Mombe Growth of GaP and its Efficient Photoeniiancement at Low Temperatures

1992 ◽  
Vol 242 ◽  
Author(s):  
Masahiro Yoshimoto ◽  
Tsuzumi Tsuji ◽  
Atsushi Kajimoto ◽  
Hiroyuki Matsunami
Keyword(s):  
Growth Rate ◽  
Laser Irradiation ◽  
Growth Rates ◽  
Low Temperatures ◽  
Epitaxial Layers ◽  
Smooth Surfaces ◽  
Group Iii ◽  
Substrate Temperatures

ABSTRACTGaP epllayers grown at temperatures ranging from 420 to 500°C had smooth surfaces and streaky RHEED patterns. The decomposition of group-III sources of TEGa limits the growth rates of GaP at lower substrate temperatures(<390 °C ). The growth rate of GaP epitaxial layers was efficiently enhanced by N2∼laser irradiation at lower substrate temperatures.

Mombe Growth of GaP and its Efficient Photoeniiancement at Low Temperatures

1992 ◽  
Vol 242 ◽  
Author(s):  
Masahiro Yoshimoto ◽  
Tsuzumi Tsuji ◽  
Atsushi Kajimoto ◽  
Hiroyuki Matsunami
Keyword(s):  
Growth Rate ◽  
Laser Irradiation ◽  
Growth Rates ◽  
Low Temperatures ◽  
Epitaxial Layers ◽  
Smooth Surfaces ◽  
Group Iii ◽  
Substrate Temperatures

ABSTRACTGaP epllayers grown at temperatures ranging from 420 to 500°C had smooth surfaces and streaky RHEED patterns. The decomposition of group-III sources of TEGa limits the growth rates of GaP at lower substrate temperatures(<390 °C ). The growth rate of GaP epitaxial layers was efficiently enhanced by N2∼laser irradiation at lower substrate temperatures.

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 115-118 ◽  
Author(s):  
Henrik Pedersen ◽  
Stefano Leone ◽  
Anne Henry ◽  
Franziska Christine Beyer ◽  
Vanya Darakchieva ◽  
...  
Keyword(s):  
Growth Rate ◽  
Linear Dependence ◽  
Growth Rates ◽  
Molar Fraction ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Single Precursor ◽  
Very High

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.

Homoepitaxial Growth Rate Studies on Diamond (110), (111), and (100) Surfaces in a Hot-Filament Reactor

1992 ◽  
Vol 270 ◽  
Author(s):  
C. Judith Chu ◽  
Benjamin J. Bai ◽  
Norma J. Komplin ◽  
Donald E. Patterson ◽  
Mark P. D'evelyn ◽  
...  
Keyword(s):  
Growth Rate ◽  
Substrate Temperature ◽  
Growth Rates ◽  
Radical Mechanism ◽  
Effective Activation ◽  
Methyl Radical ◽  
Kcal Mole ◽  
Hot Filament ◽  
Substrate Temperatures ◽  
Methane Concentrations

ABSTRACTGrowth rates of homoepitaxial (110), (111), and (100) diamond films were experimentally determined, for the first time, in a hot filament reactor using methane and carbon tetrachloride as the carbon source. Methane concentrations from 0.07 % to 1.03 % in H2 were studied at a substrate temperature of 970°C. Growth rates were found to be crystal-face dependent with respect to methane concentration, being linear or first order for the (100)-orientation, sublinear for (110), and sigmoidal for (111). The observed growth kinetics of (111) suggest the viability of an acetylene mechanism for (111), along with the methyl radical mechanism at methane concentrations above 0.73%. CC14 concentrations from 0.06% to 0.69% in H2 were also investigated at a substrate temperature of 970°C. Growth rate behavior was similar to that of methane for all three crystal faces.The temperature dependence of the growth rates was also crystal-orientation dependent. At substrate temperatures above 730°C, growth rates are thought to be mainly transport limited, yielding effective activation energies of 8±3, 18±2, and 12±4 kcal/mole for (100), (110), and (111) orientations, respectively. At substrate temperatures below 730°C, growth rates are thought to be surface reaction rate-limited, with an overall effective activation energy of 50±19 kcal/mole for the three crystal-orientations studied.

The Effect of Phosphine Pressure on the Band Gap of Ga0.5In0.5P

1994 ◽  
Vol 340 ◽  
Author(s):  
Sarah R. Kurtz ◽  
D. J. Arent ◽  
K. A. Bertness ◽  
J. M. Olson
Keyword(s):  
Growth Rate ◽  
Surface Structure ◽  
Band Gap ◽  
Surface Diffusion ◽  
Parameter Space ◽  
Growth Temperature ◽  
Growth Rates ◽  
Diffusion Length ◽  
Group V ◽  
Group Iii

ABSTRACTThe band gap of Ga0.51n0.5P is studied as a function of phosphine pressure, B-type substrate misorientation, growth rate, and growth temperature, with emphasis placed on the effect of the phosphine pressure. Over most of the parameter space explored (high temperatures, large substrate misorientations, and low growth rates), the band gap increases with decreasing phosphine. This increase is proposed to be caused by lower phosphorus coverage of the surface, resulting in a different surface structure that doesn't promote ordering. The implications of this effect on the observed variations of band gap with growth temperature, substrate misorientation, and growth rate are discussed. For regions of parameter space in which the ordering appears to be kinetically limited by surface diffusion, the band gap increases slightly with phosphine pressure, consistent with observations that increased group-V pressure decreases the group-III surface diffusion length.

