In-Vacuo Surface Analytical Study of Diamond Nucleation on Copper Vs. Silicon

1992 ◽  
Vol 270 ◽  
Author(s):  
S. D. Wolter ◽  
B. R. Stoner ◽  
G.-H. M. Ma ◽  
J. T. Glass
Keyword(s):  
Analytical Study ◽  
Surface Coverage ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Polycrystalline Copper ◽  
Subsequent Growth ◽  
Plasma Chemical ◽  
Diamond Nucleation ◽  
Plasma Chemical Vapor Deposition

ABSTRACTA study was performed on polycrystalline copper versus that of Si(100) utilizing a negative substrate bias to enhance diamond nucleation. The biasing pretreatment and subsequent growth of the diamond were performed via microwave plasma chemical vapor deposition and the initial stages of nucleation were characterized by in-vacuo surface analysis. The biasing pretreatment step proved to have a tremendous influence on the nucleation density pertaining to Si(100) substrates, however, the nucleation density on polycrystalline copper was only increased slightly. A highly graphitic surface coverage of roughly 10A was evident on the copper substrates prior to the detection of diamond and was quite stable in thickness in as early as 15 minutes of biasing. The Si(100) substrates, however, were characterized by the formation of a carbide with some form of nondiamond carbon present on the surface throughout the biasing pretreatment.

Competition between diamond nucleation and growth under bias voltage by microwave plasma chemical vapor deposition

CrystEngComm ◽  
2021 ◽  
Author(s):  
Weihua Wang ◽  
Bing Dai ◽  
Guoyang Shu ◽  
Yang Wang ◽  
Benjian Liu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Bias Voltage ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
High Density ◽  
Plasma Chemical ◽  
Diamond Nucleation ◽  
Plasma Chemical Vapor Deposition

Diamond nucleation on iridium (001) substrates was investigated under different bias conditions. High-density epitaxial nucleation can be obtained in a narrow bias window. This paper reports both the typical nucleation...

Growth of Highly (110) Oriented Diamond Film by Microwave Plasma Chemical Vapor Deposition

2018 ◽  
Vol 281 ◽  
pp. 893-899 ◽  
Author(s):  
Yi Fan Xi ◽  
Jian Huang ◽  
Ke Tang ◽  
Xin Yu Zhou ◽  
Bing Ren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates ◽  
Nucleation Stage

In this study, we propose a simple and effective approach to enhance (110) orientation in diamond films grown on (100) Si substrates by microwave plasma chemical vapor deposition. It is found that the crystalline structure of diamond films strongly rely on the CH4 concentration in the nucleation stage. Under the same growth condition, when the CH4 concentration is less than 7% (7%) in the nucleation stage, the diamond films exhibit randomly oriented structure; once the value exceeds 7%, the deposited films are strongly (110) oriented. It could be verified by experiments that the formation of (110) orientation in diamond films are related to the high nucleation density and high fraction of diamond-like carbon existing in nucleation samples.

Insights into the ion-assisted nucleation of diamond on silicon

1997 ◽  
Vol 12 (12) ◽  
pp. 3354-3366 ◽  
Author(s):  
Sean P. McGinnis ◽  
Michael A. Kelly ◽  
Stig B. Hagström
Keyword(s):  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Thermal Spike ◽  
Plasma Chemical ◽  
Ion Energy ◽  
Ion Energy Distribution ◽  
Plasma Chemical Vapor Deposition ◽  
Preferential Sputtering ◽  
Nucleation Mechanisms

The ion-assisted nucleation of diamond was studied in a microwave plasma chemical vapor deposition system to gain insights into the processes controlling this phenomenon. The dependence of the nucleation density on bias voltage and temperature, as well as experiments with an electrically isolated substrate, are consistent with an ion bombardment mechanism for diamond nucleation. However, the growth of these nuclei is dominated by neutral species rather than ions. Measurements of the bias current under various conditions also provide details on the roles of the incident ion flux and substrate electron emission during this process. Furthermore, Monte Carlo simulations of the ion energy distribution at the substrate are compared to experimental measurements. Preferential sputtering, thermal spike, and carbon subplantation nucleation mechanisms are assessed based on the experimental and modeling results.

