Effects of hydrogenated amorphous carbon interlayer on diamond nucleation

1998 ◽  
Vol 13 (3) ◽  
pp. 596-603 ◽  
Author(s):  
W. S. Yang ◽  
T. S. Kim ◽  
Jung Ho Je
Keyword(s):  
Vapor Deposition ◽  
Atomic Hydrogen ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Carbon Clusters ◽  
Plasma Chemical ◽  
Diamond Nucleation ◽  
Plasma Chemical Vapor Deposition ◽  
Intensity Ratios ◽  
Hydrogenated Amorphous

Diamond was deposited at 850 °C by microwave plasma chemical vapor deposition (CVD) on the interlayers with various intensity ratios (ID/IG) of the D band (~1400 cm-1) to the G band (~1570 cm-1) in the Raman spectra. Diamond could be grown only on the interlayers with higher ID/IG (≤1.95), and Nd was slightly increased to 3 × 106/cm2with ID/IG. The predeposition at 350 °C, which decreased the full-width at half-maximum of the broad D band, further increased Nd to 5 × 107/cm2. With 300 ÅA Pt overlayer on the interlayer, Nd was much more enhanced to 8 × 107/cm2. We suggest the sp3 bonded carbon clusters within the interlayer contribute to diamond nucleation, but they should be survived against atomic hydrogen etching during diamond deposition by increasing the sp3/sp2 ratio, by increasing the degree in clustering, or by protecting them with overlayer.

Competition between diamond nucleation and growth under bias voltage by microwave plasma chemical vapor deposition

CrystEngComm ◽  
2021 ◽  
Author(s):  
Weihua Wang ◽  
Bing Dai ◽  
Guoyang Shu ◽  
Yang Wang ◽  
Benjian Liu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Bias Voltage ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
High Density ◽  
Plasma Chemical ◽  
Diamond Nucleation ◽  
Plasma Chemical Vapor Deposition

Diamond nucleation on iridium (001) substrates was investigated under different bias conditions. High-density epitaxial nucleation can be obtained in a narrow bias window. This paper reports both the typical nucleation...

Boron-doped hydrogenated amorphous carbon films grown by surface-wave mode microwave plasma chemical vapor deposition

2006 ◽  
Vol 15 (11-12) ◽  
pp. 1909-1912 ◽  
Author(s):  
Sudip Adhikari ◽  
Dilip C. Ghimire ◽  
Hare Ram Aryal ◽  
Sunil Adhikary ◽  
Hideo Uchida ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Wave Mode ◽  
Carbon Films ◽  
Plasma Chemical ◽  
Amorphous Carbon Films ◽  
Plasma Chemical Vapor Deposition ◽  
Boron Doped ◽  
Hydrogenated Amorphous

Effects of Preparation and Thermal Stability on Hydrogenated Amorphous Carbon Films by Microwave Plasma Chemical Vapor Deposition

2014 ◽  
Vol 1048 ◽  
pp. 378-382
Author(s):  
Hai Ying Xu ◽  
Cai Xia Kan ◽  
Feng Ming Pan ◽  
Chang Zong Miao
Keyword(s):  
Thermal Stability ◽  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Hydrogenated amorphous carbon (a-C:H) films were prepared by microwave plasma chemical vapor deposition (MW-PCVD) technique with a mixture of acetylene and hydrogen. The morphology of three-phase a-C:H films, such as graphite-like, diamond-like and polymer-like were modulated by microwave power, deposition pressure, and flow ratios. Meanwhile, annealing does not seem to change the surface morphology or the film structure. The phase transitions are not found during the different annealing temperatures, showing that a-C:H films have a good thermal stability.

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