Investigation of carrier transport mechanisms in the Cu–Zn–Se based hetero-structure grown by sputtering technique

2018 ◽  
Vol 96 (7) ◽  
pp. 816-825 ◽  
Author(s):  
H.H. Güllü ◽  
M. Terlemezoğlu ◽  
Ö. Bayraklı ◽  
D.E. Yıldız ◽  
M. Parlak
Keyword(s):  
Barrier Height ◽  
Carrier Transport ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Band Gap Energy ◽  
Zero Bias ◽  
Hetero Structure ◽  
Current Voltage ◽  
P Type

In this paper, we present results of the electrical characterization of n-Si/p-Cu–Zn–Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current–voltage measurements in the temperature range of 220–360 K, room temperature, and frequency-dependent capacitance–voltage and conductance-voltage measurements. The anomaly in current–voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm−2K−2 by means of modified Richardson plot.

Electrical Characterization of In Schottky Contacts to Epitaxial n-In0.46Ga0.54P Grown on n+-GaAs by Mocvd

1996 ◽  
Vol 448 ◽  
Author(s):  
N. Marcano ◽  
A. Singh
Keyword(s):  
Barrier Height ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Interface Layer ◽  
Zero Bias ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Direct Current Voltage ◽  
Etched Surface

AbstractIn/n-In0.46Ga0.54P Schottky diode was fabricated by thermal evaporation of In on chemically etched surface of In0.45Ga0.54P:Si epitaxial layer grown on highly doped n type GaAs. The In metal formed a high quality rectifying contact to In0.46Ga0.54P:Si with a rectification ratio of 500. The direct current-voltage/temperature (I-V/T) characteristics were non-ideal with the values of the ideality factor (n) between 1.26-1.78 for 400>T>260 K. The forward I-V data strongly indicated that the current was controlled by the generation-recombination (GR) and thermionic emission (TE) mechanisms for temperature in the range 260-400 K. From the temperature variation of the TE reverse saturation current, the values of (0.75±0.05)V and the (4.5±0.5)×10-5 Acm-2K-2 for the zero bias zero temperature barrier height (φoo) and modified effective Richardson constant were obtained. The 1 MHz capacitance-voltage (C-V) data for 260 K < T < 400 K was analyzed in terms of the C-2-V relation including the effect of interface layer to obtain more realistic values of the barrier height (φbo). The temperature dependence of φbo was described the relation φbo =(0.86±10.03) - (8.4±0.7)×l0-4T. The values of φoo, obtained by the I-V and C-V techniques agreed well.

Temperature Dependent Current-Voltage Characteristics of n-Type Nanocrystalline-FeSi2/p-Type Si Heterojunctions Fabricated by Pulsed Laser Deposition

2013 ◽  
Vol 858 ◽  
pp. 171-176
Author(s):  
Nathaporn Promros ◽  
Ryūhei Iwasaki ◽  
Suguru Funasaki ◽  
Kyohei Yamashita ◽  
Chen Li ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Carrier Transport ◽  
Series Resistance ◽  
Thermionic Emission ◽  
Temperature Dependent ◽  
Zero Bias ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

n-Type NC-FeSi2/p-type Si heterojunctions were successfully fabricated by PLD, and their forward current-voltage characteristics were analyzed on the basis of thermionic emission theory (TE) in the temperature range from 300 down to 77 K. With a decrease in the temperature, the ideality factor was increased while the zero-bias barrier height was decreased. The calculated values of ideality factor and barrier height were 3.07 and 0.63 eV at 300 K and 10.75 and 0.23 eV at 77 K. The large value of ideality factor indicated that a tunneling process contributes to the carrier transport mechanisms in the NC-FeSi2 films. The series resistance, which was estimated by Cheungs method, was strongly dependent on temperature. At 300 K, the value of series resistance was 12.44 Ω and it was dramatically enhanced to be 1.71× 105 Ω at 77 K.

Temperature dependant electrical properties of formyl-TIPPCu(II)/p-Si heterojunction diode

2014 ◽  
Vol 28 (13) ◽  
pp. 1450100
Author(s):  
Dil Nawaz Khan ◽  
Muhammad Hassan Sayyad ◽  
Fazal Wahab ◽  
Muhammad Tahir ◽  
Muhammad Yaseen ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Series Resistance ◽  
Electrical Characterization ◽  
Heterojunction Diode ◽  
Zero Bias ◽  
Current Voltage ◽  
Temperature Dependant ◽  
Increasing Temperature ◽  
P Type

This paper reports the temperature dependent electrical characterization of formyl- TIPPCu (II)/p- Si heterojunction diode which was fabricated by growing thin films of formyl- TIPPCu (II) on the p-type silicon substrate by thermal sublimation technique. The variation in electrical characteristics of the fabricated devices has been systematically investigated as the function of temperature by using current–voltage (I–V) measurements in the temperature range 299–339 K. The diode parameters like ideality factor, zero bias barrier height and parasitic series resistance have been found to be strongly temperature dependant. The zero bias barrier height increases while ideality factor and series resistance decreases with increasing temperature.

