scholarly journals Heteroepitaxial Growth of NSMO on Silicon by Pulsed Laser Deposition

2008 ◽  
Author(s):  
R Kolagani ◽  
S Friedrich
2005 ◽  
Vol 40 (19) ◽  
pp. 5139-5145 ◽  
Author(s):  
X. Z. Liu ◽  
S. M. He ◽  
D. H. Li ◽  
Q. F. Lu ◽  
Z. H. Wang ◽  
...  

2015 ◽  
Vol 594 ◽  
pp. 299-303 ◽  
Author(s):  
W.C. Liu ◽  
Y.B. Yao ◽  
X.S. Wu ◽  
F.M. Zhang ◽  
C.L. Mak

1995 ◽  
Vol 401 ◽  
Author(s):  
J. S. Yeo ◽  
K. E. Youden ◽  
T. F. Huang ◽  
L. Hesselink ◽  
J. S. Harris

AbstractEpitaxial SBN:61 films have been grown on SBN:75 and MgO substrates by pulsed laser deposition. The optical loss due to absorption is greatly reduced by increasing the oxygen pressure to 1 mbar during the cooling process. In homoepitaxy, X-ray phi scans on the (221) plane of the SBN:61 films indicate that the in-plane grains are rotated 0° or ±28° with respect to single crystalline SBN:75 substrates. Cross-section and plane view high resolution TEM reveals this crystalline relations and microstructure of SBN thin films. Pr doped SBN:61 thin films show sharp transition band at 495 nm and 607 nm in room temperature photoluminescence measurement.


1991 ◽  
Vol 30 (Part 2, No. 6B) ◽  
pp. L1136-L1138 ◽  
Author(s):  
Hirotoshi Nagata ◽  
Tadashi Tsukahara ◽  
Satoshi Gonda ◽  
Mamoru Yoshimoto ◽  
Hideomi Koinuma

2009 ◽  
Vol 48 (8) ◽  
pp. 088003 ◽  
Author(s):  
Makoto Hosaka ◽  
Yasuyuki Akita ◽  
Yuki Sugimoto ◽  
Koji Koyama ◽  
Mamoru Yoshimoto

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