Homoepitaxial Growth Rate Studies on Diamond (110), (111), and (100) Surfaces in a Hot-Filament Reactor

1992 ◽  
Vol 270 ◽  
Author(s):  
C. Judith Chu ◽  
Benjamin J. Bai ◽  
Norma J. Komplin ◽  
Donald E. Patterson ◽  
Mark P. D'evelyn ◽  
...  
Keyword(s):  
Growth Rate ◽  
Substrate Temperature ◽  
Growth Rates ◽  
Radical Mechanism ◽  
Effective Activation ◽  
Methyl Radical ◽  
Kcal Mole ◽  
Hot Filament ◽  
Substrate Temperatures ◽  
Methane Concentrations

ABSTRACTGrowth rates of homoepitaxial (110), (111), and (100) diamond films were experimentally determined, for the first time, in a hot filament reactor using methane and carbon tetrachloride as the carbon source. Methane concentrations from 0.07 % to 1.03 % in H2 were studied at a substrate temperature of 970°C. Growth rates were found to be crystal-face dependent with respect to methane concentration, being linear or first order for the (100)-orientation, sublinear for (110), and sigmoidal for (111). The observed growth kinetics of (111) suggest the viability of an acetylene mechanism for (111), along with the methyl radical mechanism at methane concentrations above 0.73%. CC14 concentrations from 0.06% to 0.69% in H2 were also investigated at a substrate temperature of 970°C. Growth rate behavior was similar to that of methane for all three crystal faces.The temperature dependence of the growth rates was also crystal-orientation dependent. At substrate temperatures above 730°C, growth rates are thought to be mainly transport limited, yielding effective activation energies of 8±3, 18±2, and 12±4 kcal/mole for (100), (110), and (111) orientations, respectively. At substrate temperatures below 730°C, growth rates are thought to be surface reaction rate-limited, with an overall effective activation energy of 50±19 kcal/mole for the three crystal-orientations studied.

Kinetics And Morphology Of Homoepitaxial Cvd Growth On Diamond (100) And (111)

1995 ◽  
Vol 416 ◽  
Author(s):  
R. E. Rawles ◽  
W. G. Morris ◽  
M. P. D’Evelyn
Keyword(s):  
Growth Rate ◽  
Growth Rates ◽  
Chemical Vapor ◽  
Maximum Growth ◽  
Maximum Growth Rate ◽  
Arrhenius Behavior ◽  
Oriented Growth ◽  
Relative Growth Rates ◽  
Cvd Growth ◽  
Hot Filament

ABSTRACTGrowth rates for homoepitaxy of diamond (100) and (111) by hot-filament chemical vapor deposition were measured via in situ Fizeau interferometry and the surface morphologies were subsequently characterized by atomic force microscopy (AFM). (100)-oriented growth from 0.5% CH4 in H2 exhibited pure Arrhenius behavior, with an activation energy of 17±1 kcal/mol, up to a substrate temperature of 1100°C. Addition of oxygen to the feed gas resulted in an increased growth rate below 900°C, a maximum growth rate between 900 and 1000°C, and etching (of diamond) above 1050 - 1100°C. However, the presence of oxygen apparently had less effect on the surface morphology than did the (100)-to-(111) growth rate parameter α, determined directly from the relative growth rates of (100) and (111) substrates mounted side by side. During homoepitaxial growth from 0.5% CH4 in H2 at 875°C of ca. 1-micron-thick films,α = was 2.2 without oxygen and 1.3 for growth with 0.14% O2. The (100) film grown with α = 2.2 was quite smooth, while that with α = 1.3 was covered by numerous hillocks and penetration twins. AFM analysis revealed surprisingly little difference between the (111) films despite the considerable difference in α. Implications of these results for the growth mechanism are discussed.

