Fabrication and Evaluation of Ternary Co-Fe-Si Structures Produced by Ion Beam Synthesis

1992 ◽  
Vol 279 ◽  
Author(s):  
Tim D. Hunt ◽  
Brian J. Sealy ◽  
Jochen Hanebeck ◽  
Karen J. Reeson ◽  
Kevin P. Homewood ◽  
...  
Keyword(s):  
Single Phase ◽  
Low Dose ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Single Species ◽  
High Dose ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Secondary Ion

ABSTRACTDual implantation of cobalt and iron into silicon (100) wafers and subsequent annealing has been used to form layers containing mixtures of CoSi2 and FeSi2. The structure and properties of the layers were followed by Secondary Ion Mass Spectrometry (SIMS), cross-sectional transmission electron microscopy (XTEM), Transmission Electron Diffraction (TED), Rutherford Backscattering Spectroscopy (RBS), and photoluminescence (PL). When a high dose of both species was implanted, segregation of the cobalt and iron occurred which for 1000°C anneals, resulted in an epitaxial layer of αFeSi2 upon a CoSi2 layer. The epitaxial quality of both of these layers was superior to those previously fabricated by single species implants. For a low dose cobalt implant followed by a high dose iron implant, a single phase solid solution was formed and segregation did not occur. Photoluminescence at 1.54 urn was observed from this layer, but with a much lower intensity and a broader line width than that from a pure βFeSi2 layer.

Iridium Silicides Formation on High Doses Ge+ Implanted Si Layers

1995 ◽  
Vol 402 ◽  
Author(s):  
G. Curello ◽  
R. Gwilliam ◽  
M. Harry ◽  
R. J. Wilson ◽  
B. J. Sealy ◽  
...  
Keyword(s):  
Low Dose ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Sige Layer ◽  
Thermal Reaction ◽  
High Dose ◽  
Cross Sectional ◽  
Projected Range

AbstractIn this work iridium silicidation of high dose Ge+ implanted Si layers has been studied. Compositional graded SiGe layers with a Ge peak concentration between 6 at.% and 12 at.% have been fabricated using 200 keV Ge+ ion implantation into (100) Si. A 20 nm thick Ir film was then deposited by e-beam evaporation with thermal reaction being performed to both regrow the implantation damage and form the silicide. The crystal quality of the SiGe layer and its interaction with the Ir film have been studied by cross-sectional Transmission Electron Microscopy (XTEM) and Rutherford Backscattering Spectrometry (RBS).Solid Phase Epitaxial Growth (SPEG) in the low dose case has produced a defect free SiGe layer with the formation of the IrSi phase. The annealing ambient was found to be critical for the silicidation. For the high dose case, as expected, strain relaxation related defects were observed to nucleate at a depth close to the projected range of the Ge+ implant and to extend up to the surface. A second rapid thermal annealing at higher temperatures, performed in forming gas, consumed most of the defective layer moving the silicide interface closer to the peak of the Ge distribution. A second low dose Ge+ implant following the metal deposition has been found to have a beneficial effect on the quality of the final interface. An amorphizing 500 keV Si+ implant followed by SPEG has finally been used to move the end of range defects far from the interface.

Orientational and Microstructural Evolution During Epitaxial Growth of Cu on Si(001) by Sputter Deposition

1992 ◽  
Vol 280 ◽  
Author(s):  
I. Hashim ◽  
B. Park ◽  
H. A. Atwater
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
High Energy ◽  
Sputter Deposition ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron

ABSTRACTEpitaxial Cu thin films have been grown on H-terminated Si(OOl) substrates at room temperature by D.C. ion-beam sputter deposition in ultrahigh vacuum. The development of orientation and microstructure during epitaxial growth from the initial stages of Cu growth up to Cu thicknesses of few hundred nm has been investigated. Analysis by in-situ reflection high energy electron diffraction, thin film x-ray diffraction, and plan-view and cross-sectional transmission electron microscopy indicates that the films are well textured with Cu(001)∥ Si(001) and Cu[100]∥ Si[110]. Interestingly, it is found that a distribution of orientations occurs at the early stages of Cu epitaxy on Si(001) surface, and that a (001) texture emerges gradually with increasing Cu thickness. The effect of silicide formation and deposition conditions on the crystalline quality of Cu epitaxy is also discussed.

