Selective Area Chemical Vapor Deposition of Si[sub 1−x]Ge[sub x] Thin Film Alloys by the Alternating Cyclic Method: Experimental Data: II. Morphology and Composition as a Function of Deposition Parameters

2000 ◽  
Vol 147 (5) ◽  
pp. 1854
Author(s):  
R. Soman ◽  
A. Reisman ◽  
D. Temple ◽  
R. Alberti ◽  
C. Pace
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Area ◽  
Deposition Parameters

Investigation of Deposition Parameter Effects on Energy Bandgap of Silicon Thin Film Prepared by Plasma Enhanced Chemical Vapor Deposition via Factorial Experiment

2012 ◽  
Vol 463-464 ◽  
pp. 592-596
Author(s):  
Lei Zhao ◽  
Ben Ding Zhao ◽  
Bao Jun Yan ◽  
Hong Wei Diao ◽  
Wen Jing Wang
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Power ◽  
Silicon Thin Film ◽  
Deposition Parameter ◽  
Deposition Parameters

The energy bandgap (Eg) of silicon thin film prepared by plasma enhanced chemical vapor deposition (PECVD) is greatly dependent on the deposition conditions. Although the influence of some deposition parameters on Eg has been studied individually, it is still not clear which parameter plays the most important role. Here, a 5-factor 5-level factorial experiment was designed and carried out for the deposition parameters: the flow rate of SiH4, the flow rate of H2, the plasma power, the total gas pressure, and the substrate temperature. By making main effect analysis to the influences of such 5 factors on Eg, not only the influence of each deposition parameter was obtained, but also the most critical parameters were selected out. It was found that the gas flow rate of SiH4 and the total gas pressure played the most important roles on determining Eg of silicon thin film. That is to say, in order to obtain an expected Eg for Si thin film prepared by PECVD, much attention should be paid to optimize the two parameters. However, other parameters, including the H2 flow rate, the plasma power and the substrate temperature, can be set as default values according to the experience. Thus, the optimization workload can be reduced greatly.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

scholarly journals Study of deposition parameters and growth kinetics of ZnO deposited by aerosol assisted chemical vapor deposition

RSC Advances ◽  
2021 ◽  
Vol 11 (30) ◽  
pp. 18493-18499
Author(s):  
Sergio Sánchez-Martín ◽  
S. M. Olaizola ◽  
E. Castaño ◽  
E. Urionabarrenetxea ◽  
G. G. Mandayo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Kinetics Analysis ◽  
Deposition Parameters ◽  
Kinetics Of

Impact of deposition parameters, microstructure and growth kinetics analysis of ZnO grown by Aerosol-assisted Chemical Vapor Deposition (AACVD).

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