Temperature Distributions in CW Laser Induced Pyrolytic Deposition

1983 ◽  
Vol 29 ◽  
Author(s):  
Klaus Piglmayer ◽  
Josef Doppelbauer ◽  
Dieter BÄuerle
Keyword(s):  
Experimental Data ◽  
Chemical Vapor Deposition ◽  
Laser Radiation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Numerical Results ◽  
Infinite Plane ◽  
Material Parameters ◽  
Temperature Distributions ◽  
Cw Laser

ABSTRACTTemperature distributions induced by cw laser radiation absorbed on the surface of combined structures, consisting of discs or of stripes on semi - infinite plane substrates, are calculated for different material parameters and different geometries. The relevance of the numerical results is demonstrated by comparison with earlier experimental data obtained in pyrolytic laser-induced chemical vapor deposition.

Metastable nanosized diamond formation from a C-H-O fluid system

2010 ◽  
Vol 25 (12) ◽  
pp. 2336-2340 ◽  
Author(s):  
S.K. Simakov
Keyword(s):  
Experimental Data ◽  
Chemical Vapor Deposition ◽  
Synthesis Gas ◽  
Vapor Deposition ◽  
Present Model ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Diamond Synthesis ◽  
Diamond Formation ◽  
Fluid System

The model of nanosized diamond particles formation at metastable P-T parameters from a C-H-O fluid system is presented. It explains the hydrothermal formation and growth of diamond and the specifics of chemical vapor deposition (CVD) diamond synthesis gas mixtures at low P-T parameters. Further, the model explains the genesis of interstellar nanodiamond formations in space and the genesis of metamorphic microdiamonds in shallow depth Earth rocks. In contrast to models where many possible reactions are considered, the present model makes the simplest possible assumptions about the key processes, and is then able to account for various tendencies seen in experimental data.

scholarly journals Wheel Abrasion Experiment Metals Selection for Mars Pathfinder Mission

1996 ◽  
Vol 458 ◽  
Author(s):  
Aloysius F. Hepp ◽  
Navid S. Fatemi ◽  
David M. Wilt ◽  
Dale C. Ferguson ◽  
Richard W. Hoffman ◽  
...  
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anodized Aluminum ◽  
Selection For ◽  
Mars Pathfinder

ABSTRACTA series of metals was examined for suitability for the Wheel Abrasion Experiment, one of ten microrover experiments of the Mars Pathfinder Mission. The seven candidate metals were: Ag, Al, Au, Cu, Ni, Pt, and W. Thin films of candidate metals from 0.1 to 1.0 micrometer thick were deposited on black anodized aluminum coupons by e-beam and resistive evaporation and chemical vapor deposition. Optical, corrosion, abrasion, and adhesion criteria were used to select Al, Ni, and Pt. A description is given of the deposition and testing of thin films, followed by a presentation of experimental data and a brief discussion of follow-on testing and flight qualification.

Study of Al Incorporation in Chemical Vapor Deposition of p-Doped SiC

2015 ◽  
Vol 821-823 ◽  
pp. 145-148 ◽  
Author(s):  
A.S. Segal ◽  
S.Yu. Karpov ◽  
A.V. Lobanova ◽  
E.V. Yakovlev ◽  
K. Hara ◽  
...  
Keyword(s):  
Experimental Data ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Thermodynamic Model ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Quantitative Agreement ◽  
Competition Mechanism ◽  
Site Competition

Quasi-thermodynamic model of SiC doping with Al in CVD from C3H8, SiH4, and Al (CH3)3 on the Si-face is developed. The model is validated by quantitative agreement of calculated and experimental data on the Al concentration in SiC as a function of temperature, pressure, SiC growth rate, and TMAl flow rate. The model is shown to be consistent with the site competition mechanism of Al incorporation into SiC.

Automatic Reaction Modeling in Chemical Vapor Depositions Using Multiple Process Simulators

2003 ◽  
Vol 804 ◽  
Author(s):  
Takahiro Takahashi ◽  
Kimito Funatsu ◽  
Yoshinori Ema
Keyword(s):  
Experimental Data ◽  
Genetic Algorithms ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Complex Analysis ◽  
Chemical Vapor ◽  
Model Reaction ◽  
Reaction Systems ◽  
Reaction Models ◽  
Multiple Process

ABSTRACTThe identification of appropriate reaction models is very helpful for developing chemical vapor deposition (CVD) processes. In this paper we propose a novel system to analyze experimental data of various CVD reactors and identify reaction models automatically using Genetic Algorithms (GA) with multiple process simulators and modeled functions. We demonstrate that this system is able to adequately model reaction systems, and that complex analysis of various experimental data increased the reliability of the reaction modeling results.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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