Influence of precursor concentration on the structural, optical and electrical properties of indium oxide thin film prepared by a sol–gel method

2015 ◽  
Vol 345 ◽  
pp. 355-359 ◽  
Author(s):  
L.N. Lau ◽  
N.B. Ibrahim ◽  
H. Baqiah
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Indium Oxide ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Oxide Thin Film ◽  
Optical And Electrical Properties ◽  
Gel Method ◽  
Sol Gel Method ◽  
Indium Oxide Thin Film

An investigation of the microstructure, optical and electrical properties of ZITO thin film using the sol–gel method

2010 ◽  
Vol 54 (3) ◽  
pp. 347-354 ◽  
Author(s):  
K. J. Chen ◽  
F. Y. Hung ◽  
S. J. Chang ◽  
S. J. Young ◽  
Z. S. Hu ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Sol Gel ◽  
Optical And Electrical Properties ◽  
Gel Method ◽  
Sol Gel Method

Microstructural, Optical and Electrical Properties of ZnO:Sn Thin Films Deposited by Sol-Gel Method

2013 ◽  
Vol 652-654 ◽  
pp. 519-522
Author(s):  
Jun Chen ◽  
Yue Hui Hu ◽  
Hong Hao Hu ◽  
Yi Chuan Chen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Hexagonal Structure ◽  
Optical And Electrical Properties ◽  
Axis Orientation ◽  
Gel Method ◽  
Sol Gel Method ◽  
Sn Doping ◽  
Glass Substrates

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.

Stability characteristics of gallium-doped zinc-tin-oxide thin-film transistors fabricated using a sol-gel method

2013 ◽  
Vol 62 (8) ◽  
pp. 1176-1182 ◽  
Author(s):  
Jong Hoon Lee ◽  
Chang Hoi Kim ◽  
Hong Seung Kim ◽  
Jae Hoon Park ◽  
Jin Hwa Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Gel Method ◽  
Sol Gel Method ◽  
Zinc Tin Oxide

Electrical Properties of Lead Lanthanum Titanate Thin-Film Capacitors Prepared by Sol-Gel Method

1995 ◽  
Vol 34 (Part 1, No. 11) ◽  
pp. 6133-6138 ◽  
Author(s):  
Su Jae Lee ◽  
Min Su Jang ◽  
Chae Ryong Cho ◽  
Kwang Yong Kang ◽  
SeokKilHan
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Thin Film Capacitors ◽  
Lanthanum Titanate ◽  
Titanate Thin Film

Zinc Oxide Thin Film Synthesized by Sol-Gel Method

2020 ◽  
Vol 307 ◽  
pp. 51-57
Author(s):  
Amna Afiqah Nasution Hakim ◽  
Affa Rozana Abdul Rashid ◽  
N. Arsad ◽  
Aisyah Hanim Surani
Keyword(s):  
Thin Film ◽  
Uv Light ◽  
Zinc Acetate Dihydrate ◽  
Sol Gel ◽  
Dip Coating ◽  
Oxide Thin Film ◽  
Gel Method ◽  
Sol Gel Method ◽  
Crystallite Sizes ◽  
Surface Morphologies

ZnO thin films have been prepared by the dip coating sol gel method. Zinc acetate dihydrate, 2-methoxyethanol and monoethanolamine (MEA) were used as precursor, solvent and stabilizer respectively. The synthesized sample was coated on glass substrate as the molarity of the solution was kept constant at 0.1 M. The structural properties and surface morphologies of ZnO thin film were characterized by XRD and FESEM. The optical properties such as transmittance, absorbance, reflectance and refractive index were studied by using UV-Vis. The functional group of the synthesized sample were verified by using FTIR. Average crystallite sizes of the samples were calculated by using Debye-Scherrer's formula. Next, ZnO is coated on POF in order to examine the reaction towards UV light.

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