Effects of Diluted-Hydrogen and Hydrogen-Atom-Treatment on the Silicon-Hydrogen Bonding Configurations of Hydrogenated Silicon Films

1992 ◽  
Vol 283 ◽  
Author(s):  
K. C. Hsu ◽  
H. Chang ◽  
H. L. Hwang

ABSTRACTThe silicon—hydrogen bonding configuration studies of hydrogenated silicon films that were fabricated by diluted—hydrogen and hydrogen—atom—treatment methods are presented. The diluted—hydrogen samples tend to show a very sharp line—shape in the NMR spectra as the H2/SiH4 dilution ratio is increased and/or temperature is elevated. The addition of atomic hydrogen treatment can produce the same NMR spectra at a temperature lower than 200°C. The Raman scattering spectra show that the μc—Si phase can be formed by the atomic hydrogen treatment. The infrared absorption spectra also indicate an increase of SiH2 bonding configuration and a hydrogen content reduction when atomic hydrogen treatment is employed. These results suggest that the degree of crystallinity of hydrogenated silicon films can be systematically adjusted.

1993 ◽  
Vol 297 ◽  
Author(s):  
K.C. Hsu ◽  
H.L. Hwang

Effective bandgap modifications of hydrogenated silicon are demonstrated in this work. These films were obtained by (combined) hydrogen dilution and atomic hydrogen treatments during the deposition. The Si—H bonding configurations were characterized by NMR measurements. The hydrogen dilution tends to create a very sharp line-shape in the NMR spectra as the dilution ratio is increased and the addition of atomic hydrogen treatment can produce the same NMR spectra even at a lower temperature. The optical bandgap of these Si:H samples showed the same tendency that the bandgap narrowed as both the dilution ratio was increased and the addition of atomic hydrogen treatment.


1992 ◽  
Vol 258 ◽  
Author(s):  
K. C. Hsu ◽  
H. Chang ◽  
C. S. Hong ◽  
H. L. Hwang

ABSTRACTIt was found that hydrogen dilution in the SiH4/H2 mixture tend to show a sharp line-shape in the NMR spectra as the substrate temperature is higher than 300 °C. The hydrogen-atom-treatment method also produces the same effect at a lower substrate temperature about 250°C. The Raman scattering spectra show that the hydrogen-atom-treatment creates the microcrystalline structure at a temperature higher than 250°C while hydrogen dilution produces mixed phases containing amorphous phase and a small quantity of micro-crystalline phase. Together with the optical bandgap narrowing, the increase of the dark conductivity and the reduction of photo-to-dark conductivity ratio, these samples indicate that with more hydrogen incorporation during deposition and plasma hydrogen treatment, these films possess a much compact structure, and the degree of crystallinity of hydrogenated silicon film was found to be systematically changed.


1984 ◽  
Vol 39 (2) ◽  
pp. 207-212 ◽  
Author(s):  
Karl Dimroth ◽  
Rüdiger Thamm ◽  
Hans Kaletsch

New 6π-tricarbonylchromiumpyrnftne complexes 5c and 5d could be synthesized from 2,6-di-rbutyl- and 2,4,6-tri-f-butylpyridines (3c and 3d) with chromium hexacarbonyl. They are characterized by their 1H and 13C NMR Spectra and their CO-frequencies which are rather similar to those of 6π-tricarbonylchromium-2,4 ,6-triphenyl [1] or 2,4,6-trw-butyl- [2] λ3-phosphorins. When 5d is reacted with lithiumphenyl, the phenyl residue adds to C-4, giving probably compound 7, which by methanolysis and allyl rearrangement of the hydrogen atom from position 4 to position 2 affords tricarbonylchromium-2,6-di-f-butyl-4-phenyl-1,2-dihydropyridine (8) in 56% yield. The 6π-tricarbonylchromium complexes of 2,4,6-triphenyl- or 2,4,6-tn-t-butyl-λ3-phosphorins react with lithiumorganic compounds by addition only to the phosphorus atom whose reaction with methyliodide lead to tricarbonylchromium-λ5-phosphorin-ylid complexes [2], 5 d is a well crystallized compound, the X-ray analysis of the first 6π-tricarbonylchromium pyridine derivate could be performed [3] and compared with the results of the X-ray analysis of 6π-tricarbonylchromiumx 2,4,6-triphenyl-λ3-phosphorin [4]


2013 ◽  
Vol 541 ◽  
pp. 12-16 ◽  
Author(s):  
Daniel Franta ◽  
David Nečas ◽  
Lenka Zajíčková ◽  
Ivan Ohlídal ◽  
Jiří Stuchlík

1986 ◽  
Vol 25 (Part 1, No. 6) ◽  
pp. 775-778 ◽  
Author(s):  
Hideki Shimizu ◽  
Satoshi Mizuno ◽  
Mikio Noda

2006 ◽  
Vol 55 (4) ◽  
pp. 1936
Author(s):  
Yu Wei ◽  
Zhang Li ◽  
Wang Bao-Zhu ◽  
Lu Wan-Bing ◽  
Wang Li-Wei ◽  
...  

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