fine structure in their photoluminescence (PL) spectra characteristic of longitudinal optical cavity modes. The highly luminescent, uniform porous layer is generated by illumination with blue or green light during the electrochemical etch of singlecrystal (B-doped) Si, and the enhancement is attributed to a localized photochemical etch process. The relevance of the increased PL intensity and interference-induced spectral changes to measurements of the intrinsic emission spectrum of porous Si are discussed.

Development of a Porous Silicon Based Biosensor

1998 ◽  
Vol 536 ◽  
Author(s):  
Keiki-Pua S. Dancil ◽  
Douglas P. Greiner ◽  
Michael J. Sailor
Keyword(s):  
Porous Silicon ◽  
Protein Interactions ◽  
Optical Cavity ◽  
Protein A ◽  
Longitudinal Optical ◽  
Thin Layers ◽  
Protein Protein Interactions ◽  
Cavity Modes ◽  
Fabry Perot ◽  
Silicon Based

AbstractIn this paper we demonstrate that porous silicon (PS) can be used as an immobilization matrix and a transducer for biosensor applications. Thin layers of PS were fabricated showing fine structure in their reflection spectra, characteristic of longitudinal optical cavity modes, or Fabry-Perot interference fringes. The PS surface was modified by covalently bonding streptavidin to a heterobifunctional linker immobilized to the surface using common silane chemistry. The mode spacing and wavelength in the interference spectrum was modified, by displacing buffer and introducing proteins into the PS layer. Protein-protein interactions between immobilized Streptavidin and biotinylated Protein A followed by Protein A and IgG were detected. The surface was regenerated during the course of the experiment showing reversibility of the sensor at the third layer.

Observation of Optical Cavity Modes in Photoluminescent Porous Silicon Films

1993 ◽  
Vol 140 (12) ◽  
pp. 3492-3494 ◽  
Author(s):  
Corrine L. Curtis ◽  
Vincent V. Doan ◽  
Grace M. Credo ◽  
Michael J. Sailor
Keyword(s):  
Porous Silicon ◽  
Optical Cavity ◽  
Silicon Films ◽  
Cavity Modes

Unimportance of Siloxene in Luminescent Porous Silicon as Determined by Nexafs & Exafs

1993 ◽  
Vol 298 ◽  
Author(s):  
S.L. Friedman ◽  
M.A. Marcus ◽  
D.L. Adler ◽  
Y.-H. Xie ◽  
T.D. Harris ◽  
...  
Keyword(s):  
Fine Structure ◽  
Porous Silicon ◽  
Room Temperature ◽  
Emission Spectra ◽  
Porous Si ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption ◽  
Room Temperature Luminescence ◽  
Combined Data

AbstractNear-edge-- and extended--x-ray absorption fine structure measurements, as well as luminescence excitation and emission spectra, were obtained from samples of porous Si and siloxene. Contrary to a recently proposed explanation for the room temperature luminescence in porous Si, the combined data indicate that siloxene is not principally responsible for the observed effect.

Si K-edge X-ray absorption fine structure studies of porous silicon

1992 ◽  
Vol 70 (10-11) ◽  
pp. 813-818 ◽  
Author(s):  
T. K. Sham ◽  
X. H. Feng ◽  
D. T. Jiang ◽  
B. X. Yang ◽  
J. Z. Xiong ◽  
...  
Keyword(s):  
Fine Structure ◽  
Porous Silicon ◽  
Surface Oxygen ◽  
Porous Si ◽  
Oxygen Compound ◽  
X Ray ◽  
Absorption Fine ◽  
Fine Structures ◽  
X Ray Absorption ◽  
Si Wafer

X-ray absorption fine structure (XAFS) spectra of porous Si prepared by the anodization of a Si wafer in aqueous HF solution have been obtained with synchrotron radiation. The Si K-edge near-edge X-ray absorption fine structure and extended X-ray absorption fine structures clearly show that porous silicon samples that have been exposed to the ambient environment (untreated) have an oxide layer, while the "clean" (treated) porous Si sample regenerated by HF treatment shows some degradation in its crystallinity. Noticeable differences in the XAFS between porous Si and crystalline Si are noted. The results and implications of this observation and the chemistry leading to the formation of surface oxygen compound are discussed.