The Electrical Characterization of p-CdTe/n-Si (111) Heterojunction Diode

2013 ◽  
Vol 702 ◽  
pp. 236-241 ◽  
Author(s):  
Mohammed A. Razooqi ◽  
Ameer F. Abdulameer ◽  
Adwan N. Hameed ◽  
Rasha A. Abdullaha ◽  
Ehsan I. Sabbar
Keyword(s):  
Carrier Transport ◽  
Electrical Characterization ◽  
Depletion Region ◽  
Cdte Film ◽  
Voltage Measurement ◽  
Zero Bias ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Tunneling Recombination ◽  
Evaporation Technique

p-CdTe film has been deposited on n-Si(111) substrate by thermal evaporation technique. The prepared CdTe/Si heterojunction diodes have been annealed at 573K. The capacitance-voltage measurements have studied for the prepared heterojunctions under 2 KHz frequencies. The capacitance-voltage measurement indicated that these diodes are abrupt. The capacitance at zero bias, the built in voltage and the doping concentration increased after annealing process while the zero bias depletion region width is decreased. The carrier transport mechanism for CdTe/Si diodes in dark is tunneling-recombination. From current-voltage measurement at dark, the values of ideality factor are 2.9 and 3.8. The values of reverse saturation current are 3.77×10-7and 9.36×10-8Amperes.

scholarly journals Barrier Modification by Methyl Violet Organic Dye Molecules of Ag/P-Inp Structures

2016 ◽  
Vol 2 (3) ◽  
pp. 7 ◽  
Author(s):  
Ömer Güllü
Keyword(s):  
Barrier Height ◽  
Methyl Violet ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Mis Structure ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Mis Diode

This work includes fabrication and electrical characterization of Metal/Interlayer/Semiconductor (MIS) structures with methyl violet organic film on p-InP wafer. Metal(Ag)/ Interlayer (methyl violet =MV)/Semiconductor(p-InP) MIS structure presents a rectifying contact behavior. The values of ideality factor (n) and barrier height (BH) for the Ag/MV/p-InP MIS diode by using the current-voltage (I-V) measurement have been extracted as 1.21 and 0.84 eV, respectively. It was seen that the BH value of 0.84 eV calculated for the Ag/MV/p-InP MIS structure was significantly higher than the value of 0.64 eV of Ag/p-InP control contact. This situation was ascribed to the fact that the MV organic interlayer increased the effective barrier height by influencing the space charge region of inorganic semiconductor. The values of diffusion potential and barrier height for the Ag/MV/p-InP MIS diode by using the capacitance-voltage (C-V) measurement have been extracted as 1.21 V and 0.84 eV, respectively. The interface-state density of the Ag/MV/p-InP structure was seen to change from 2.57×1013 eV-1cm-2 to 2.19×1012 eV-1cm-2.

Preparation and Characterization of N-CdS Thin Films and its Schottky Barrier

2013 ◽  
Vol 665 ◽  
pp. 307-310
Author(s):  
K.D. Patel ◽  
Keyur S. Hingarajiya ◽  
Mayur M. Patel ◽  
V.M. Pathak ◽  
R. Srivastava
Keyword(s):  
Thin Films ◽  
Barrier Height ◽  
Thermionic Emission ◽  
Cadmium Sulphide ◽  
Optical Characterization ◽  
Point Of View ◽  
Flat Band ◽  
Zero Bias ◽  
Cds Thin Films

Cadmium sulphide (CdS), a member of group II-VI semiconductors is one of the promising materials from its applications point of view. The present investigations are about the preparation, structural and optical characterization of CdS thin films and their use as Schottky diode with Aluminum. Thin films of CdS having thickness around 700nm have been deposited by thermal evaporation. The chemical composition of the deposited CdS thin films has been made using EDAX technique. The structural characterization of this films was carried out using XRD. The structure of CdS after the deposition was found to be Cubic. Also, the lattice parameters were evaluated from the XRD data. From TEM of CdS thin films, the polycrystalline nature was confirmed. Optical characterization has been carried out using UV-VIS-IR spectroscopy. The direct as well as indirect band gaps obtained are 1.64eV and 1.48eV respectively. Schottky junctions were formed by a thermal vapor-deposition of 500nm Al films on pre-coated CdS glass substrates. Diode parameters, such as the zero bias barrier height φb0, the flat band barrier height φbf and the ideality factorη, were calculated using thermionic emission theory at room temperature.

