Particle Size Distribution in a Low Pressure SiH4 :  O 2 : He Chemical Vapor Deposition Reactor: Experimental and Numerical Results

1996 ◽  
Vol 143 (10) ◽  
pp. 3397-3404 ◽  
Author(s):  
Evan Whitby ◽  
Masakazu Hoshino
Keyword(s):  
Particle Size ◽  
Chemical Vapor Deposition ◽  
Particle Size Distribution ◽  
Size Distribution ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Numerical Results ◽  
Chemical Vapor Deposition Reactor

Combinatorial Chemical Vapor Deposition of Metal Silicate Films Using Tri(t -butoxy) silanol and Anhydrous Metal Nitrates

2003 ◽  
Vol 804 ◽  
Author(s):  
Lijuan Zhong ◽  
Fang Chen ◽  
Stephen A. Campbell ◽  
Wayne L. Gladfelter
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Rutherford Backscattering ◽  
Chemical Vapor Deposition Reactor ◽  
Metal Nitrates ◽  
Metal Silicate ◽  
Pressure Chemical

ABSTRACTA modified low-pressure chemical vapor deposition reactor was used to create compositional spreads of MO2/SiO2 films (M = Hf, Zr and Sn) using tri(t-butoxy) silanol and anhydrous metal nitrates of hafnium, zirconium and tin at temperatures below 250 °C. The compositional spreads formed by this process were characterized by ellipsometry and Rutherford backscattering spectrometry. A survey of possible reactions involved in the deposition is included.

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