scholarly journals New beam line for time-of-flight medium energy ion scattering with large area position sensitive detector

2012 ◽  
Vol 83 (9) ◽  
pp. 095107 ◽  
Author(s):  
M. K. Linnarsson ◽  
A. Hallén ◽  
J. Åström ◽  
D. Primetzhofer ◽  
S. Legendre ◽  
...  
Keyword(s):  
Time Of Flight ◽  
Beam Line ◽  
Position Sensitive Detector ◽  
Sensitive Detector ◽  
Medium Energy ◽  
Ion Scattering ◽  
Large Area ◽  
Position Sensitive ◽  
Medium Energy Ion Scattering

Medium-Energy Ion Scattering Analysis with 50 keV He+by the Time-of-Flight Technique

1992 ◽  
Vol 31 (Part 1, No. 12A) ◽  
pp. 4095-4096
Author(s):  
Ichiro Konomi ◽  
Akira Kawano ◽  
Tatsumi Hioki
Keyword(s):  
Time Of Flight ◽  
Medium Energy ◽  
Ion Scattering ◽  
Medium Energy Ion Scattering

Large Area Position Sensitive Detector Based on Amorphous Silicon Technology

1993 ◽  
Vol 297 ◽  
Author(s):  
E. Fortunato ◽  
M. Vieira ◽  
L. Ferreira ◽  
C.N. Carvalho ◽  
G. Lavareda ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Position Sensitive Detector ◽  
Back Side ◽  
Sensitive Detector ◽  
Metal Contacts ◽  
Key Factors ◽  
Large Area ◽  
Position Sensitive

We have developed a rectangular dual-axis large area Position Sensitive Detector (PSD), with 5 cm × 5 cm detection area, based on PIN hydrogenated amorphous silicon (a-Si:H) technology, produced by Plasma Enhanced Chemical Vapor Deposition (PECVD). The metal contacts are located in the four edges of the detected area, two of them located on the back side of the ITO/PIN/A1 structure and the others two located in the front side. The key factors of the detectors resolution and linearity are the thickness uniformity of the different layers, the geometry and the contacts location. Besides that, edge effects on the sensor's corner disturb the linearity of the detector. In this paper we present results concerning the linearity of the detector as well as its optoelectronic characteristics and the role of the i-layer thickness on the final sensor performances.

Identification of donor deactivation centers in heavily As-doped Si using time-of-flight medium-energy ion scattering spectroscopy

2015 ◽  
Vol 118 (13) ◽  
pp. 135706 ◽  
Author(s):  
Won Ja Min ◽  
Kyungsu Park ◽  
Kyu-Sang Yu ◽  
Sungjung Joo ◽  
Yong-Sung Kim ◽  
...  
Keyword(s):  
Time Of Flight ◽  
Medium Energy ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Medium Energy Ion Scattering

New ultra-light flexible large area thin film position sensitive detector based on amorphous silicon

2000 ◽  
Vol 266-269 ◽  
pp. 1213-1217 ◽  
Author(s):  
E. Fortunato ◽  
I. Ferreira ◽  
F. Giuliani ◽  
P. Wurmsdobler ◽  
R. Martins
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Position Sensitive Detector ◽  
Sensitive Detector ◽  
Large Area ◽  
Position Sensitive
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