Properties of Dielectric Thin Films Formed by Laser Evaporation

1983 ◽  
Vol 29 ◽  
Author(s):  
H. Sankur

ABSTRACTThe technique of laser evaporation for the deposition of thin films has been applied to a large class of materials including oxides, fluorides and II-VI semiconductors. The evaporations were performed in high vacuum or under O2 pressures of 10−3 Torr, on several types of substrates, by using CO2 lasers in CW and pulse modes. The thin films thus obtained have been characterized for their structural, optical and electrical properties.Entire ranges of mixtures in several binary systems (e.g., SnO2-SiO2), have been obtained by coevaporation, using mirrors to steer the laser beam among sources.Conditions that affect the stoichiometry and structural properties (laser parameters, background pressure, evaporation rate, substrate temperature) have been established for each material system. Differences in the evaporation behavior of materials under CW and pulsed conditions have been investigated for the case of ZnO. Present and future applications of this technique in the optical devices field are also discussed.

2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage


Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 766
Author(s):  
Tihomir Car ◽  
Ivan Jakovac ◽  
Ivana Šarić ◽  
Sigrid Bernstorff ◽  
Maja Micetic

Structural, optical and electrical properties of Al+MoO3 and Au+MoO3 thin films prepared by simultaneous magnetron sputtering deposition were investigated. The influence of MoO3 sputtering power on the Al and Au nanoparticle formation and spatial distribution was explored. We demonstrated the formation of spatially arranged Au nanoparticles in the MoO3 matrix, while Al incorporates in the MoO3 matrix without nanoparticle formation. The dependence of the Au nanoparticle size and arrangement on the MoO3 sputtering power was established. The Al-based films show a decrease of overall absorption with an Al content increase, while the Au-based films have the opposite trend. The transport properties of the investigated films also are completely different. The resistivity of the Al-based films increases with the Al content, while it decreases with the Au content increase. The reason is a different transport mechanism that occurs in the films due to their different structural properties. The choice of the incorporated material (Al or Au) and its volume percentage in the MoO3 matrix enables the design of materials with desirable optical and electrical characteristics for a variety of applications.


Author(s):  
Daniel A. Fentahun ◽  
Alekha Tyagi ◽  
Sugandha Singh ◽  
Prerna Sinha ◽  
Amodini Mishra ◽  
...  

2021 ◽  
Vol 129 (5) ◽  
pp. 055303
Author(s):  
Jayeeta Biswas ◽  
Geetika Bajaj ◽  
Astha Tyagi ◽  
Prerna Goradia ◽  
Saurabh Lodha

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