Imaging Transfer Devices Operated by PSD Mode a-Si P-I-N Junctions

1989 ◽  
Vol 149 ◽  
Author(s):  
M. Yamaguchi ◽  
S. Murakami ◽  
S. Todo ◽  
Y. Tawada
Keyword(s):  
Image Sensor ◽  
Two Dimensional ◽  
Key Factors ◽  
Large Area ◽  
One Dimensional ◽  
Display Devices ◽  
Advantages And Disadvantages ◽  
Position Sensitive ◽  
Deposition Techniques

ABSTRACTTwo types of position sensitive device (PSD) using a-Si:H thin films have been developed. One has been produced by large area plasma CVD, with usual metal deposition techniques. The other is the application of a linear image sensor as a one dimensional position sensor. There are some advantages and disadvantages in these two types of position sensitive device. Resolution of the linear image sensor is limited by the size of the elements and the pitch; in contrast, uniformity of the electrodes on the p-i-n diode and thickness of the a-Si thin film are the key factors for the resolution of one and two dimensional analogue PSDs.The analogue PSD is applicable to a digitizer which takes the role of a man-machine (computer) interface. The large area two dimensional digitizer was fabricated using the same technique as large area solar cell production, and was shown to be useful as a drawing tool on a CRT or other display devices with the aid of a micro-computer.

Large Area Position Sensitive Detector Based on Amorphous Silicon Technology

1993 ◽  
Vol 297 ◽  
Author(s):  
E. Fortunato ◽  
M. Vieira ◽  
L. Ferreira ◽  
C.N. Carvalho ◽  
G. Lavareda ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Position Sensitive Detector ◽  
Back Side ◽  
Sensitive Detector ◽  
Metal Contacts ◽  
Key Factors ◽  
Large Area ◽  
Position Sensitive

We have developed a rectangular dual-axis large area Position Sensitive Detector (PSD), with 5 cm × 5 cm detection area, based on PIN hydrogenated amorphous silicon (a-Si:H) technology, produced by Plasma Enhanced Chemical Vapor Deposition (PECVD). The metal contacts are located in the four edges of the detected area, two of them located on the back side of the ITO/PIN/A1 structure and the others two located in the front side. The key factors of the detectors resolution and linearity are the thickness uniformity of the different layers, the geometry and the contacts location. Besides that, edge effects on the sensor's corner disturb the linearity of the detector. In this paper we present results concerning the linearity of the detector as well as its optoelectronic characteristics and the role of the i-layer thickness on the final sensor performances.

Cyano-Functionalized Porphyrins on Cu(111) from One-Dimensional Wires to Two-Dimensional Molecular Frameworks: On the Role of Co-Deposited Metal Atoms

2020 ◽  
Vol 32 (5) ◽  
pp. 2114-2122
Author(s):  
Alisson Ceccatto dos Santos ◽  
Rodrigo Cezar de Campos Ferreira ◽  
Juan Carlos Moreno-López ◽  
Lucas Barreto ◽  
Michael Lepper ◽  
...  
Keyword(s):  
Two Dimensional ◽  
One Dimensional ◽  
Metal Atoms ◽  
Deposited Metal

scholarly journals Two-Dimensional Materials in Large-Areas: Synthesis, Properties and Applications

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Ali Zavabeti ◽  
Azmira Jannat ◽  
Li Zhong ◽  
Azhar Ali Haidry ◽  
Zhengjun Yao ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Large Area ◽  
Large Crystal ◽  
High Quality ◽  
Future Technology ◽  
Advantages And Disadvantages ◽  
Grain Sizes ◽  
Two Dimensional Materials ◽  
Synthesis Properties ◽  
Synthetic Routes

AbstractLarge-area and high-quality two-dimensional crystals are the basis for the development of the next-generation electronic and optical devices. The synthesis of two-dimensional materials in wafer scales is the first critical step for future technology uptake by the industries; however, currently presented as a significant challenge. Substantial efforts have been devoted to producing atomically thin two-dimensional materials with large lateral dimensions, controllable and uniform thicknesses, large crystal domains and minimum defects. In this review, recent advances in synthetic routes to obtain high-quality two-dimensional crystals with lateral sizes exceeding a hundred micrometres are outlined. Applications of the achieved large-area two-dimensional crystals in electronics and optoelectronics are summarised, and advantages and disadvantages of each approach considering ease of the synthesis, defects, grain sizes and uniformity are discussed.

