Electrical Properties of Ferroelectric Thin Film Capacitors with Different Structures

1992 ◽  
Vol 284 ◽  
Author(s):  
Q. X. Jia ◽  
J. Yi ◽  
Z. Q. Shi ◽  
K. K. Ho ◽  
L. H. Chang ◽  
...  

ABSTRACTFerroelectric BaTiO3 thin film capacitors were fabricated using different designs. Silicon wafers with an oxide layer were used as the substrates. Conductive metallic oxide of RuO2 was reactively sputtered on SiO2/Si as a bottom electrode. The BaTiO3 thin films with a thickness in the range of 150–300nm were deposited by RF magnetron sputtering. Different capacitor structures, including single layer amorphous, single layer polycrys-talline, and bi-layer amorphous on polycrystalline, were investigated in this study. The clear interface between BaTiO3 and RuO2 as demonstrated by cross-sectional scanning electron microscopy implies little interdiffusion. The DC conducticity of a film with a thickness of around 200nm was as low as 1×10−13OHgr-cm at 4V. The dielectric constant of the composite structure was controlled in a range from 30 to 130. Breakdown voltage varied from 5×105V/cm to 1×106V/cm.

1997 ◽  
Vol 473 ◽  
Author(s):  
H. S. Yang ◽  
F. R. Brotzen ◽  
D. L. Callahan ◽  
C. F. Dunn

ABSTRACTQuantitative measurement of the adhesion strength of thin film metallizations has been achieved by a novel technique employing electrostatic forces to generate delaminating stresses. This technique has been used in testing the adhesion of Al-Cu, Cu, and Al multilayer films deposited on Si. Micro-blister-type failure is revealed by scanning electron microscopy. The delamination process and the geometry of the blister are discussed. The measured adhesion data fit a Weibull distribution function.


Author(s):  
Ihab Nabeel Safi ◽  
Basima Mohammed Ali Hussein ◽  
Hikmat J. Aljudy ◽  
Mustafa S. Tukmachi

Abstract Objectives Dental implant is a revolution in dentistry; some shortages are still a focus of research. This study use long duration of radiofrequency (RF)–magnetron sputtering to coat titanium (Ti) implant with hydroxyapatite (HA) to obtain a uniform, strongly adhered in a few micrometers in thickness. Materials and Methods Two types of substrates: discs and root form cylinders were prepared using a grade 1 commercially pure (CP) Ti rod. A RF–magnetron sputtering device was used to coat specimens with HA. Magnetron sputtering was set at 150 W for 22 hours at 100°C under continuous argon gas flow and substrate rotation at 10 rpm. Coat properties were evaluated via field emission scanning electron microscopy (FESEM), scanning electron microscopy–energy dispersive X-ray (EDX) analysis, atomic force microscopy, and Vickers hardness (VH). Student’s t-test was used. Results All FESEM images showed a homogeneous, continuous, and crack-free HA coat with a rough surface. EDX analysis revealed inclusion of HA particles within the substrate surface in a calcium (Ca)/phosphorus (P) ratio (16.58/11.31) close to that of HA. Elemental and EDX analyses showed Ca, Ti, P, and oxygen within Ti. The FESEM views at a cross-section of the substrate showed an average of 7 µm coat thickness. Moreover, these images revealed a dense, compact, and uniform continuous adhesion between the coat layer and the substrate. Roughness result indicated highly significant difference between uncoated Ti and HA coat (p-value < 0.05). A significant improvement in the VH value was observed when coat hardness was compared with the Ti substrate hardness (p-value < 0.05). Conclusion Prolonged magnetron sputtering successfully coat Ti dental implants with HA in micrometers thickness which is well adhered essentially in excellent osseointegration.


2001 ◽  
Vol 707 ◽  
Author(s):  
Ian C. Bache ◽  
Catherine M. Ramsdale ◽  
D. Steve Thomas ◽  
Ana-Claudia Arias ◽  
J. Devin MacKenzie ◽  
...  

ABSTRACTCharacterising the morphology of thin films for use in device applications requires the ability to study both the structure within the plane of the film, and also through its thickness. Environmental scanning electron microscopy has proved to be a fruitful technique for the study of such films both because contrast can be seen within the film without the need for staining (as is conventionally done for electron microscopy), and because cross-sectional images can be obtained without charging artefacts. The application of ESEM to a particular blend of relevance to photovoltaics is described.


2019 ◽  
Vol 16 (1) ◽  
pp. 65
Author(s):  
Rahmi Dewi ◽  
Tiara Pertiwi ◽  
Krisman Krisman

The thin film of Barium Strontium Titanate (BST) has been studied withcomposition ofby using sol-gel method that annealed in temperature of 600oC and 650oC. The thin film of BST is characterized by using Field Emission Scanning Electron Microscopy (FESEM) and an impedance spectroscopy. The results of  FESEM characterization for samples in temperature of 600oC and 650oC are 55.83 nm and 84.88 nm in thickness respectively. The result of impedance spectroscopy characterization given frequency values obtained by the impedance value of real and imaginary.The capacitance value at a frequency of 20 Hz from a thin film of BST in temperature of 600oC and 650oC are 69.36Fand138.70F. The dielectric constant of the thin film of BST in temperature of 600oC and 650oC are 22.17 dan 131.56 respectively.


2013 ◽  
Vol 832 ◽  
pp. 128-131
Author(s):  
Sharipah Nadzirah ◽  
Uda Hashim

Titania or titanium dioxide (TiO2) thin film has been synthesized via sol-gel method with monoethanolamine (MEA) as a catalyst. The mixing of titanium butoxide as a precursor, ethanol as a solvent and MEA were stirred using magnetic stirrer under ambient temperature [. The TiO2solution prepared then was deposited on SiO2substrates using spin-coater and the coated films were annealed at 600°C. Finally, both before and after annealed TiO2thin films were characterized using Field Emission Scanning Electron Microscopy (FESEM). The obtained results show the different TiO2particles formation before and after annealed.


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