New Results on Electroluminescence from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
Peter Steiner ◽  
Frank Kozlowski ◽  
Hermann Sandmaier ◽  
Walter Lang
Keyword(s):  
Porous Silicon ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Green Light ◽  
Light Emitting ◽  
Porous Region ◽  
First Results

ABSTRACTFirst results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10-7 to 10-5 and an orange spectrum. Over the last year some progress was achieved:- By applying UV-light during the etching blue and green light emitting diodes in porous silicon are fabricated.- When a p/n junction is realized within the porous region, a quantum efficiency of 10-4 is obtained.

Engineering the sensitivity of macroscopic physical systems to variations in the fine-structure constant

2021 ◽  
Author(s):  
Beata Zjawin ◽  
Marcin Bober ◽  
Roman Ciuryło ◽  
Daniel Lisak ◽  
Michał Zawada ◽  
...  
Keyword(s):  
Fine Structure ◽  
Optical Cavity ◽  
Structure Constant ◽  
Relativistic Effects ◽  
Fine Structure Constant ◽  
Sensitivity Factor ◽  
Optical Cavities ◽  
Physical Systems ◽  
Heavy Atoms ◽  
Nuclear Transitions

Abstract Experiments aimed at searching for variations in the fine-structure constant α are based on spectroscopy of transitions in microscopic bound systems, such as atoms and ions, or resonances in optical cavities. The sensitivities of these systems to variations in α are typically on the order of unity and are fixed for a given system. For heavy atoms, highly charged ions and nuclear transitions, the sensitivity can be increased by benefiting from the relativistic effects and favorable arrangement of quantum states. This article proposes a new method for controlling the sensitivity factor of macroscopic physical systems. Specific concepts of optical cavities with tunable sensitivity to α are described. These systems show qualitatively different properties from those of previous studies of the sensitivity of macroscopic systems to variations in α, in which the sensitivity was found to be fixed and fundamentally limited to an order of unity. Although possible experimental constraints attainable with the specific optical cavity arrangements proposed in this article do not yet exceed the present best constraints on α variations, this work paves the way for developing new approaches to searching for variations in the fundamental constants of physics.

Enhancement of efficiency in graphene/porous silicon solar cells by co-doping graphene with gold nanoparticles and bis(trifluoromethanesulfonyl)-amide

2017 ◽  
Vol 5 (35) ◽  
pp. 9005-9011 ◽  
Author(s):  
Ju Hwan Kim ◽  
Dong Hee Shin ◽  
Ha Seung Lee ◽  
Chan Wook Jang ◽  
Jong Min Kim ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
Solar Cells ◽  
Porous Silicon ◽  
Au Nanoparticles ◽  
Silicon Solar Cells ◽  
Porous Si ◽  
Co Doping ◽  
Si Solar Cells ◽  
First Time

The co-doping of graphene with Au nanoparticles and bis(trifluoromethanesulfonyl)-amide is employed for the first time to enhance the performance of graphene/porous Si solar cells.

Visible Electro- and Photoluminescence from Porous Silicon and its Related Optoelectronic Properties

1991 ◽  
Vol 256 ◽  
Author(s):  
Nobuyoshi Koshida ◽  
Hideki Koyama
Keyword(s):  
Porous Silicon ◽  
Optical Absorption ◽  
Size Effect ◽  
Band Gap ◽  
Visible Region ◽  
Optoelectronic Properties ◽  
Porous Si ◽  
Quantum Size ◽  
Effect Model ◽  
Injection Type

ABSTRACTThe optoelectronic properties of porous Si (PS) are presented in terms of electroluminescence (EL), photoluminescence (PL), photoconduction (PC), and optical absorption. Observations of injection-type EL, efficient PL, band-gap widening, and photosensitivities In the visible region are consistent with the quantum size effect model in PS.

scholarly journals Morphology and FT IR spectra of porous silicon

2017 ◽  
Vol 68 (7) ◽  
pp. 53-57 ◽  
Author(s):  
Martin Kopani ◽  
Milan Mikula ◽  
Daniel Kosnac ◽  
Jan Gregus ◽  
Emil Pincik
Keyword(s):  
Porous Silicon ◽  
Ir Spectra ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Layer Formation ◽  
Porous Si ◽  
Ft Ir ◽  
P Type ◽  
Type Sample ◽  
Ftir Investigation

AbstractThe morphology and chemical bods of p-type and n-type porous Si was compared. The surface of n-type sample is smooth, homogenous without any features. The surface of p-type sample reveals micrometer-sized islands. FTIR investigation reveals various distribution of SiOxHycomplexes in both p-and n-type samples. From the conditions leading to porous silicon layer formation (the presence of holes) we suggest both SiOxHyand SiFxHycomplexes in the layer.

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