Layer-by-layer growth of high-optical-quality ZnO epitaxy film on Si(111) substrate using a MgO/TiN buffer layer by pulsed-laser deposition

2014 ◽  
Vol 46 (4) ◽  
pp. 243-247
Author(s):  
Xia Zhang ◽  
Hong Chen ◽  
Zhi Yan ◽  
Xiying Zhou ◽  
Wensong Lin ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Optical Quality ◽  
Layer Growth ◽  
Laser Deposition ◽  
Layer By Layer ◽  
High Optical Quality

scholarly journals Layer-by-layer growth of high-optical-quality ZnO film on atomically smooth and lattice relaxed ZnO buffer layer

2003 ◽  
Vol 83 (14) ◽  
pp. 2784-2786 ◽  
Author(s):  
A. Tsukazaki ◽  
A. Ohtomo ◽  
S. Yoshida ◽  
M. Kawasaki ◽  
C. H. Chia ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Optical Quality ◽  
Layer Growth ◽  
Layer By Layer ◽  
Zno Film ◽  
High Optical Quality ◽  
Zno Buffer Layer

Growth of CaFeOX/LaFeO3 Superlattice on SrTiO3(100) Substrates

2011 ◽  
Vol 1292 ◽  
Author(s):  
Nobuyuki Iwata ◽  
Mark Huijben ◽  
Guus Rijnders ◽  
Hiroshi Yamamoto ◽  
Dave H. A. Blank
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Layer Growth ◽  
Laser Deposition ◽  
Growth Mode ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray

ABSTRACTThe CaFeOX(CFO) and LaFeO3(LFO) thin films as well as superlattices were fabricated on SrTiO3(100) substrates by pulsed laser deposition (PLD) method. The tetragonal LFO film grew with layer-by-layer growth mode until approximately 40 layers. In the case of CFO, initial three layers showed layer-by-layer growth, and afterward the growth mode was transferred to two layers-by-two layers (TLTL) growth mode. The RHEED oscillation was observed until the end of the growth, approximately 50nm. Orthorhombic twin CaFeO2.5 (CFO2.5) structure was obtained. However, it is expected that the initial three CFO layers are CaFeO3 (CFO3) with the valence of Fe4+. The CFO and LFO superlattice showed a step-terraces surface, and the superlattice satellite peaks in a 2θ-θ and reciprocal space mapping (RSM) x-ray diffraction (XRD) measurements, indicating that the clear interfaces were fabricated.

Growth of epitaxial β-FeSi2 thin films by pulsed laser deposition on silicon (111)

1994 ◽  
Vol 9 (11) ◽  
pp. 2733-2736 ◽  
Author(s):  
C.H. Olk ◽  
O. P. Karpenko ◽  
S. M. Yalisove ◽  
G. L. Doll ◽  
J.F. Mansfield
Keyword(s):  
Electron Diffraction ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Energy ◽  
Layer Growth ◽  
Laser Deposition ◽  
Electron Diffraction Data ◽  
Layer By Layer ◽  
Material System ◽  
Epitaxial Relationship

Epitaxial films of semiconducting iron disilicide (β-FeSi2) have been grown by pulsed laser deposition. We find that pulsed laser deposition creates conditions favorable to the formation of films with the smallest geometric misfit possessed by this material system. In situ reflection high energy electron diffraction results indicate a layer by layer growth of the silicide. Analysis of transmission electron diffraction data has determined that the films are single phase and that this growth method reproduces the epitaxial relationship: β-FeSi2 (001) ‖ Si(111).

High-optical-quality LiNbO 3 thin films obtained by pulsed laser deposition

1998 ◽  
Author(s):  
D. Ghica ◽  
Mariuca Gartner ◽  
F. Ciobanu ◽  
V. Nelea ◽  
C. Martin ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Optical Quality ◽  
Laser Deposition ◽  
High Optical Quality

scholarly journals Layer-By-Layer Growth for Pulsed Laser Deposition

2002 ◽  
Vol 75 (1-2) ◽  
pp. 151-157 ◽  
Author(s):  
B. Hinnemann ◽  
F. Westerhoff ◽  
D.E. Wolf
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Layer Growth ◽  
Laser Deposition ◽  
Layer By Layer

Layer-by-Layer Growth of GaN on Sapphire by Low Temperature Cyclic Pulsed Laser Deposition / Nitrogen RF Plasma

2002 ◽  
Vol 722 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
R. Schwarz ◽  
H. Alves ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Layer Growth ◽  
Laser Deposition ◽  
Rf Plasma ◽  
Liquid Gallium ◽  
Cyclic Process ◽  
Layer By Layer ◽  
Time Duration

AbstractRecently we have proposed a new layer-by-layer method for deposition of group-III nitrides from elemental precursors (Ga, N2) [1,2]. This technique is based on a two-step cyclic process, which alternates Pulsed Laser Deposition (PLD), of a liquid gallium target and nitrogen plasma treatment. In this work, we proceed on the development of this flexible cyclic deposition technique and study the influence of the power and time duration of the 1 mbar nitrogen RF plasma on the GaN thin films. The layers are deposited on pre-nitridated sapphire (0001) substrates at low deposition temperature (600° C) to minimise reevaporation. The cyclic GaN thin films thus obtained are compared in terms of crystal alignment and nitrogen incorporation. X-ray diffraction and optical transmission spectra are the selected tools used to characterise and compare the deposited films.

Sign in / Sign up

Export Citation Format

Share Document