scholarly journals Ion and Electron Beam Processing of Condensed Molecular Solids to Form Thin Films

1992 ◽  
Vol 279 ◽  
Author(s):  
M. W. Ruckman ◽  
J. K. Mowlem ◽  
J. F. Moore ◽  
D. R. Strongin ◽  
M. Strongin
Keyword(s):  
Thin Films ◽  
Gas Phase ◽  
Ion Beam ◽  
Ion Beams ◽  
Molecular Solids ◽  
Volatile Species ◽  
Particle Beams ◽  
Charged Particle Beams ◽  
Electron Beam Processing ◽  
Physical And Chemical

ABSTRACTElectron and ion beams can be used to deposit thin films and etch surfaces using gas phase precursors. However, the generation of undesirable gas phase products and the diffusion of the reactive species beyond the region irradiated by the electron or ion beam can limit selectivity. Tn this paper, the feasibility of processing condensed precursors such as diborane, tri-methyl aluminum, ammonia and water at 78 K with low energy (100–1000 eV) electron and ion beams (Ar+, N2+ and H2+) ranging in current density from 50 nA to several μ a per cm2 is examined. It was found that boron, boron nitride and stoichiometric aluminum oxide films could be deposited from the condensed volatile species using charged particle beams and some of the physical and chemical aspects and limitations of this new technique are discussed.

scholarly journals Industrial applications of pulse power and particle beams

1989 ◽  
Vol 7 (4) ◽  
pp. 733-741 ◽  
Author(s):  
Kiyoshi Yatsui
Keyword(s):  
Surface Modification ◽  
Charged Particle ◽  
Short Wavelength ◽  
Ion Beam ◽  
Industrial Applications ◽  
Ion Beams ◽  
Pulse Power ◽  
Particle Beams ◽  
X Ray ◽  
Charged Particle Beams

An overview is given of recent progress in the industrial applications of intense pulse power and associated particle beams, except for activities in inertial confinement fusion. In particular, several topics are discussed which relate to the applications in the R&D of materials, the excitation of short wavelength lasers, the generation of charged particle beams, and the development of plasma X-ray sources.I. Applications in material processing. If intense pulsed charged particle beams are directed onto materials, only their surfaces where the beam energy is deposited are quickly heated up to very high temperatures. Using the pulsed beam in this way, we might expect to apply them in R&D of materials. Several novel attempts have been made, e.g., on the preparation of thin films by use of a high-density high-temperature plasma, surface modification by surface heating, and ion-beam mixing of multi-layers by use of the focused electron or ion beams, and so on. Furthermore, experimental studies have been done on the surface modification by ion implantation and the evaluation of the damage due to the irradiation by ion beams.II. Applications in the excitation of short wavelength lasers. Activities in the excitation of high-power, short wavelength lasers by using electron beams or ion beams have increased considerably.III. Applications in the generation of charged particle beams, and the development of plasma X-ray source. With regard to new accelerator technologies, several attempts are underway on the application of the modified betatron or the development of a convergent electron beam accelerator with a plasma cathode.

Radiofrequency Gaseous Detection Device

2000 ◽  
Vol 6 (1) ◽  
pp. 12-20 ◽  
Author(s):  
Gerasimos D. Danilatos
Keyword(s):  
Electromagnetic Field ◽  
Ion Beam ◽  
Free Electrons ◽  
Particle Beams ◽  
Charged Particle Beams ◽  
Multiple Collisions ◽  
Electron Microscopes ◽  
Ionizing Radiations ◽  
Low Pressures ◽  
Photon Signal

A radiofrequency gaseous detection device is proposed for use with instruments employing charged particle beams, such as electron microscopes and ion beam technologies, as well as for detection of ionizing radiations as in proportional counters. An alternating (oscillating) electromagnetic field in the radiofrequency range is applied in a gaseous environment of the instrument. Both the frequency and amplitude of oscillation are adjustable. The electron or ion beam interacts with a specimen and releases free electrons in the gas. Similarly, an ionizing radiation source releases free electrons in the gas. The free electrons are acted upon by the alternating electromagnetic field and undergo an oscillatory motion resulting in multiple collisions with the gas molecules, or atoms. At sufficiently low pressures, the oscillating electrons also collide with surrounding walls. These processes result in an amplified electron signal and an amplified photon signal in a controlled discharge. The amplified signals, which are proportional to the initial number of free electrons, are collected by suitable means for further processing and analysis.

Radiofrequency Gaseous Detection Device

2000 ◽  
Vol 6 (1) ◽  
pp. 12-20
Author(s):  
Gerasimos D. Danilatos
Keyword(s):  
Electromagnetic Field ◽  
Ion Beam ◽  
Free Electrons ◽  
Particle Beams ◽  
Charged Particle Beams ◽  
Multiple Collisions ◽  
Electron Microscopes ◽  
Ionizing Radiations ◽  
Low Pressures ◽  
Photon Signal

Abstract A radiofrequency gaseous detection device is proposed for use with instruments employing charged particle beams, such as electron microscopes and ion beam technologies, as well as for detection of ionizing radiations as in proportional counters. An alternating (oscillating) electromagnetic field in the radiofrequency range is applied in a gaseous environment of the instrument. Both the frequency and amplitude of oscillation are adjustable. The electron or ion beam interacts with a specimen and releases free electrons in the gas. Similarly, an ionizing radiation source releases free electrons in the gas. The free electrons are acted upon by the alternating electromagnetic field and undergo an oscillatory motion resulting in multiple collisions with the gas molecules, or atoms. At sufficiently low pressures, the oscillating electrons also collide with surrounding walls. These processes result in an amplified electron signal and an amplified photon signal in a controlled discharge. The amplified signals, which are proportional to the initial number of free electrons, are collected by suitable means for further processing and analysis.

