Observation of Optical Cavity Modes in Photoluminescent Porous Silicon Films

1993 ◽  
Vol 140 (12) ◽  
pp. 3492-3494 ◽  
Author(s):  
Corrine L. Curtis ◽  
Vincent V. Doan ◽  
Grace M. Credo ◽  
Michael J. Sailor
1998 ◽  
Vol 536 ◽  
Author(s):  
Keiki-Pua S. Dancil ◽  
Douglas P. Greiner ◽  
Michael J. Sailor

AbstractIn this paper we demonstrate that porous silicon (PS) can be used as an immobilization matrix and a transducer for biosensor applications. Thin layers of PS were fabricated showing fine structure in their reflection spectra, characteristic of longitudinal optical cavity modes, or Fabry-Perot interference fringes. The PS surface was modified by covalently bonding streptavidin to a heterobifunctional linker immobilized to the surface using common silane chemistry. The mode spacing and wavelength in the interference spectrum was modified, by displacing buffer and introducing proteins into the PS layer. Protein-protein interactions between immobilized Streptavidin and biotinylated Protein A followed by Protein A and IgG were detected. The surface was regenerated during the course of the experiment showing reversibility of the sensor at the third layer.


1993 ◽  
Vol 298 ◽  
Author(s):  
Vincent V. Doan ◽  
C. L. Curtis ◽  
G. M. Credo ◽  
M. J. Sailor ◽  
R. M. Penner

AbstractUniform layers of porous silicon have been produced in a photoelectrochemical etch that show intensity enhancements of up to 100 fold, relative to samples etched in the dark. These films can also show fine structure in their photoluminescence (PL) spectra characteristic of longitudinal optical cavity modes. The highly luminescent, uniform porous layer is generated by illumination with blue or green light during the electrochemical etch of singlecrystal (B-doped) Si, and the enhancement is attributed to a localized photochemical etch process. The relevance of the increased PL intensity and interference-induced spectral changes to measurements of the intrinsic emission spectrum of porous Si are discussed.


1998 ◽  
Vol 80 (1-4) ◽  
pp. 163-167 ◽  
Author(s):  
L. Schirone ◽  
G. Sotgiu ◽  
M. Montecchi
Keyword(s):  

1997 ◽  
Vol 101 (1) ◽  
pp. 33-37 ◽  
Author(s):  
S.P. Duttagupta ◽  
X.L. Chen ◽  
S.A. Jenekhe ◽  
P.M. Fauchet
Keyword(s):  

1998 ◽  
Vol 536 ◽  
Author(s):  
H. Koyama ◽  
P. M. Fauchet

AbstractThe optical properties of oxidized free-standing porous silicon films excited by a cw laser have been investigated. It is found that samples oxidized at 800–950 °C show a strongly superlinear light emission at an excitation intensity of ∼10 W/cm2. This emission has a peak at 900–1100 nm and shows a blueshift as the oxidation temperature is increased. These samples also show a very large induced absorption, where the transmittance is found to decrease reversibly by ≤99.7 %.The induced absorption increases linearly with increasing pump laser intensity. Both the superlinear emission and the large induced absorption are quenched when the samples are attached to materials with a higher thermal conductivity, suggesting that laser-induced thermal effects are responsible for these phenomena.


Nano Letters ◽  
2013 ◽  
Vol 13 (11) ◽  
pp. 5528-5533 ◽  
Author(s):  
Yuma Ohkura ◽  
Jeffrey M. Weisse ◽  
Lili Cai ◽  
Xiaolin Zheng

2018 ◽  
Vol 165 (9) ◽  
pp. X8-X8
Author(s):  
M. B. Gongalsky ◽  
A. A. Koval ◽  
S. N. Shevchenko ◽  
K. P. Tamarov ◽  
L. A. Osminkina

2015 ◽  
Vol 66 (8) ◽  
pp. 31-39
Author(s):  
V. Chaudoy ◽  
E. Luais ◽  
F. Ghamouss ◽  
T. Defforge ◽  
S. Desplobain ◽  
...  

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