Ohmic Contact Formation Mechanism in the Ge/Pd/N-GaAs System

1989 ◽  
Vol 148 ◽  
Author(s):  
E.D. Marshall ◽  
S.S. Lau ◽  
C.J. Palmstrøm ◽  
T. Sands ◽  
C.L. Schwartz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Solid Phase ◽  
Cross Sectional ◽  
Ohmic Behavior ◽  
Transmission Electron ◽  
Solid Phase Regrowth ◽  
Ohmic Contact Formation ◽  
Secondary Ion

ABSTRACTAnnealed Ge/Pd/n-GaAs samples utilizing substrates with superlattice marker layers have been analyzed using high resolution backside secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Interfacial compositional and microstructural changes have been correlated with changes in contact resistivity. The onset of good ohmic behavior is correlated with the decomposition of an intermediate epitaxial Pd4(GaAs,Ge2) phase and solid-phase regrowth of Ge-incorporated GaAs followed by growth of a thin Ge epitaxial layer.

Damage Removal Processes in Ion Implanted, Rapidly Annealed GaAs

1985 ◽  
Vol 52 ◽  
Author(s):  
D. C. Jacobson ◽  
S. J. Pearton ◽  
R. Hull ◽  
J. M. Poate ◽  
J. S. Williams
Keyword(s):  
Carrier Mobility ◽  
Secondary Ion Mass Spectrometry ◽  
High Dose ◽  
Electrical Characteristics ◽  
Dislocation Loops ◽  
Transmission Electron ◽  
Capacitance Voltage ◽  
Lattice Damage ◽  
Removal Processes ◽  
Secondary Ion

ABSTRACTThe removal of lattice damage and consequent activation by rapid thermal annealing of implanted Si, Se, Zn and Be in GaAs was investigated by capacitance-voltage profiling, Hall measurements, transmission electron microscopy (TEM), secondary ion mass spectrometry and Rutherford backscattering. The lighter species show optimum electrical characteristics at lower annealing temperatures (˜850°C for Be, ˜950°C for Si) than the heavier species (˜900°C for Zn, ˜1000°C for Se), consistent with the amount of lattice damage remaining after annealing. TEM reveals the formation of high densities (107 cm−2) of dislocation loops after 800°C, 3s anneals of high dose (1×1015 cm−2) implanted GaAs, which are gradually reduced in density after higher temperatures anneals (˜1000°C). The remaining loops do not appear to effect the electrical activation or carrier mobility in the implanted layer, the latter being comparable to bulk values.

High Dose Implantation of Nickel into Silicon

1985 ◽  
Vol 54 ◽  
Author(s):  
G. J. Campisi ◽  
H. B. DIETRICH ◽  
M. Delfino ◽  
D. K. Sadana
Keyword(s):  
Electron Microscopy ◽  
Solid Phase ◽  
Ion Beam ◽  
Depth Profiling ◽  
Silicon Wafers ◽  
High Dose ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering

ABSTRACTSeveral silicon wafers were implanted with 58Ni+ at an energy of 170 keV and a current density of 12 μA cm-2 to doses between 5 × 1015 and 1.8 × 1018 ions cm-2. The substrates were phosphorus doped n-type <100> Czochralski grown silicon wafers. The wafers were water cooled during implantation and the surface temperatures was monitored with an infrared pyrometer and controlled to < 70°C. Samples were subsequently furnace annealed at 900°C for 30 min in nitrogen. The as-implanted and annealed samples were analyzed using cross-sectional transmission electron microscopy (XTEM), Rutherford backscattering (RBS) spectroscopy, spreading resistance depth profiling (SRP), and scanning electron microscopy (SEM). Micro-crystallites of NiSi2 (2–5nm) buried within an amorphous matrix formed during the 1.5 × 1017 ions cm-2 dose implantation. For higher doses above 3 × 1017 Ni+ cm-2, ion beam sputtering occurred. After annealing, rapid diffusion of nickel and solid-phase recrystallization of the amorphous regions occurred.

Effects Of Damage-Impurity Interaction On Electrical Properties of Se+-Implanted GaAs

1980 ◽  
Vol 2 ◽  
Author(s):  
D. K. Sadana ◽  
J. Washburn ◽  
M. D. Strathman ◽  
G. R. Booker ◽  
M. H. Badawi
Keyword(s):  
Electron Microscopy ◽  
Point Defects ◽  
Secondary Ion Mass Spectrometry ◽  
Concentration Profiles ◽  
Atomic Concentration ◽  
Cross Sectional ◽  
Projected Range ◽  
Transmission Electron ◽  
Impurity Interaction ◽  
Secondary Ion

ABSTRACTInteraction of impurities with the “visible defects” in hot implanted Cr doped semi-insulating (100) GaAs has been investigated. The defects studies were performed using transmission electron microscopy (TEM) and MeV He+ channeled Rutherford backscattering. The defects distribution was obtained by 90° cross-sectional TEM (XTEM). The atomic concentration profiles of Se, and carrier-concentration and mobility profiles were obtained by secondary ion mass spectrometry (SIMS) and Hall measurements in conjunction with chemical stopping, respectively. Comparison of defects, atomic and electrical profiles, showed the formation of secondary defects at and beyond the projected range (Rp), a significant amount of Se+ diffusion beyond Rp, and compensation of electrical carriers caused mainly by the point defects present in hot implanted GaAs.