Electrical Characterization of Laser-Irradiated 4H-SiC Wafer

2002 ◽  
Vol 719 ◽  
Author(s):  
I. Salama ◽  
N. R Quick ◽  
A. Kar ◽  
Gilyong Chung
Keyword(s):  
Electronic Properties ◽  
Electrical Characterization ◽  
Electric Resistance ◽  
Current Voltage ◽  
Impurity Doping ◽  
Current Voltage Characteristics ◽  
P Type ◽  
Sic Wafer ◽  
Conventional Annealing

AbstractHighly conductive tracks are generated in low-doped epilayers on 4H-SiC wafers using a laserdirect write technique. The current-voltage characteristics are measured to study the effect of the applied voltage on the electric resistance and the surface contact of the irradiated tracks. The effect of multiple irradiations on the electronic properties of the fabricated tracks was investigated and compared with the effect of the conventional annealing process. A laser doping process was used to achieve n-type as well as p-type impurity doping in the substrate. The electronic properties of the doped tracks are measured and compared with those of the untreated wafers. Microstructural observation and surface analysis of the irradiated tracks are studied. Laser fabrication of rectifying contact on SiC substrates is demonstrated.

Electrical Characteristics of n-Type Nanocrystalline FeSi2/Intrinsic Si/p-Type Si Heterojunctions Prepared by Facing-Targets Direct-Current Sputtering

2013 ◽  
Vol 446-447 ◽  
pp. 88-92
Author(s):  
Nathaporn Promros ◽  
Suguru Funasaki ◽  
Ryūhei Iwasaki ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Low Temperatures ◽  
Series Resistance ◽  
Linear Part ◽  
Thermionic Emission ◽  
Straight Line ◽  
Current Voltage ◽  
P Type ◽  
Direct Current Sputtering

n-Type nanocrystalline FeSi2/intrinsic Si/p-type Si heterojunctions were prepared by FTDCS. In order to estimate their diode parameters such as ideality factor, barrier height and series resistance, their current-voltage characteristics were measured in the temperature range from 300 to 77 K and analyzed on the basis of thermionic emission theory and Cheungs method. Based on thermionic emission theory, the ideality factor was calculated from the slope of the linear part from the forward lnJ-V characteristics. The barrier height was calculated once the saturation current density was derived from the straight line intercept of lnJ-V plot at a zero voltage. The obtained results exhibit an increase of ideality factor and a decrease of barrier height at low temperatures, which might be owing to inhomogeneity of material and non-uniformity of charge at the interface. Based on Cheungs method, the ideality factor and barrier height were estimated from y-axis intercept of dV/d (lnJ)J plot and y-axis intercept of H(J)J plot, respectively. The series resistance was analyzed from the slopes of dV/d (lnJ)J and H(J)J plots. The values of ideality factor and barrier height obtained from this method are in agreement with those obtained from the thermionic emission theory. The obtained series resistances from dV/d (lnJ)J and H(J)J plots, which were approximately equal to each others, were increased as the temperature decreased. This result should be owing to the increased ideality factor and remarkably reduced carrier concentrations at low temperatures.

scholarly journals Ferromagnetic Schottky Contact for GaN Based Spin Devices

2021 ◽  
Vol 12 ◽  
pp. 55-60
Author(s):  
Tarkeshwar C. Patil
Keyword(s):  
Barrier Height ◽  
Spin Injection ◽  
Schottky Contact ◽  
Electrical Characterization ◽  
Schottky Contacts ◽  
Zero Bias ◽  
Spin Devices

In this paper, ferromagnetic Schottky contacts for GaN based spin injection are being studied. The electrical characterization of this Co/n-GaN and Fe/n-GaN Schottky contacts showing the zero-bias barrier height comes closer to unity as the temperature is increased. Also, the Richardson constant is extracted for this Schottky contact. Both the zero-bias barrier height and the Richardson constant are verified both experimentally as well as theoretically. Thus, this Schottky contacts will serve as spin injector for GaN based spin devices specifically for GaCrN based devices

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