Correlation of Optical Properties and Structural Analysis for Cobalt Silicide Layers Buried in Silicon

1992 ◽  
Vol 279 ◽  
Author(s):  
C. H. Perry ◽  
F. Lu ◽  
F. Namavar ◽  
H. P. Maruska
Keyword(s):  
Carrier Concentration ◽  
Plasma Frequency ◽  
Optical Data ◽  
Complex Dielectric Constant ◽  
Rutherford Back Scattering ◽  
Si Substrates ◽  
Back Scattering ◽  
Reflectivity Data ◽  
Anneal Temperature ◽  
Effective Carrier

ABSTRACTThe optical reflectivity from buried and exposed CoSi2 layers produced by Co ion implantation of Si substrates has been measured over the energy range 0.012–6.2 eV (0.2- 100 μm). Both unannealed and annealed layers were investigated. The complex dielectric constant of the bare CoSi2 layer was obtained from a Kramers-Kronig analysis. The plasma frequency, carrier concentration and relaxation time of the buried CoSi2 layers were obtained from classical dispersion analyses of the multicomponent reflectivity data. The effective carrier concentration derived from the optical data and the measured chaneling from Rutherford back scattering correlated with anneal temperature.

Carbon Nanotubes Grown on Metallic Wires by Cold Plasma Technique

2002 ◽  
Vol 737 ◽  
Author(s):  
D. Sarangi ◽  
A. Karimi
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Growth Conditions ◽  
Effect Of Temperature ◽  
Rutherford Back Scattering ◽  
Novel Approach ◽  
Transmission Electron ◽  
Back Scattering ◽  
Metallic Wires ◽  
Metal Wires

ABSTRACTCarbon nanotubes on metallic wires may be act as electrode for the field emission (FE) luminescent devices. Growing nanotubes on metallic wires with controlled density, length and alignment are challenging issues for this kind of devices. We, in the present investigation grow carbon nanotubes directly on the metal wires by a powerful but simple technique. A novel approach has been proposed to align nanotubes during growth. Methane, acetylene and dimethylamine have been used as source gases. With the same growth conditions (viz. pressure, growth temperature and plasma) methane does not produce any nanotube but nanotubes grown with dimethylamine show shorter length and radius than acetylene. The effect of temperature to control the radius, time to control the density, plasma conditions to align the nanotubes has been focused. Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Rutherford Back Scattering (RBS) are used to characterize the nanotubes.

Compositional Effects on the Degradation of PVD-Tisin

1997 ◽  
Vol 473 ◽  
Author(s):  
W. F. McArthur ◽  
F. Deng ◽  
K. Ring ◽  
P. M. Pattison ◽  
K. L. Kavanagh
Keyword(s):  
Phase Separation ◽  
Silicon Nitride ◽  
Electron Diffraction ◽  
Titanium Nitride ◽  
Amorphous Matrix ◽  
Barrier Material ◽  
Rutherford Back Scattering ◽  
Phase Line ◽  
Back Scattering ◽  
Target Ratio

ABSTRACTPVD-TixSiyNz films formed by reactive RF-magnetron co-sputtering of Ti and Si in Ar/N2 are evaluated as a diffusion barrier between Cu and Si. A complete range of compositions are obtained by Ti targets inlaid with Si. Film composition is controlled by the target ratio of titanium to silicon and N2 partial pressure. Electrical results versus thermal history for films of∼6–18% Si as well as the composition and microstructure as determined by Rutherford back scattering (RBS), TEM and electron diffraction are reported. These films are an amorphous matrix with imbedded nanocrystals of titanium nitride as-deposited and undergo phase separation to yield titanium nitride and silicon nitride after a 1000°C anneal. As-deposited compositions which lie above the TiN-Si3N4 phase line yield crystals of TiN. Compositions below the TiN-Si3N4 phase line yield crystals of Ti2N. Bulk resistivity as-deposited (<400μω-cm) is acceptable for use as a contact liner/barrier material and improves with annealing. Si pn-diodes metallized with 20nm Ti40Si15N45 and Cu show no significant increase in reverse leakage current at anneal temperatures below 700°C.

