Controlled Growth of Superconducting Oxide Films Using Pulsed Laser Deposition

1992 ◽  
Vol 275 ◽  
Author(s):  
A. Gupta ◽  
M. Y. Chern ◽  
B. W. Hussey
Keyword(s):  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
Layer By Layer ◽  
Initial Growth ◽  
Heteroepitaxial Growth ◽  
Ybco Films ◽  
Zero Resistance

ABSTRACT:Reflection high-energy electron diffraction (RHEED) has been used to monitor the homoepitaxial growth of SrTiO3 buffer layer, and subsequent heteroepitaxial growth of YBa2CU3O7-δ (YBCO) films, on (100) SrTiO3 by pulsed laser deposition (PLD). The RHEED pattern during initial growth of SrTiO3 becomes sharper and increases in intensity, suggesting that the smoothness of the substrate is improved by growth of the buffer layer. On the smooth surface, the growth of SrTiO3 occurs in a layer-by-layer mode as indicated by the intensity oscillations of the specular beam. YBCO films have been subsequently grown on the buffer layer using a combination of pulsed molecular oxygen and a continuous source of atomic oxygen, with the average background pressure maintained as low as 1 mTorr. A sharp streaky pattern, and intensity oscillations are also observed during growth of YBCO. The YBCO films after cooling down in 1 atm of O2 are superconducting, with zero-resistance temperature of 80 K.

Growth of epitaxial β-FeSi2 thin films by pulsed laser deposition on silicon (111)

1994 ◽  
Vol 9 (11) ◽  
pp. 2733-2736 ◽  
Author(s):  
C.H. Olk ◽  
O. P. Karpenko ◽  
S. M. Yalisove ◽  
G. L. Doll ◽  
J.F. Mansfield
Keyword(s):  
Electron Diffraction ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Energy ◽  
Layer Growth ◽  
Laser Deposition ◽  
Electron Diffraction Data ◽  
Layer By Layer ◽  
Material System ◽  
Epitaxial Relationship

Epitaxial films of semiconducting iron disilicide (β-FeSi2) have been grown by pulsed laser deposition. We find that pulsed laser deposition creates conditions favorable to the formation of films with the smallest geometric misfit possessed by this material system. In situ reflection high energy electron diffraction results indicate a layer by layer growth of the silicide. Analysis of transmission electron diffraction data has determined that the films are single phase and that this growth method reproduces the epitaxial relationship: β-FeSi2 (001) ‖ Si(111).

Fabrication of SrRuO3 Epitaxial Thin Films on YBa2Cu3Ox / CeO2 / YSZ - Buffered Si Substrates by Pulsed Laser Deposition

2003 ◽  
Vol 786 ◽  
Author(s):  
Takamitsu Higuchi ◽  
Koichi Morozumi ◽  
Setsuya Iwashita ◽  
Masaya Ishida ◽  
Tatsuya Shimoda
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Process Condition ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
Epitaxial Thin Films ◽  
Rocking Curve ◽  
Si Substrates

ABSTRACTPseudocubic SrRuO3 (100) epitaxial thin films were fabricated on Si (100) with a YBa2Cu3Ox / CeO2 / YSZ (yttria-stabilized-zirconia) triple buffer layer ∼ 14 nm thick by pulsed laser deposition (PLD). Reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) revealed that the first buffer layer of YSZ (100) was epitaxially grown on naturally oxidized Si (100) substrates with the process condition of PB (base pressure) = 1×10-Torr, PO2 (oxygen partial pressure) = 5×10- Torr, and Ts (substrate temperature) = 700 °C. Higher deposition rate of YSZ in the range of 0 ∼ 0.6 nm/min brought about better crystallinity with a smaller value of a full-width at half maximum (FWHM) in the YSZ (200) rocking curve. Subsequent deposition of CeO2, YBa2Cu3Ox, and SrRuO3 resulted in an SrRuO3 (100) epitaxial thin film exhibiting good crystallinity with FWHM = 1.7° in the SrRuO3 (200) rocking curve.

Nanostructural characterization of YBCO films on metal tape with textured buffer layer fabricated by pulsed-laser deposition

2006 ◽  
Vol 41 (9) ◽  
pp. 2587-2595 ◽  
Author(s):  
T. Kato ◽  
H. Sasaki ◽  
Y. Sasaki ◽  
T. Hirayama ◽  
Y. Ikuhara ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ybco Films ◽  
Metal Tape

Mullite Diffusion Barriers for SiC-C/C Composites Produced by Pulsed Laser Deposition

1998 ◽  
Vol 555 ◽  
Author(s):  
H. Fritze ◽  
A. Schnittker ◽  
T. Witke ◽  
C. Rüscher ◽  
S. Weber ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Target Material ◽  
High Energy ◽  
Single Step ◽  
Laser Deposition ◽  
Reduced Pressure ◽  
Oxidation Rates ◽  
Energy Impact ◽  
Diffusion Parameters

AbstractPulsed Laser Deposition (PLD) allows the ablation of nonconductive and high melting point target materials and the preparation of films with complex composition. High energy impact leads to melting and evaporation of the target material in a single step. In case of mullite ablation, the flux of the metal components is stoichiometric. Under reduced pressure the oxygen content in the layers decreases. However, after a short oxidation treatment, the formation of mullite in the coating is completed, as confirmed by IR spectroscopy and XRD investigations. For a commercial Si-SiC precoated C/C material, the effectiveness of additional PLD mullite layers as outer oxidation protection is tested in the temperature range 773 K < T < 1873 K. Mullite coatings with a thickness of 2.5 pm improve the oxidation behaviour significantly. Because of SiO2 formation at the mullite-SiC interface, all samples exhibited a mass increase upon oxidation. For oxidation durations of three days, only amorphous SiO2 is formed at the mullite-SiC interface. The inward diffusion of oxygen across the outer mullite-containing layer controls the kinetics of the reaction, as was deduced from 18O diffusivity measurements in PLD mullite layers. At temperatures close to the eutectic temperature (1860 K), mullite can seal defects. The calculated oxidation rates resulting from the diffusion parameters in SiO2 and mullite are close to the thermogravimetric data.

Pulsed laser deposition method-CeO2 buffer layer for YBCO coated conductor

2003 ◽  
Vol 392-396 ◽  
pp. 796-800 ◽  
Author(s):  
Takemi Muroga ◽  
Hiroyuki Iwai ◽  
Yutaka Yamada ◽  
Teruo Izumi ◽  
Yuh Shiohara ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Coated Conductor ◽  
Deposition Method ◽  
Ybco Coated Conductor ◽  
Ceo2 Buffer Layer
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