Bombarding energy dependence of bonding structure in amorphous carbon interlayer and its effect on diamond nucleation

1999 ◽  
Vol 14 (5) ◽  
pp. 2029-2035
Author(s):  
U. C. Oh ◽  
De Gang Cheng ◽  
Fan Xiu Lu ◽  
Jung Ho Je
Keyword(s):  
Energy Dependence ◽  
Amorphous Carbon ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Diamond Nucleation ◽  
Plasma Chemical Vapor Deposition ◽  
Bonding Structure ◽  
Sputtering Power ◽  
Bombarding Energy

The bombarding energy dependence of bonding structure in amorphous carbon interlayer and its effect on diamond nucleation density (Nd) were studied. Amorphous carbon (a-C) interlayer was deposited by magnetron sputtering. Interestingly, the intensity ratio (ID/IG) of the D band (∼1400 cm−1) to the G band (∼1570 cm−1) in the Raman spectra and the optical band gap of the a-C film were found to be inversely proportional to the sputtering power, that is, to bombarding energy. When diamond was subsequently deposited at 800 °C by microwave plasma chemical vapor deposition (CVD), diamond could be grown only on the interlayers with higher ID/IG (≥2.20), and Nd was increased up to 2 × 106/cm2 with the increase of ID/IG ratio, that is, with the decrease of the bombarding energy. We experimentally confirmed that the amount of the sp3 bonded carbon clusters within the interlayer was dependent on the bombarding energy of the particles, determining the diamond nucleation density. We suggest that the transformation of the amorphous carbon into graphitic carbon should be effectively prevented for the diamond nucleation on the a-C interlayer.

Effects of hydrogenated amorphous carbon interlayer on diamond nucleation

1998 ◽  
Vol 13 (3) ◽  
pp. 596-603 ◽  
Author(s):  
W. S. Yang ◽  
T. S. Kim ◽  
Jung Ho Je
Keyword(s):  
Vapor Deposition ◽  
Atomic Hydrogen ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Carbon Clusters ◽  
Plasma Chemical ◽  
Diamond Nucleation ◽  
Plasma Chemical Vapor Deposition ◽  
Intensity Ratios ◽  
Hydrogenated Amorphous

Diamond was deposited at 850 °C by microwave plasma chemical vapor deposition (CVD) on the interlayers with various intensity ratios (ID/IG) of the D band (~1400 cm-1) to the G band (~1570 cm-1) in the Raman spectra. Diamond could be grown only on the interlayers with higher ID/IG (≤1.95), and Nd was slightly increased to 3 × 106/cm2with ID/IG. The predeposition at 350 °C, which decreased the full-width at half-maximum of the broad D band, further increased Nd to 5 × 107/cm2. With 300 ÅA Pt overlayer on the interlayer, Nd was much more enhanced to 8 × 107/cm2. We suggest the sp3 bonded carbon clusters within the interlayer contribute to diamond nucleation, but they should be survived against atomic hydrogen etching during diamond deposition by increasing the sp3/sp2 ratio, by increasing the degree in clustering, or by protecting them with overlayer.

Preparation of Magnesia Stabilized Zirconia Thin Films for Solid Oxide Fuel Cell by Microwave Plasma Chemical Vapor Deposition.

Shinku ◽  
1997 ◽  
Vol 40 (8) ◽  
pp. 660-663
Author(s):  
Hideo OKAYAMA ◽  
Tsukasa KUBO ◽  
Noritaka MOCHIZUKI ◽  
Akiyoshi NAGATA ◽  
Hiromu ISA
Keyword(s):  
Thin Films ◽  
Fuel Cell ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
Stabilized Zirconia ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition
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