Stress Measurements with a Two-Dimensional Real-Time System

1988 ◽  
Vol 32 ◽  
pp. 397-406 ◽  
Author(s):  
G.M. Borgonovi ◽  
C.P. Gazza
Keyword(s):  
Two Dimensional ◽  
Single Exposure ◽  
Time System ◽  
Real Time System ◽  
One Dimensional ◽  
Potential Source ◽  
Position Sensitive ◽  
Position Sensitive Detectors ◽  
Exposure Technique

Conventional methods of determination of residual stress in polycrystalline samples use either diffractometers or one-dimensional position-sensitive detectors. The most commonly used technique, the so-called "sin2ψ" method, requires several measurements at different angular positions of the sample. With diffractometers, two rotations are required, while with one-dimensional detectors, one rotation is required (except for the so-called single exposure technique, which requires two one-dimensional position-sensitive detectors). Rotation can be a potential source of errors if the sample is not aligned very carefully.

scholarly journals A two-dimensional position-sensitive microchannel plate detector realized with two independent one-dimensional resistive anodes

2018 ◽  
Vol 89 (7) ◽  
pp. 073302 ◽  
Author(s):  
Yuezhao Zhang ◽  
Deyang Yu ◽  
Junliang Liu ◽  
Liping Yang ◽  
Wei Wang ◽  
...  
Keyword(s):  
Microchannel Plate ◽  
Two Dimensional ◽  
One Dimensional ◽  
Position Sensitive

Large-area, two-dimensional position sensitive detectors

1979 ◽  
Vol 162 (1-3) ◽  
pp. 657-675 ◽  
Author(s):  
U. Lynen ◽  
H. Stelzer ◽  
A. Gobbi ◽  
H. Sann ◽  
A. Olmi
Keyword(s):  
Two Dimensional ◽  
Large Area ◽  
Position Sensitive ◽  
Position Sensitive Detectors

scholarly journals Wake and wave resistance on viscous thin films

2016 ◽  
Vol 792 ◽  
pp. 829-849 ◽  
Author(s):  
René Ledesma-Alonso ◽  
Michael Benzaquen ◽  
Thomas Salez ◽  
Elie Raphaël
Keyword(s):  
Pressure Field ◽  
Finite Size ◽  
External Source ◽  
External Pressure ◽  
Wave Resistance ◽  
Two Dimensional ◽  
Pressure Source ◽  
One Dimensional ◽  
Speed Up

The effect of an external pressure disturbance, being displaced with a constant speed along the free surface of a viscous thin film, is studied theoretically in the lubrication approximation in one- and two-dimensional geometries. In the comoving frame, the imposed pressure field creates a stationary deformation of the interface – a wake – that spatially vanishes in the far region. The shape of the wake and the way it vanishes depend on both the speed and size of the external source and the properties of the film. The wave resistance, namely the force that has to be externally furnished in order to maintain the wake, is analysed in detail. For finite-size pressure disturbances, it increases with the speed, up to a certain transition value, above which a monotonic decrease occurs. The role of the horizontal extent of the pressure field is studied as well, revealing that for a smaller disturbance the latter transition occurs at a higher speed. Eventually, for a Dirac pressure source, the wave resistance either saturates for a one-dimensional geometry, or diverges for a two-dimensional geometry.

ON BEHAVIORS OF TWO-DIMENSIONAL ENDOMORPHISMS: ROLE OF THE CRITICAL CURVES

1993 ◽  
Vol 03 (01) ◽  
pp. 187-194 ◽  
Author(s):  
CHRISTIAN MIRA ◽  
TONY NARAYANINSAMY
Keyword(s):  
Critical Points ◽  
Two Dimensional ◽  
One Dimensional ◽  
Critical Curves ◽  
Dynamical Properties

Critical curves are the natural two-dimensional extension of the notion of critical points in one-dimensional endomorphisms. They play a fundamental role in determining the dynamical properties and their bifurcations. This letter demonstrates such a role for two new behaviors.

scholarly journals Instrumental resolution as a function of scattering angle and wavelength as exemplified for the POWGEN instrument

2017 ◽  
Vol 50 (3) ◽  
pp. 866-875 ◽  
Author(s):  
Philipp Jacobs ◽  
Andreas Houben ◽  
Werner Schweika ◽  
Andrei L. Tchougréeff ◽  
Richard Dronskowski
Keyword(s):  
Rietveld Refinement ◽  
Time Of Flight ◽  
Two Dimensional ◽  
Peak Shape ◽  
Shape Variation ◽  
Large Area ◽  
Scattering Angle ◽  
One Dimensional ◽  
Diamond Sample ◽  
Instrumental Resolution

The method of angular- and wavelength-dispersive (e.g.two-dimensional) Rietveld refinement is a new and emerging tool for the analysis of neutron diffraction data measured at time-of-flight instruments with large area detectors. Following the approach for one-dimensional refinements (using either scattering angle or time of flight), the first step at each beam time cycle is the calibration of the instrument including the determination of instrumental contributions to the peak shape variation to be expected for diffraction patterns measured by the users. The aim of this work is to provide the users with calibration files and – for the later Rietveld refinement of the measured data – with an instrumental resolution file (IRF). This article will elaborate on the necessary steps to generate such an IRF for the angular- and wavelength-dispersive case, exemplified for the POWGEN instrument. A dataset measured on a standard diamond sample is used to extract the profile function in the two-dimensional case. It is found that the variation of reflection width with 2θ and λ can be expressed by the standard equation used for evaluating the instrumental resolution, which yields a substantially more fundamental approach to the parameterization of the instrumental contribution to the peak shape. Geometrical considerations of the POWGEN instrument and sample effects lead to values for Δθ, Δtand ΔLthat yield a very good match to the extracted FWHM values. In a final step the refinement results are compared with the one-dimensional,i.e.diffraction-focused, case.

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