Diamond Nucleation During Biased Chemical Vapor Deposition

1992 ◽  
Vol 280 ◽  
Author(s):  
Roseann Csencsits ◽  
Janet Rankin ◽  
Rachel E. Boekenhauer ◽  
Michael K. Kundmann ◽  
Brian W. Sheldon
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Amorphous Film ◽  
Amorphous Layer ◽  
Carbon Layer ◽  
Diamond Nucleation

ABSTRACTThe initial stages of bias-enhanced chemical vapor deposition (CVD) of diamond were investigated in a microwave-plasma system. Samples were characterized with TEM and concurrent electron energy loss spectroscopy (EELS) to characterize chemical bonding in the deposited material. The results show that a thin amorphous carbon film is deposited during biasing, and that diamond nucleation occurs on this amorphous film. Isolated regions of crystalline SiC within the amorphous layer were also observed at longer bias times. These regions apparently form by a reaction between the amorphous carbon layer and the silicon substrate.

Microstructural evolution of diamond/Si(100) interfaces with pretreatments in chemical vapor deposition

1995 ◽  
Vol 10 (12) ◽  
pp. 3041-3049 ◽  
Author(s):  
C.J. Chen ◽  
L. Chang ◽  
T.S. Lin ◽  
F.R. Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Carbon Layer ◽  
Chemical Vapor Deposition Method ◽  
Interfacial Region ◽  
Cross Sectional ◽  
Evolution Of Microstructure

Diamond was deposited on Si(100) substrates by the microwave plasma-assisted chemical vapor deposition method in three steps: carburization, biasing, and growth. High-resolution transmission electron microscopy in cross-sectional view has been used to observe the evolution of microstructures around the interfacial region between diamond and Si in each processing step. The chemistry near the interface was characterized with elemental mapping using an energy-filtered imaging technique with electron energy loss spectroscopy. An amorphous carbon layer, β-SiC and diamond particles, and graphite plates have been observed in the carburization stage. β-SiC can form in epitaxial orientation with Si in the following stage of biasing. Graphite and amorphous carbon were not observed after the bias was applied. Diamond grains were aligned in a strongly textured condition in the growth stage. It has been found that diamond, SiC, and Si all have (111) planes in parallel. The relation of the evolution of microstructure with the processing conditions is also discussed.

Microwave plasma-assisted chemical vapor deposition of porous carbon film as supercapacitive electrodes

2017 ◽  
Vol 409 ◽  
pp. 261-269 ◽  
Author(s):  
Ai-Min Wu ◽  
Chen-Chen Feng ◽  
Hao Huang ◽  
Ramon Alberto Paredes Camacho ◽  
Song Gao ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Porous Carbon ◽  
Microwave Plasma ◽  
Carbon Film ◽  
Chemical Vapor

Competition between diamond nucleation and growth under bias voltage by microwave plasma chemical vapor deposition

CrystEngComm ◽  
2021 ◽  
Author(s):  
Weihua Wang ◽  
Bing Dai ◽  
Guoyang Shu ◽  
Yang Wang ◽  
Benjian Liu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Bias Voltage ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
High Density ◽  
Plasma Chemical ◽  
Diamond Nucleation ◽  
Plasma Chemical Vapor Deposition

Diamond nucleation on iridium (001) substrates was investigated under different bias conditions. High-density epitaxial nucleation can be obtained in a narrow bias window. This paper reports both the typical nucleation...

Defect Structure of Diamond Film at the Interface with Amorphous Carbon

1992 ◽  
Vol 270 ◽  
Author(s):  
Li Chang
Keyword(s):  
Amorphous Carbon ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Amorphous Layer ◽  
Carbon Layer ◽  
Silicon Substrates ◽  
Plasma Chemical Vapor Deposition ◽  
Diamond Crystals ◽  
Transmission Electron ◽  
Amorphous Carbon Layer

ABSTRACTDiamond films prepared by microwave plasma chemical vapor deposition, using a gas mixture of methane and hydrogen with ethanol, were formed on silicon substrates. Highresolution transmission electron microscopy was employed to characterize the microstructure at interface regions. It was found that the diamond crystals were grown on an amorphous carbon layer. Twins and stacking faults were observed at the regions interfaced with the amorphous carbon layer, suggesting that the defects may already exist in the nucleation stage and at the very first stage of growth. Also, some diamond nuclei embedded in the amorphous layer were observed.

Surface Roughness and Morphology Analysis Using an Atomic Force Microscopy of Polycrystalline Diamond Coated Si3N4 Deposited by Microwave Plasma Assisted Chemical Vapor Deposition

2008 ◽  
Vol 136 ◽  
pp. 153-160
Author(s):  
Agung Purniawan ◽  
E. Hamzah ◽  
M.R.M. Toff
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Power ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Chamber Pressure ◽  
Diamond Nucleation ◽  
Deposition Parameters

Diamond is the hardest material and has high chemical resistant which is one form of carbon. In the present work a study was carried out on polycrystalline diamond coated Si3N4 substrate. The diamond was deposited by Microwave Plasma Assisted Chemical Vapor Deposition (MPACVD) under varying deposition parameters namely CH4 diluted in H2, microwave power and chamber pressure. SEM and AFM are used to investigate the surface morphology and surface roughness. Nucleation phenomena and crystal width were also studied using AFM. Based on SEM investigation it was found that the chamber pressure and %CH4 have more significant effects on nucleation and facet of polycrystalline diamond, In addition microwave power has an effect on the diamond facet that changed from cubic to cauliflower structure. Surface roughness results show that increasing the %CH4 has decreased surface roughness 334.83 to 269.99 nm at 1 to 3% CH4, respectively. Increasing microwave power leads to increase in diamond nucleation and coalescence which lead to less surface roughness. Increasing gas pressure may eliminate Si contamination however it reduces diamond nucleation.

Characterization of chemical bonding and physical characteristics of diamond-like amorphous carbon and diamond films

1992 ◽  
Vol 7 (2) ◽  
pp. 404-410 ◽  
Author(s):  
Bharat Bhushan ◽  
Andrew J. Kellock ◽  
Nam-Hee Cho ◽  
Joel W. Ager
Keyword(s):  
Chemical Vapor Deposition ◽  
Physical Properties ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Bulk Diamond

Diamond-like (amorphous) carbon (DLC) films were prepared by dc magnetron sputtering and plasma enhanced chemical vapor deposition (PECVD) and diamond films were prepared by microwave plasma enhanced chemical vapor deposition (MPECVD). For the first time, chemical and mechanical characterization of the films from each category are carried out systematically and a comparison of the chemical and physical properties is provided. We find that DLC coatings produced by PECVD are superior in microhardness and modulus of elasticity to those produced by sputtering. PECVD films contain a larger fraction of sp3-bonding than the sputtered hydrogenated carbon films. Chemical and physical properties of the diamond films appear to be close to those of bulk diamond.

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