Quantitative In Situ Growth Measurements of Chlorine-Activated Homoepitaxial Diamond Cvd

1994 ◽  
Vol 349 ◽  
Author(s):  
Chenyu Pan ◽  
John L. Margrave ◽  
Robert H. Hauge
Keyword(s):  
Growth Rate ◽  
Substrate Temperature ◽  
Growth Rates ◽  
Diamond Growth ◽  
Flow Rates ◽  
Temperature Range ◽  
Quantitative Studies ◽  
Growth Activation ◽  
Lower Temperature

ABSTRACTIn situ quantitative studies of the effects of substrate temperature, methane and chlorine flow rates on homoepitaxial diamond growth rates on (110) surfaces in a chlorine-activated diamond CVD reactor have been carried out using a Fizeau interferometer. The temperature dependence of diamond growth rates was found to display three distinct growth activation energies, ranging from 9±2 kcal/mol in the substrate temperature of 750-950°C, to 3.2±0.2 kcal/mol in the temperature range of 300-650°C, followed by 1.2±0.2 kcal/mol in the temperature range of 102-250°C. Atomic hydrogen is believed to be the dominant activating species in the highest temperature range, and atomic chlorine is believed to be the dominant species in the lower temperature regions. Studies of the methane flow effect on diamond growth rates revealed a linearity, indicating that the diamond growth rate was of the first order in methane flows. Diamond growth rates were also found to increase linearly with the chlorine flow. At high chlorine flow rates, however, an accelerated diamond growth rate was observed. Discussion is given to explain the observed results.

Modeling and Analyzing the Temperature Field of the Swing Substrate in Miniature EACVD System

2010 ◽  
Vol 431-432 ◽  
pp. 45-48
Author(s):  
Hong Xiang Wang ◽  
Dun Wen Zuo ◽  
Wen Zhuang Lu ◽  
Feng Xu
Keyword(s):  
Heat Transfer ◽  
Growth Rate ◽  
Temperature Field ◽  
Substrate Temperature ◽  
Diamond Films ◽  
Great Influence ◽  
Swing Angle ◽  
Transfer Theory ◽  
Heat Transfer Theory ◽  
Hot Filament

The magnitude and the uniformity of the substrate temperature are the most important factors that affect the quality and the growth rate of diamond films deeply. In this paper, the model of the swing substrate temperature field is established according to the heat transfer theory in Miniature EACVD System, the effects of the hot-filament parameters and the substrate swing parameters on the magnitude and uniformity of the substrate temperature were discussed. The calculated results show that the hot-filament parameters have great influence on the magnitude of the substrate temperature , the results also show that the hot-filament number , the substrate swing angle and the distance between the hot-filament and the substrate affect the uniformity of the substrate temperature field deeply. All the results provide a basis for optimizing the parameters of deposition in Miniature EACVD System.

Mombe Growth of GaP and its Efficient Photoeniiancement at Low Temperatures

1992 ◽  
Vol 242 ◽  
Author(s):  
Masahiro Yoshimoto ◽  
Tsuzumi Tsuji ◽  
Atsushi Kajimoto ◽  
Hiroyuki Matsunami
Keyword(s):  
Growth Rate ◽  
Laser Irradiation ◽  
Growth Rates ◽  
Low Temperatures ◽  
Epitaxial Layers ◽  
Smooth Surfaces ◽  
Group Iii ◽  
Substrate Temperatures

ABSTRACTGaP epllayers grown at temperatures ranging from 420 to 500°C had smooth surfaces and streaky RHEED patterns. The decomposition of group-III sources of TEGa limits the growth rates of GaP at lower substrate temperatures(<390 °C ). The growth rate of GaP epitaxial layers was efficiently enhanced by N2∼laser irradiation at lower substrate temperatures.

