Tunable optical and electrical properties of thermal and plasma-enhanced atomic layer deposited Si-rich SixTi1−xO2 thin films

2021 ◽  
Vol 129 (5) ◽  
pp. 055303
Author(s):  
Jayeeta Biswas ◽  
Geetika Bajaj ◽  
Astha Tyagi ◽  
Prerna Goradia ◽  
Saurabh Lodha
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer ◽  
Optical And Electrical Properties

Optical and electrical properties of ZnO nanocrystal thin films passivated by atomic layer deposited Al2O3

2016 ◽  
Vol 22 (4) ◽  
pp. 723-729 ◽  
Author(s):  
Ji-Hyuk Choi ◽  
Jungwoo Kim ◽  
Soong Ju Oh ◽  
Daekyoung Kim ◽  
Yong-Hoon Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer ◽  
Optical And Electrical Properties ◽  
Zno Nanocrystal

scholarly journals Growth Temperature Influence on Atomic-Layer-Deposited In2O3 Thin Films and Their Application in Inorganic Perovskite Solar Cells

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2047
Author(s):  
Umme Farva ◽  
Hyeong Woo Lee ◽  
RiNa Kim ◽  
Dong-Gun Lee ◽  
Jeha Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Solar Cells ◽  
Electrical Properties ◽  
Growth Temperature ◽  
Film Growth ◽  
Perovskite Solar Cells ◽  
Atomic Layer ◽  
Optical And Electrical Properties ◽  
Film Growth Rate

Recently, indium oxide (In2O3) thin films have emerged as a promising electron transport layer (ETL) for perovskite solar cells; however, solution-processed In2O3 ETL suffered from poor morphology, pinholes, and required annealing at high temperatures. This research aims to carry out and prepare pinhole-free, transparent, and highly conductive In2O3 thin films via atomic layer deposition (ALD) seizing efficiently as an ETL. In order to explore the growth-temperature-dependent properties of In2O3 thin film, it was fabricated by ALD using the triethyl indium (Et3In) precursor. The detail of the ALD process at 115–250 °C was studied through the film growth rate, crystal structure, morphology, composition, and optical and electrical properties. The film growth rate increased from 0.009 nm/cycle to 0.088 nm/cycle as the growth temperature rose from 115 °C to 250 °C. The film thickness was highly uniform, and the surface roughness was below 1.6 nm. Our results confirmed that film’s structural, optical and electrical properties directly depend on film growth temperature. Film grown at ≥ 200 °C exhibited a polycrystalline cubic structure with almost negligible carbon impurities. Finally, the device ALD-In2O3 film deposited at 250 °C exhibited a power conversion efficiency of 10.97% superior to other conditions and general SnO2 ETL.

scholarly journals Structural, Optical and Electrical Properties of HfO2 Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2008 ◽  
Author(s):  
Kyoung-Mun Kim ◽  
Jin Sub Jang ◽  
Soon-Gil Yoon ◽  
Ju-Young Yun ◽  
Nak-Kwan Chung
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Smooth Surface ◽  
Optical Band Gap ◽  
Atomic Layer ◽  
Refractive Indices ◽  
Optical And Electrical Properties ◽  
Layer Deposition

HfO2 was deposited at 80–250 °C by plasma-enhanced atomic layer deposition (PEALD), and properties were compared with those obtained by using thermal atomic layer deposition (thermal ALD). The ALD window, i.e., the region where the growth per cycle (GPC) is constant, shifted from high temperatures (150–200 °C) to lower temperatures (80–150 °C) in PEALD. HfO2 deposited at 80 °C by PEALD showed higher density (8.1 g/cm3) than those deposited by thermal ALD (5.3 g/cm3) and a smooth surface (RMS Roughness: 0.2 nm). HfO2 deposited at a low temperature by PEALD showed decreased contaminants compared to thermal ALD deposited HfO2. Values of refractive indices and optical band gap of HfO2 deposited at 80 °C by PEALD (1.9, 5.6 eV) were higher than those obtained by using thermal ALD (1.7, 5.1 eV). Transparency of HfO2 deposited at 80 °C by PEALD on polyethylene terephthalate (PET) was high (> 84%). PET deposited above 80 °C was unable to withstand heat and showed deformation. HfO2 deposited at 80 °C by PEALD showed decreased leakage current from 1.4 × 10−2 to 2.5 × 10−5 A/cm2 and increased capacitance of approximately 21% compared to HfO2 using thermal ALD. Consequently, HfO2 deposited at a low temperature by PEALD showed improved properties compared to HfO2 deposited by thermal ALD.

Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Gamma Radiation ◽  
Glass Substrate ◽  
Gamma Ray ◽  
Optical And Electrical Properties ◽  
Deposition Technique ◽  
Polycrystalline Structure ◽  
Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

scholarly journals Structural, Optical and Electrical Properties of Al+MoO3 and Au+MoO3 Thin Films Prepared by Magnetron Codeposition

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 766
Author(s):  
Tihomir Car ◽  
Ivan Jakovac ◽  
Ivana Šarić ◽  
Sigrid Bernstorff ◽  
Maja Micetic
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Au Nanoparticle ◽  
Content Increase ◽  
Optical And Electrical Properties ◽  
Volume Percentage ◽  
Sputtering Deposition ◽  
Nanoparticle Formation ◽  
Al Content ◽  
Sputtering Power

Structural, optical and electrical properties of Al+MoO3 and Au+MoO3 thin films prepared by simultaneous magnetron sputtering deposition were investigated. The influence of MoO3 sputtering power on the Al and Au nanoparticle formation and spatial distribution was explored. We demonstrated the formation of spatially arranged Au nanoparticles in the MoO3 matrix, while Al incorporates in the MoO3 matrix without nanoparticle formation. The dependence of the Au nanoparticle size and arrangement on the MoO3 sputtering power was established. The Al-based films show a decrease of overall absorption with an Al content increase, while the Au-based films have the opposite trend. The transport properties of the investigated films also are completely different. The resistivity of the Al-based films increases with the Al content, while it decreases with the Au content increase. The reason is a different transport mechanism that occurs in the films due to their different structural properties. The choice of the incorporated material (Al or Au) and its volume percentage in the MoO3 matrix enables the design of materials with desirable optical and electrical characteristics for a variety of applications.

Tunable optical and electrical properties of p-type Cu2O thin films

2021 ◽  
Author(s):  
Daniel A. Fentahun ◽  
Alekha Tyagi ◽  
Sugandha Singh ◽  
Prerna Sinha ◽  
Amodini Mishra ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Cu2o Thin Films ◽  
P Type
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