Large Area Position Sensitive Detector Based on Amorphous Silicon Technology

1993 ◽  
Vol 297 ◽  
Author(s):  
E. Fortunato ◽  
M. Vieira ◽  
L. Ferreira ◽  
C.N. Carvalho ◽  
G. Lavareda ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Position Sensitive Detector ◽  
Back Side ◽  
Sensitive Detector ◽  
Metal Contacts ◽  
Key Factors ◽  
Large Area ◽  
Position Sensitive

We have developed a rectangular dual-axis large area Position Sensitive Detector (PSD), with 5 cm × 5 cm detection area, based on PIN hydrogenated amorphous silicon (a-Si:H) technology, produced by Plasma Enhanced Chemical Vapor Deposition (PECVD). The metal contacts are located in the four edges of the detected area, two of them located on the back side of the ITO/PIN/A1 structure and the others two located in the front side. The key factors of the detectors resolution and linearity are the thickness uniformity of the different layers, the geometry and the contacts location. Besides that, edge effects on the sensor's corner disturb the linearity of the detector. In this paper we present results concerning the linearity of the detector as well as its optoelectronic characteristics and the role of the i-layer thickness on the final sensor performances.

New ultra-light flexible large area thin film position sensitive detector based on amorphous silicon

2000 ◽  
Vol 266-269 ◽  
pp. 1213-1217 ◽  
Author(s):  
E. Fortunato ◽  
I. Ferreira ◽  
F. Giuliani ◽  
P. Wurmsdobler ◽  
R. Martins
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Position Sensitive Detector ◽  
Sensitive Detector ◽  
Large Area ◽  
Position Sensitive

scholarly journals New beam line for time-of-flight medium energy ion scattering with large area position sensitive detector

2012 ◽  
Vol 83 (9) ◽  
pp. 095107 ◽  
Author(s):  
M. K. Linnarsson ◽  
A. Hallén ◽  
J. Åström ◽  
D. Primetzhofer ◽  
S. Legendre ◽  
...  
Keyword(s):  
Time Of Flight ◽  
Beam Line ◽  
Position Sensitive Detector ◽  
Sensitive Detector ◽  
Medium Energy ◽  
Ion Scattering ◽  
Large Area ◽  
Position Sensitive ◽  
Medium Energy Ion Scattering

Performances presented by a position-sensitive detector based on amorphous silicon technology

1993 ◽  
Author(s):  
Elvira Fortunato ◽  
Manuela Vieira ◽  
Carlos N. Carvalho ◽  
Guilherme Lavareda ◽  
Rodrigo Martins ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Position Sensitive Detector ◽  
Sensitive Detector ◽  
Silicon Technology ◽  
Position Sensitive

Thin film position sensitive detector based on amorphous silicon p–i–n diode

1994 ◽  
Vol 65 (12) ◽  
pp. 3784-3786 ◽  
Author(s):  
Elvira Fortunato ◽  
Guilherme Lavareda ◽  
Manuela Vieira ◽  
Rodrigo Martins
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Position Sensitive Detector ◽  
Sensitive Detector ◽  
Position Sensitive

Color sensing ability of an amorphous silicon position sensitive detector array system

2014 ◽  
Vol 205 ◽  
pp. 26-37 ◽  
Author(s):  
Javier Contreras ◽  
Rodrigo Martins ◽  
Pawel Wojcik ◽  
Sergej Filonovich ◽  
Hugo Aguas ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Position Sensitive Detector ◽  
Detector Array ◽  
Sensitive Detector ◽  
Position Sensitive

Application of Amorphous Silicon Thin-Film Position-Sensitive Detector to Optical Rules

2001 ◽  
Vol 3 (3) ◽  
pp. 174-177 ◽  
Author(s):  
R. Martins ◽  
P. Teodoro ◽  
F. Soares ◽  
I. Ferreira ◽  
N. Guimarães ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Position Sensitive Detector ◽  
Sensitive Detector ◽  
Silicon Thin Film ◽  
Position Sensitive

Imaging Transfer Devices Operated by PSD Mode a-Si P-I-N Junctions

1989 ◽  
Vol 149 ◽  
Author(s):  
M. Yamaguchi ◽  
S. Murakami ◽  
S. Todo ◽  
Y. Tawada
Keyword(s):  
Image Sensor ◽  
Two Dimensional ◽  
Key Factors ◽  
Large Area ◽  
One Dimensional ◽  
Display Devices ◽  
Advantages And Disadvantages ◽  
Position Sensitive ◽  
Deposition Techniques

ABSTRACTTwo types of position sensitive device (PSD) using a-Si:H thin films have been developed. One has been produced by large area plasma CVD, with usual metal deposition techniques. The other is the application of a linear image sensor as a one dimensional position sensor. There are some advantages and disadvantages in these two types of position sensitive device. Resolution of the linear image sensor is limited by the size of the elements and the pitch; in contrast, uniformity of the electrodes on the p-i-n diode and thickness of the a-Si thin film are the key factors for the resolution of one and two dimensional analogue PSDs.The analogue PSD is applicable to a digitizer which takes the role of a man-machine (computer) interface. The large area two dimensional digitizer was fabricated using the same technique as large area solar cell production, and was shown to be useful as a drawing tool on a CRT or other display devices with the aid of a micro-computer.

Hydrogenated amorphous silicon position sensitive detector

1985 ◽  
Vol 57 (10) ◽  
pp. 4778-4782 ◽  
Author(s):  
Satoshi Arimoto ◽  
Hidekazu Yamamoto ◽  
Hideo Ohno ◽  
Hideki Hasegawa
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Position Sensitive Detector ◽  
Sensitive Detector ◽  
Position Sensitive ◽  
Hydrogenated Amorphous
Sign in / Sign up

Export Citation Format

Share Document