Growth of Epitaxical SiC Layers onto on and off Axis 6H SiC Substrates by Ion Beam Deposition

1989 ◽  
Vol 162 ◽  
Author(s):  
K. L. More ◽  
S. P. Withrow ◽  
T. E. Haynes ◽  
R. A. Zuhr
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
High Resolution Electron Microscopy ◽  
Ion Beams ◽  
Deposition Technique ◽  
Crystalline Perfection ◽  
Ion Beam Deposition ◽  
Resolution Electron ◽  
Silicon Ions ◽  
Beam Deposition

ABSTRACTThin films of β SiC have been grown epitaxically onto on axis (0001) 6H α SiC substrates using ion beam deposition. The ion beam deposition technique involves the direct deposition of alternating layers of 13C+ and 30Si+. The carbon and silicon ions were obtained from an ion implanter by decelerating mass analyzed ion beams to 40 eV. The SiC substrate was held at ∼973 K. Thin films of α-SiC (a mixture of α- polytypes) were obtained following deposition onto off axis (∼2°) 6H α-SiC. High resolution electron microscopy and Rutherford backscattering techniques were used to determine the structure and crystalline perfection of the resulting layers.

Microstructure and Adhesion Properties of a-CN and Ti/a-CN Nanocomposite Thin Films Prepared by Hybrid Ion Beam Deposition Technique

2014 ◽  
Vol 938 ◽  
pp. 36-39
Author(s):  
P. Vijai Bharathy ◽  
Q. Yang ◽  
D. Nataraj
Keyword(s):  
Thin Films ◽  
Adhesion Strength ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Deposition Technique ◽  
Nanomechanical Properties ◽  
Ion Beam Deposition ◽  
Amorphous Carbon Nitride ◽  
Beam Deposition

Carbon based materials have attracted much for its unique surface microstructure and nanomechanical properties among researchers. In this study, the influence of microstructure on the nanomechanical properties of thin carbon based films was studied in detail. For which amorphous Carbon nitride (a-CN) and Titanium incorporated amorphous Carbon nitride (Ti/a-CN) thin films were prepared with a thickness of less than 100 nm using hybrid ion beam deposition technique. The incorporation of Ti into the a-CN matrix greatly modified the sp3/sp2 hybridized bonding ratio and it is reflected in the mechanical hardness of Ti/a-CN thin film. Most of the incorporated Ti reacts with carbon and nitrogen to form TiN and TiCN phases respectively. On the other hand, owing to the usage of energetic ion bombardment and the presence of TiN/TiCN phases in the carbon nitride matrix, the Ti/a-CN nanocomposite film shows improved adhesion strength compared to that of pure a-CN film. Overall the presence of hard metallic phase in the amorphous carbon network alters the microstructure and improves the adhesion strength of a-CN films suitable for protective coating applications.

Electron energy loss spectroscopy of diamond-like carbon thin films

1992 ◽  
Vol 50 (2) ◽  
pp. 1272-1273
Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Ion Beam Deposition ◽  
Chemistry Research ◽  
Carbon Thin Films ◽  
Electron Energy Loss ◽  
Beam Deposition

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.

Charge Assisted Deposition of Polycrystalline Silicon Thin Films by Cesium Sputter Ion Beam Deposition

2004 ◽  
Vol 43 (10) ◽  
pp. 6880-6883 ◽  
Author(s):  
Deuk Yeon Lee ◽  
Yong Hwan Kim ◽  
In Kyo Kim ◽  
Dong Joon Choi ◽  
Soon Moon Jeong ◽  
...  
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Ion Beam ◽  
Ion Beam Deposition ◽  
Silicon Thin Films ◽  
Beam Deposition
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