Interaction of Copper Film with Silicides

1990 ◽  
Vol 181 ◽  
Author(s):  
Yow-Tzong Shy ◽  
Shyam P. Murarka ◽  
Carlton L. Shepard ◽  
William A. Lanford
Keyword(s):  
Sheet Resistance ◽  
Diffusion Barrier ◽  
Room Temperature ◽  
Copper Film ◽  
Furnace Annealing ◽  
Rutherford Back Scattering ◽  
Annealing Temperatures ◽  
Back Scattering ◽  
The Stability ◽  
Stable Structures

ABSTRACTBilayers of Cu with TiSi2 and TaSi2 were tested by furnace annealing at temperatures from 200 to 500°C. Rutherford Back Scattering (RBS) technique was used to investigate the interaction between various films and determine the stability of Cu on silicide structures. The sheet resistance was also monitored. The results show that Cu on TiSi2 and TaSi2 structures are extremely stable structures at annealing temperatures in the range of room temperature to 500 °C. In such structures, therefore, there will not be a need of any diffusion barrier between Cu and the silicide films.

scholarly journals RUTHERFORD BACK SCATTERING USING HEAVY ION BEAMS

2020 ◽  
Vol 2 ◽  
pp. 229
Author(s):  
X. Aslanoglou ◽  
M. Pilakouta ◽  
P. Aloupogiannis ◽  
A. Travlos
Keyword(s):  
Heavy Ion ◽  
Ion Beams ◽  
Rutherford Back Scattering ◽  
Back Scattering

N/A

scholarly journals Effective Carrier-Concentration Tuning of SnO2 Quantum Dot Electron-Selective Layers for High-Performance Planar Perovskite Solar Cells

2018 ◽  
Vol 30 (14) ◽  
pp. 1706023 ◽  
Author(s):  
Guang Yang ◽  
Cong Chen ◽  
Fang Yao ◽  
Zhiliang Chen ◽  
Qi Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Carrier Concentration ◽  
High Performance ◽  
Perovskite Solar Cells ◽  
Effective Carrier

Preparation and Characterization of Zn-Se Bilayer Structure

2007 ◽  
Vol 31 ◽  
pp. 153-157
Author(s):  
M. Singh ◽  
J.S. Arora ◽  
Kamlendra Awasthi ◽  
R. Nathawat ◽  
Y.K. Vijay
Keyword(s):  
Grain Size ◽  
Annealing Temperature ◽  
Hexagonal Structure ◽  
Scattering Data ◽  
Bilayer Structure ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
Rutherford Back Scattering ◽  
Back Scattering

The Zn-Se bilayer structure prepared using thermal evaporation method at pressure 10-5 Torr. These films annealed in the vacuum for two hours on different constant temperatures. The optical band gap was found to be varying with annealing temperature due to removal of defects and increase in grain size. It was also observed by the X-ray diffraction pattern the grain size of the film increase with annealing temperature. The lattice constant of hexagonal structure of these films is found to be a =b=4.42Å and c=5.68Å. The dominant peaks to be at 23.2°,28° and 43.9° having values (100), (002) and (111) respectively. The Rutherford back scattering data of these films confirmed the mixing of elements with time.

The Annealing of Phosphorus-Ion-Implanted Copper Indium Disulfide by A Pulsed Electron Beam

1985 ◽  
Vol 52 ◽  
Author(s):  
J. L. Lin ◽  
J. T. Lue ◽  
H. Y. Leng ◽  
M. H. Yang ◽  
H. L. Hwang
Keyword(s):  
Electron Beam ◽  
Carrier Concentration ◽  
Hole Mobility ◽  
Etching Technique ◽  
Pulsed Electron Beam ◽  
Copper Indium Disulfide ◽  
Copper Indium ◽  
Irradiation Energy ◽  
P Type ◽  
Effective Carrier

ABSTRACTPulsed Electron beam annealing of phosphorus implanted CuInS2 has been found to be an efficient method in p-type doping of CuInS2. A sheet resistance as low as 10.1 Ω/‮, a sheet carrier concentration as high as l.0 ×1016 cm−2, and a hole mobility as high as 499 cm2 /V.s have been obtained. The irradiation energy density for the best doping condition was determined to be in the ranges between 11–13 J/cm2. Using Van der Pauw/Hall technique in conjunction with a chemical etching technique, the effective carrier concentration profiles have been determined with a maximum carrier concentration of ∼9×1019cm−3. Excellent p-n CuInS2 homojunctions have been fabricated by electron-beam pulse annealing with anideality factor of 1.75.

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