The Annealing of Phosphorus-Ion-Implanted Copper Indium Disulfide by A Pulsed Electron Beam

1985 ◽  
Vol 52 ◽  
Author(s):  
J. L. Lin ◽  
J. T. Lue ◽  
H. Y. Leng ◽  
M. H. Yang ◽  
H. L. Hwang
Keyword(s):  
Electron Beam ◽  
Carrier Concentration ◽  
Hole Mobility ◽  
Etching Technique ◽  
Pulsed Electron Beam ◽  
Copper Indium Disulfide ◽  
Copper Indium ◽  
Irradiation Energy ◽  
P Type ◽  
Effective Carrier

ABSTRACTPulsed Electron beam annealing of phosphorus implanted CuInS2 has been found to be an efficient method in p-type doping of CuInS2. A sheet resistance as low as 10.1 Ω/‮, a sheet carrier concentration as high as l.0 ×1016 cm−2, and a hole mobility as high as 499 cm2 /V.s have been obtained. The irradiation energy density for the best doping condition was determined to be in the ranges between 11–13 J/cm2. Using Van der Pauw/Hall technique in conjunction with a chemical etching technique, the effective carrier concentration profiles have been determined with a maximum carrier concentration of ∼9×1019cm−3. Excellent p-n CuInS2 homojunctions have been fabricated by electron-beam pulse annealing with anideality factor of 1.75.

Arsenic Implant Activation and Redistribution in P-Type Silicon Induced by Pulsed Electron Beam Annealing

1982 ◽  
Vol 13 ◽  
Author(s):  
D. Barbierf ◽  
M. Baghdadi ◽  
A. Laugier ◽  
A. Cachard
Keyword(s):  
Electron Beam ◽  
Carrier Concentration ◽  
Beam Energy ◽  
Energy Deposition ◽  
Liquid Silicon ◽  
Electron Beam Energy ◽  
Pulsed Electron Beam ◽  
Highly Active ◽  
P Type ◽  
Fluence Range

ABSTRACTIn this work Pulsed Electron Beam Annealing has been used to Sctivaye As implanted in (100) and (111) silicon (140 keV- 1015 cm−2 ). With a selected electron beam energy deposition profile excellent regrowth layer quality and As activation has been obtained in the 1.2–1.4 J/cm2 fluence range. As redistribution is conistent with the melting model assuming a diffusivity of 10−4 cm2/s in liquid silicon. As losses might slightly reduce the carrier concentration near the surface in the case of (100) silicon. However a shallow and highly active N+ layer have been achieved with optimized PEBA conditions.

Defect compensation in the p-type transparent oxide Ba2BiTaO6

2020 ◽  
Vol 8 (27) ◽  
pp. 9352-9357
Author(s):  
Diana Dahliah ◽  
Gian-Marco Rignanese ◽  
Geoffroy Hautier
Keyword(s):  
Carrier Concentration ◽  
Hole Mobility ◽  
Transparent Oxide ◽  
P Type

Ba2BiTaO6 is a transparent p-type oxide recently discovered and exhibiting attractive hole mobility but low carrier concentration.

Studies on Phosphorus-Implantation and the Annealing of Cadmium Telluride and Copper Indium Disulfide

1989 ◽  
Vol 147 ◽  
Author(s):  
Y. J. Hsu ◽  
H. L. Hwang ◽  
H. Y. Ueng
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Electron Beam ◽  
Cadmium Telluride ◽  
Pulse Electron Beam ◽  
Thermal Method ◽  
Pulse Electron ◽  
Paramagnetic Resonance ◽  
Copper Indium Disulfide ◽  
Copper Indium ◽  
Electron Paramagnetic

AbstractThe doping efficiencies obtained in phosphorus-implanted cadmium telluride and copper indium disulfide annealed by pulse electron beam were higher than those annealed by conventional thermal method. To get insights into this phenomenon, electron paramagnetic resonance measurements were performed for both crystals at various stages during the doping process. The results indicated that the pulse electron beam annealing could effectively eliminate the phosphorus interstitials in the implanted crystals but the thermal annealing could not. This shows the significant effect of melting crystals by pulse electron beam annealing to obtain high doping efficiencies.

Mbe-Growth of InAs and GaSb Epitaxial Layers on GaAs Substrates

1989 ◽  
Vol 145 ◽  
Author(s):  
J. R. Söderström ◽  
D.H. Chow ◽  
T.C. McGill ◽  
T.J. Watson
Keyword(s):  
Hall Effect ◽  
Carrier Concentration ◽  
Growth Parameters ◽  
Hole Mobility ◽  
Extensive Study ◽  
Semiconductor Films ◽  
Mbe Growth ◽  
Gaas Substrates ◽  
Hall Effect Measurements ◽  
P Type

AbstractWe have grown a number of InAs and GaSb bulk layers on GaAs substrates and studied the properties of the semiconductor films as a function of the various growth parameters. Preliminary results from GaSb growth are presented in addition to an extensive study of InAs growth. The films were characterized during growth by RHEED. RHEED-oscillations were observed during both InAs and GaSb growths. Hall effect measurements yielded peak electron mobilities for InAs of 18,900 cm2/Vs at 300 K and 35,000 cm2/Vs at 77 K. For GaSb the as grown layers were found to be p-type with a carrier concentration of 9x1015cm-3 and a hole mobility of 910 cm2 /Vs at 300 K.

Influence of a Pulsed Electron Beam on the Sowing Quality of Wheat

2018 ◽  
Vol 769 ◽  
pp. 172-180 ◽  
Author(s):  
Asemgul A. Isemberlinova ◽  
Artem V. Poloskov ◽  
Ivan S. Egorov ◽  
Anastasia A. Kurilova ◽  
Svetlana A. Nuzhnyh ◽  
...  
Keyword(s):  
Electron Beam ◽  
Seed Germination ◽  
Seed Treatment ◽  
Energy Input ◽  
Pulsed Electron Beam ◽  
Germination Ability ◽  
Irradiation Energy ◽  
Microbial Number ◽  
Sowing Seed

Wheat grain has been irradiated by 200 keV and 305 keV of pulsed electron beams for changing of sowing parameters. Total microbial number, germination and germination energy were compared for both of electron kinetic energy settings for the same ranges of the energy input. The electron beam of 305 keV showed better disinfecting effect for energy input values of less than 4 J/g. That mode eliminates seed germination ability after irradiation of more than 2 J/g and can be used for grain storing. The mode of 200 keV beam keeps seed germination ability up to 5 J/g with the similar disinfecting effect after the irradiation energy input of more than 4 J/g. This mode can be used for pre-sowing seed treatment procedure.

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