scholarly journals Lorentz Scanning Electron/Ion Microscopy

Microscopy ◽  
2021 ◽  
Author(s):  
Ken Harada ◽  
Keiko Shimada ◽  
Yoshio Takahashi
Keyword(s):  
Electromagnetic Fields ◽  
Measurement Method ◽  
Ion Beam ◽  
Electron Holography ◽  
Force Model ◽  
Reconstruction Technique ◽  
Visualization Technique ◽  
Particle Beams ◽  
Charged Particle Beams ◽  
Scanning Electron

Abstract We have developed an observation and measurement method for spatial electromagnetic fields by using scanning electron/ion microscopes, combined with electron holography reconstruction technique. A cross-grating was installed below the specimen, and the specimens were observed under the infocus condition, and the grating was simultaneously observed under the defocus condition. Electromagnetic fields around the specimen were estimated from grating-image distortions. This method is effective for low and middle magnification and resolution ranges; furthermore, this method can in principle be realizable in any electron/ion beam instruments because it is based on the Lorentz force model for charged particle beams. Mini Abstract We have developed a visualization technique for spatial electromagnetic fields by using scanning electron/ion microscopes, combined with electron holography reconstruction technique. A specimen and a cross-grating installed below the specimen were observed simultaneously. The distorted grating image caused by electromagnetic fields around the specimen were quantitatively measured and visualized.

scholarly journals A simple model of ion beam heated ICF targets

1983 ◽  
Vol 1 (3) ◽  
pp. 231-239 ◽  
Author(s):  
R. G. Evans
Keyword(s):  
Computer Simulation ◽  
Charged Particle ◽  
Simple Model ◽  
Ion Beam ◽  
Laser Beams ◽  
Particle Beams ◽  
Charged Particle Beams ◽  
Hydrodynamic Behaviour ◽  
Temperature And Pressure ◽  
Good Agreement

A simple model is presented for the thermodynamic and hydrodynamic behaviour of solid targets heated by intense charged particle beams. The model gives the temperature and pressure generated by the beam and allows a direct comparison with the pressure generated by laser beams. The model is in good agreement with a coupled thermodynamic hydrodynamic computer simulation.

Growth of Epitaxical SiC Layers onto on and off Axis 6H SiC Substrates by Ion Beam Deposition

1989 ◽  
Vol 162 ◽  
Author(s):  
K. L. More ◽  
S. P. Withrow ◽  
T. E. Haynes ◽  
R. A. Zuhr
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
High Resolution Electron Microscopy ◽  
Ion Beams ◽  
Deposition Technique ◽  
Crystalline Perfection ◽  
Ion Beam Deposition ◽  
Resolution Electron ◽  
Silicon Ions ◽  
Beam Deposition

ABSTRACTThin films of β SiC have been grown epitaxically onto on axis (0001) 6H α SiC substrates using ion beam deposition. The ion beam deposition technique involves the direct deposition of alternating layers of 13C+ and 30Si+. The carbon and silicon ions were obtained from an ion implanter by decelerating mass analyzed ion beams to 40 eV. The SiC substrate was held at ∼973 K. Thin films of α-SiC (a mixture of α- polytypes) were obtained following deposition onto off axis (∼2°) 6H α-SiC. High resolution electron microscopy and Rutherford backscattering techniques were used to determine the structure and crystalline perfection of the resulting layers.

scholarly journals Radiation damage of thin films of YBa2Cu3O7 superconductors

2020 ◽  
Vol 6 ◽  
pp. 271
Author(s):  
R. Vlastou ◽  
E. N. Gazis ◽  
C. T. Papadopoulos ◽  
E. Liarokapis ◽  
D. Palles ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Raman Spectroscopy ◽  
Radiation Damage ◽  
Ion Beam ◽  
Ion Beams ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Critical Dose ◽  
Different Doses

The effect of ion-beam irradiation of YBa2Cu3O7 superconductors has been studied by Raman spectroscopy. The ion beams 4He, 16O and 127I have been used eat energies 4, 25 and 200 MeV, respectively, in an attempt to investigate the radi- ation damage with respect to the mass of the bombarding ions, further, different doses of irradiation have been tried for each ion beam in order to investigate at which critical dose the phase transition from crystalline to amorphous and the loss of superconductivity occur.

Combined out-of-plane and in-plane texture control in thin films using ion beam assisted deposition

2001 ◽  
Vol 16 (1) ◽  
pp. 210-216 ◽  
Author(s):  
L. Dong ◽  
D. J. Srolovitz ◽  
G. S. Was ◽  
Q. Zhao ◽  
A. D. Rollett
Keyword(s):  
Thin Films ◽  
Computer Simulation ◽  
Ion Beam ◽  
Ion Beams ◽  
High Symmetry ◽  
Complete Control ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Pole Figures ◽  
Out Of Plane

Complete control of the texture of a film during growth requires the ability to determine the in-plane and out-of-plane texture simultaneously. We present both computer simulation and experimental evidence for the simultaneous establishment of out-of-plane and in-plane texture during ion beam assisted deposition of aluminum. Channeling along 〈110〉 directions (60° from the normal) creates a {220} out-of-plane orientation rather than the thermodynamically preferred {111} orientation. The ion beam also aligned 〈220〉 directions within the plane of the film. Measured x-ray pole figures confirmed the presence of a strong out-of-plane texture and the presence of two main, twin-related, in-plane texture components. We theoretically demonstrated that it is impossible to completely control both the in-plane and out-of-plane texture with a single ion beam in high-symmetry crystals and two ion beams must be employed to ensure complete texture control.

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