Electronic Structure of GaAs/GaInP Strained Layer Quantum Wells

1992 ◽  
Vol 281 ◽  
Author(s):  
K. Rerbal ◽  
K. Zitouni ◽  
A. Kadri
Keyword(s):  
Electronic Structure ◽  
Quantum Wells ◽  
Valence Band ◽  
Satisfactory Agreement ◽  
Lattice Mismatch ◽  
Envelope Function ◽  
Function Approach ◽  
Band Offset ◽  
Valence Band Offset ◽  
Strained Layer

ABSTRACTThis work reports on the calculations of the electronic structure of GaAs/GaxIn1−x P strained layer quantum wells. The calculations are based on the multiband envelope function approach, considering the valence band offset value that has been recently proposed. The effect of strain due to the lattice-mismatch is studied. The calculated results are compared with the data obtained from photoreflectance measurements. Satisfactory agreement is obtained.

Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy

1992 ◽  
Vol 46 (3) ◽  
pp. 1886-1888 ◽  
Author(s):  
Gérald Arnaud ◽  
Philippe Boring ◽  
Bernard Gil ◽  
Jean-Charles Garcia ◽  
Jean-Pierre Landesman ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Photoreflectance Spectroscopy

High valence‐band offset of GaSbAs‐InAlAs quantum wells grown by molecular beam epitaxy

1992 ◽  
Vol 61 (19) ◽  
pp. 2317-2319 ◽  
Author(s):  
P. W. Yu ◽  
D. C. Reynolds ◽  
B. Jogai ◽  
J. Loehr ◽  
C. E. Stutz
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Valence Band ◽  
Molecular Beam ◽  
Band Offset ◽  
Valence Band Offset ◽  
High Valence Band

Exciton binding energies and the valence-band offset in mixed type-I–type-II strained-layer superlattices

1992 ◽  
Vol 46 (3) ◽  
pp. 1557-1563 ◽  
Author(s):  
P. Peyla ◽  
Y. Merle d’Aubigné ◽  
A. Wasiela ◽  
R. Romestain ◽  
H. Mariette ◽  
...  
Keyword(s):  
Valence Band ◽  
Mixed Type ◽  
Binding Energies ◽  
Band Offset ◽  
Type I ◽  
Type Ii ◽  
Valence Band Offset ◽  
Strained Layer ◽  
Strained Layer Superlattices

INSIGHTS ON THE BOUND STATES IN THE STRAINED CdSe–ZnSe SINGLE-QUANTUM WELLS

2008 ◽  
Vol 22 (13) ◽  
pp. 2055-2069 ◽  
Author(s):  
NACIR TIT ◽  
IHAB M. OBAIDAT
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Quantum Confinement ◽  
Bound States ◽  
Axial Strain ◽  
Bound State ◽  
Band Offset ◽  
Single Quantum ◽  
Valence Band Offset ◽  
Single Quantum Well

The bound states in the (CdSe) Nw– ZnSe (001) single quantum well are investigated versus the well width (Nw monolayers) and the valence-band offset (VBO). The calculation, based on the sp3s* tight-binding method which includes the spin-orbit interactions, is employed to calculate the band-gap energy (Eg), quantum-confinement energy (EQ), and band structures. It is found that the studied systems possess a vanishing valence-band offset ( VBO ≃ 0) in consistency with the common-anion rule, and a large conduction band offset of about ( CBO ≃ 1 eV ); both of which made the electronic confinement become predominant. The bi-axial strain, on the other hand, remains to control the hole states. Namely, the two highest (spin-degenerate) hole states are found to localize at the two interfaces due to the formation of two similar strain-induced potential dips at these interfaces, each of depth equal to the strain energy ~35 meV. More importantly, the ultrathin CdSe wells (with Nw ≤ 4 monolayers) are found to contain only a single (spin-degenerate) bound state; but by increasing the well width further, a new (spin-degenerate) bound state falls into the well every time Nw hits a multiple of 4 monolayers (more specifically, for 4n+1 ≤ Nw ≤ 4 (n+1), the number of bound states is (n+1), where n is an integer). The rule governing the variation of the quantum-confinement energy EQ versus the well width Nw has been derived. Our theoretical results are in excellent agreement with the available experimental photoluminescence data.

Large valence-band offset in strained-layerInxGa1−xAs-GaAs quantum wells

1987 ◽  
Vol 36 (15) ◽  
pp. 8165-8168 ◽  
Author(s):  
J. Menéndez ◽  
A. Pinczuk ◽  
D. J. Werder ◽  
S. K. Sputz ◽  
R. C. Miller ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset

Electron and Hole Confinement in GaInN/GaN and AlGaN/GaN Quantum Wells

2001 ◽  
Vol 693 ◽  
Author(s):  
A. Hangleiter ◽  
S. Lahmann ◽  
C. Netzel ◽  
U. Rossow ◽  
P. R. C. Kent ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Conduction Band ◽  
Band Offset ◽  
Valence Band Edge ◽  
Valence Band Offset ◽  
Time Resolved ◽  
Conduction Band Offset ◽  
Hole Confinement ◽  
Weak Electron

AbstractWe show that the strong bowing of the bandgap of GaInN, which is primarily due to bowing of the valence band edge, translates into a strongly composition dependent ratio of the conduction band offset to the valence band offset with respect to GaN. For common In mole fractions of 0-20 % this leads to a reversal of the band offset ratio and to very weak electron con nement. This theoretical picture is veri ed by comparing results of time-resolved spectroscopy on asymmetric AlGaN/GaInN/GaN and AlGaN/GaN/AlGaN quantum wells. Since electron con nement is much stronger for GaN/AlGaN wells than for GaInN/GaN wells, the effect of asymmetry is very weak for the former and fairly strong for the latter.

Quantum wells with zero valence-band offset: Drastic enhancement of forbidden excitonic transitions

1996 ◽  
Vol 54 (16) ◽  
pp. R11078-R11081 ◽  
Author(s):  
A. V. Kavokin ◽  
M. A. Kaliteevski ◽  
S. V. Goupalov ◽  
J. D. Berger ◽  
O. Lyngnes ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Excitonic Transitions

Valence band offset in semimagnetic CdTe/(CdMn)To quantum wells

1994 ◽  
Vol 15 (4) ◽  
pp. 503-508 ◽  
Author(s):  
W. Ossau ◽  
B. Kuhn-Heinrich ◽  
A. Waag ◽  
T. Litz ◽  
G. Landwehr
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset
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