Effects of Microstructure on Photoluminescence of SrS:Eu2+,SM3+ thin Films

1993 ◽  
Vol 301 ◽  
Author(s):  
Susan Z. Hua ◽  
L. Salamanca-Riba ◽  
M. Wuttig ◽  
P. K. Soltani
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Growth Rates ◽  
Growth Conditions ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Substrate Temperatures ◽  
The Eu

ABSTRACTThe microstructure and its effects on the photoluminescence properties of SrS:Eu2+,Sm3+ thin films grown with different conditions were studied by transmission electron microscopy, x-ray diffraction and photoluminescence techniques. The SrS:Eu2+,Sm3+ thin films were prepared by e-beam evaporation at different substrate temperatures and growth rates. Both of these growth conditions affect the crystallinity of the thin films. The Sm3+ emission is stronger in the films grown at higher growth rates and at an optimum substrate temperature. We believe that the stronger Sm3+ emission is due to the higher population of Sm trivalent charge states in the films. Further increase of the substrate temperature increases the grain size in the films, but has no significant effect on the PL emission properties. In contrast, the Eu2+ emission is less sensitive to growth conditions.

Mombe Growth of GaP and its Efficient Photoeniiancement at Low Temperatures

1992 ◽  
Vol 242 ◽  
Author(s):  
Masahiro Yoshimoto ◽  
Tsuzumi Tsuji ◽  
Atsushi Kajimoto ◽  
Hiroyuki Matsunami
Keyword(s):  
Growth Rate ◽  
Laser Irradiation ◽  
Growth Rates ◽  
Low Temperatures ◽  
Epitaxial Layers ◽  
Smooth Surfaces ◽  
Group Iii ◽  
Substrate Temperatures

ABSTRACTGaP epllayers grown at temperatures ranging from 420 to 500°C had smooth surfaces and streaky RHEED patterns. The decomposition of group-III sources of TEGa limits the growth rates of GaP at lower substrate temperatures(<390 °C ). The growth rate of GaP epitaxial layers was efficiently enhanced by N2∼laser irradiation at lower substrate temperatures.

Low Temperature Diamond Growth With CF4 Addition in A Hot Filament Reactor

1994 ◽  
Vol 349 ◽  
Author(s):  
Evaldo. J. Corat ◽  
V. J. Trava-Airoldi ◽  
Nélia F. Leite ◽  
Angel F.V. Peña ◽  
Vítor Baranauskas
Keyword(s):  
Growth Rate ◽  
Raman Spectroscopy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Low Temperatures ◽  
Diamond Growth ◽  
Gas Mixture ◽  
Hot Filament ◽  
Micro Balance

ABSTRACTIn this work we show that the addition of a small amount of CF4 to a regular CH4 -H2 gas mixture allows diamond growth at lower temperatures with reasonable growth rates. We used a hot filament assisted reactor and observed diamond growth with a substrate temperature as low as 390 ଌ. We present a comparative study for the growth dependence on substrate temperature with and without CF4 addition in the gas mixture. The growth rate is measured by post growth weighting with a micro balance. Raman spectroscopy, SEM and AFM images show the good quality of the films grown at low temperatures when CF4 is added to the feeding gas.

LPCVD of Silicon Nitride Films From Hexachlorodisilane and Ammonia

1987 ◽  
Vol 105 ◽  
Author(s):  
R. C. Taylor ◽  
B. A. Scot
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Silicon Nitride ◽  
Physical Properties ◽  
Growth Rates ◽  
Rate Data ◽  
Kcal Mole ◽  
Silicon Nitride Films ◽  
Kinetically Controlled ◽  
Controlled Deposition

AbstractHexachlorodisilane (Si2Cl6) has been used as an alternative to dichlorosilane and silane for growth of silicon nitride films. The films were grown at a pressure of 0.7 Torr at temperatures between 450° and 850°C. Growth rate data indicates a kinetically controlled deposition with an activation energy of 29.3 kcal/mole. Growth rates are substantially higher than those obtained from SiH2Cl2 under similar conditions, and the physical properties of the films are essentially the same. At the higher growth temperatures stoichiometric Si3N4 films with no detectable chlorine can be obtained when a NH3/Si2Cl6 ratio of 60 or greater is used.

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