Exciton binding energies and the valence-band offset in mixed type-I–type-II strained-layer superlattices

1992 ◽  
Vol 46 (3) ◽  
pp. 1557-1563 ◽  
Author(s):  
P. Peyla ◽  
Y. Merle d’Aubigné ◽  
A. Wasiela ◽  
R. Romestain ◽  
H. Mariette ◽  
...  
Keyword(s):  
Valence Band ◽  
Mixed Type ◽  
Binding Energies ◽  
Band Offset ◽  
Type I ◽  
Type Ii ◽  
Valence Band Offset ◽  
Strained Layer ◽  
Strained Layer Superlattices

Optical Investigation of the Band Offset of CdxZn1−xTe /ZnTe and ZnSexTe1−x/ZnTe Superlattices

1990 ◽  
Vol 198 ◽  
Author(s):  
Y. Rajakarunanayake ◽  
M. C. Phillips ◽  
J. O. Mccaldin ◽  
D. H. Chow ◽  
D. A. Collins ◽  
...  
Keyword(s):  
Valence Band ◽  
Band Alignment ◽  
Band Offset ◽  
Type I ◽  
Optical Investigation ◽  
Type Ii ◽  
Carrier Injection ◽  
Valence Band Offset ◽  
Small Component ◽  
Strained Layer Superlattices

ABSTRACTWe have analyzed photoluminescence spectra from CdxZnl−xTe /ZnTe and ZnSexTel−x/ZnTe strained layer superlattices grown by MBE, and obtained the band offsets by fitting to theory. We find that the valence band offset of the CdTe/ZnTe system is quite small (-50± 160 meV). In CdxZnl−xTe /ZnTe superlattices, the electrons and heavy holes are confined in the CdxZn1−xTe layers (type I), while the light holes are confined in the ZnTe layers (type II). On the other hand, the photoluminescence data from the ZnSexTe1−x /ZnTe superlattices suggest that the band alignment is type II, with a large valence band offset (−907 ± 120 meV). We also investigated the band bowing in the ZnSexTel−x alloys by optical spectroscopy, and found that there is only a small component of bowing in the valence band, while most of the bowing occurs in the conduction band. Based on our results for band alignments, we evaluate the prospects for minority carrier injection in wide bandgap heterostructures based on ZnSe, ZnTe, and CdTe.

Type I and type II stark ladder structure in Ga1−xInxAs  GaAs (x = 0.14) strained layer superlattices

1991 ◽  
Vol 10 (3) ◽  
pp. 295-299 ◽  
Author(s):  
M.K. Saker ◽  
D.M. Whittaker ◽  
M.S. Skolnick ◽  
M.T. Emeny ◽  
C.R. Whitehouse
Keyword(s):  
Type I ◽  
Type Ii ◽  
Ladder Structure ◽  
Strained Layer ◽  
Strained Layer Superlattices

Theory of Interfaces in Wide-Gap Nitrides

1996 ◽  
Vol 449 ◽  
Author(s):  
M. Buongiorno Nardelli ◽  
K. Rapcewicz ◽  
E. L. Briggs ◽  
C. Bungaro ◽  
J. Bernholc
Keyword(s):  
Laser Diodes ◽  
Blue Laser ◽  
Band Offset ◽  
Type I ◽  
Interface Properties ◽  
Type Ii ◽  
Valence Band Offset ◽  
Bulk Properties ◽  
Conduction Band Offset ◽  
Zinc Blende

ABSTRACTThe results of theoretical studies of the bulk and interface properties of nitrides are presented. As a test the bulk properties, including phonons of GaN at the Γ-point, are calculated and found to be in excellent agreement with the experimental data. At interfaces, the strain effects on the band offsets range from 20% to 40%, depending on the substrate. The AlN/GaN/InN interfaces are all of type I, while the Al0.5Ga0.5N on A1N zinc-blende (001) interface is of type II. Further, an interface similar to those used in the recent blue laser diodes is of type I and does not have any electronically active interface states. The valence band-offset in the (0001) GaN on A1N interface is -0.57 eV and the conduction band-offset is 1.87 eV.

Photoluminescence Study of Type I and Type II GaAs/GaP Strained-Layer Superlattices Grown on GaAs Substrates

1989 ◽  
Vol 28 (Part 2, No. 9) ◽  
pp. L1495-L1498 ◽  
Author(s):  
Gaspar Armelles ◽  
Miguel Recio ◽  
Juan Meléndez ◽  
Ana Ruiz ◽  
Fernando Briones ◽  
...  
Keyword(s):  
Type I ◽  
Type Ii ◽  
Photoluminescence Study ◽  
Strained Layer ◽  
Gaas Substrates ◽  
Strained Layer Superlattices

Conduction- and Valence-Band Energies in Bulk InAs1−x Sb x and Type II InAs1−x Sb x /InAs Strained-Layer Superlattices

2013 ◽  
Vol 42 (5) ◽  
pp. 918-926 ◽  
Author(s):  
Youxi Lin ◽  
Ding Wang ◽  
Dmitry Donetsky ◽  
Leon Shterengas ◽  
Gela Kipshidze ◽  
...  
Keyword(s):  
Valence Band ◽  
Type Ii ◽  
Strained Layer ◽  
Strained Layer Superlattices

scholarly journals Determination of valence-band offset at cubic CdSe/ZnTe type-II heterojunctions: A combined experimental and theoretical approach

2012 ◽  
Vol 86 (19) ◽  
Author(s):  
Daniel Mourad ◽  
Jan-Peter Richters ◽  
Lionel Gérard ◽  
Régis André ◽  
Joël Bleuse ◽  
...  
Keyword(s):  
Valence Band ◽  
Theoretical Approach ◽  
Band Offset ◽  
Type Ii ◽  
Valence Band Offset
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