Uncoated Lvsem and Imaging Tof-Sims of Unfixed, Plunge Frozen, Freeze Dried, Fungal and Plant Material

1998 ◽  
Vol 4 (S2) ◽  
pp. 850-851
Author(s):  
E. J. Basgall ◽  
N. Winograd
Keyword(s):  
Freeze Drying ◽  
Secondary Ion Mass Spectrometry ◽  
Low Voltage ◽  
Ion Beam ◽  
Chemical Compositions ◽  
Tof Sims ◽  
Freeze Dried ◽  
Structural Preservation ◽  
Secondary Ion

A Cryosorption Freeze Drying (CFD) system was evaluated for its effectiveness in preparing delicate biological materials for both low voltage-field emission scanning electron microscopy (LVFESEM) and imaging liquid metal (Ga) ion beam, static time-of-flight, secondary ion mass spectrometry (TOF-SIMS). The primary goals of these studies were to investigate the retention of both structural and chemical integrity using fresh cryoprepared biological material which had not been exposed to any chemical fixation and which would not be coated by any conductive material in order to obtain information from the native surfaces. Duplicate chemically fixed samples were processed for comparison. LV-FESEM (2-2.5kV) was used to assess the quality of the structural preservation of the freezing and freeze drying (FD) protocols. Imaging static TOF-SIMS was used to investigate the surface chemical compositions of the biological samples.

Mn Implantation for New Applications of 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 221-224 ◽  
Author(s):  
Margareta K. Linnarsson ◽  
Jennifer Wong-Leung ◽  
Anders Hallén ◽  
S.I. Khartsev ◽  
A.M. Grishin
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Near Infrared ◽  
Secondary Ion Mass Spectrometry ◽  
Stacking Faults ◽  
Structural Disorder ◽  
High Dose ◽  
Transmission Electron ◽  
New Applications ◽  
Secondary Ion

Structural disorder and lattice recovery of high dose, manganese implanted, semi-insulating, 4H-SiC have been studied by secondary ion mass spectrometry, Rutherford backscattering in channeling directions, visible-to-near infrared optical spectroscopy as well as with transmission electron microscopy. After heat treatment at 1400 and 1600 °C, a substantial rearrangement of manganese is observed in the implanted region. However, the crystal has not been fully recovered. More disorder remains in the [11 3] compared to the [0001] channel direction. Stacking faults, voids and 3C inclusions are observed in the implanted region. A Mn containing phase has most likely formed.

The Effect of Xe Ion Beam Treatment on the Interaction Between Gold and GaAs

1992 ◽  
Vol 260 ◽  
Author(s):  
B. Pécz ◽  
G. Radnóczi ◽  
Zs. J. Horváth ◽  
P. B. Barna ◽  
Erika Jároli ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ion Beam ◽  
High Resolution Electron Microscopy ◽  
Gaas Layer ◽  
High Dose ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Ion Beam Treatment ◽  
Defective Area

ABSTRACTThe effect of the defective nature of the substrate on the alloying behaviour of Xe implanted Au(55 ran)/n-GaAs system was studied using cross sectional transmission electron microscopy.Low dose Xe implantation (700 keV, 1*1014 ions/cm2) caused the formation of about SO nm thick polycrystalline region of GaAs beneath the gold layer. Annealing the implanted sample at 450°C gold diffused through the polycrystalline GaAs region and formed large pits of Au(Ga) solid solution in the defective area of GaAs having stacking faults and twins. The formation of a regrown GaAs covering layer was observed on the top of the reacted metallization simultaneously.High dose implantation of Xe++ ions resulted in the formation of amorphous GaAs layer with a thickness of about 750 nm. Twinned regions of GaAs were observed at the amorphous - crystalline GaAs interface by high resolution electron microscopy. Ion beam caused phase transition was observed in this sample. The amorphous GaAs region recrystallized to single crystalline GaAs due to annealing at 400°C.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

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