MOVPE GaN Gas-Phase Chemistry for Reactor Design and Optimization

1996 ◽  
Vol 449 ◽  
Author(s):  
S. A. Safvi ◽  
J. M. Redwing ◽  
A. Thon ◽  
J. S. Flynn ◽  
M. A. Tischler ◽  
...  
Keyword(s):  
Growth Rate ◽  
Gas Phase ◽  
Growth Rates ◽  
Operating Conditions ◽  
Gas Phase Reactions ◽  
Group V ◽  
Group Iii ◽  
Design And Optimization ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

ABSTRACTThe results of gas phase decomposition studies are used to construct a chemistry model which is compared to data obtained from an experimental MOVPE reactor. A flow tube reactor is used to study gas phase reactions between trimethylgallium (TMG) and ammonia at high temperatures, characteristic to the metalorganic vapor phase epitaxy (MOVPE) of GaN. Experiments were performed to determine the effect of the mixing of the Group III precursors and Group V precursors on the growth rate, growth uniformity and film properties. Growth rates are predicted for simple reaction mechanisms and compared to those obtained experimentally. Quantification of the loss of reacting species due to oligmerization is made based on experimentally observed growth rates. The model is used to obtain trends in growth rate and uniformity with the purpose of moving towards better operating conditions.

SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor

2006 ◽  
Vol 527-529 ◽  
pp. 179-182 ◽  
Author(s):  
Stefano Leone ◽  
Marco Mauceri ◽  
Giuseppe Pistone ◽  
Giuseppe Abbondanza ◽  
F. Portuese ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Epitaxial Layer ◽  
Growth Rates ◽  
High Growth ◽  
Droplet Formation ◽  
Layer Growth ◽  
Crystal Quality ◽  
Epitaxial Layers ◽  
Carbon Precursor

4H-SiC epitaxial layers have been grown using trichlorosilane (TCS) as the silicon precursor source together with ethylene as the carbon precursor source. A higher C/Si ratio is necessary compared with the silane/ethylene system. This ratio has to be reduced especially at higher Si/H2 ratio because the step-bunching effect occurs. From the comparison with the process that uses silane as the silicon precursor, a 15% higher growth rate has been found using TCS (trichlorosilane) at the same Si/H2 ratio. Furthermore, in the TCS process, the presence of chlorine, that reduces the possibility of silicon droplet formation, allows to use a high Si/H2 ratio and then to reach high growth rates (16 *m/h). The obtained results on the growth rates, the surface roughness and the crystal quality are very promising.

Use of Vanadium Doping for Compensated and Semi-Insulating SiC Epitaxial Layers for SiC Device Applications

2012 ◽  
Vol 717-720 ◽  
pp. 133-136 ◽  
Author(s):  
Bharat Krishnan ◽  
Rooban Venkatesh K.G. Thirumalai ◽  
Siva Prasad Kotamraju ◽  
Joseph Neil Merrett ◽  
Yaroslav Koshka
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Growth Rates ◽  
Reverse Bias ◽  
Epitaxial Layers ◽  
Pin Diodes ◽  
Vanadium Doping ◽  
Device Applications ◽  
Epilayer Surface

Vanadium doping from SiCl4 source during epitaxial growth with chlorinated C and Si precursors was investigated as a mean of achieving compensated and semi-insulating epitaxial 4H-SiC layers for device applications. Thin epilayers were grown at 1450°C with a growth rate of ~6 μm/h. Experiments at 1600°C resulted in the growth rates ranging from 60 to 90 µm/h producing epilayers with thickness above 30 µm. V concentrations up to about 1017cm-3 were found safe for achieving defect-free epilayer surface morphology, however certain degradation of the crystalline quality was detected by XRD at V concentrations as low as 3-5x1015 cm-3. Controllable compensation of nitrogen donors with V acceptors provided low-doped and semi-insulating epitaxial layers. Mesa isolated PiN diodes with V-acceptor-compensated n- epilayers used as drift regions showed qualitatively normal forward- and reverse-bias behavior.

Comparison of copper sulphate pentahydrate growth rates determined by different methods

1990 ◽  
Vol 55 (7) ◽  
pp. 1691-1707 ◽  
Author(s):  
Miloslav Karel ◽  
Jiří Hostomský ◽  
Jaroslav Nývlt ◽  
Axel König
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Fluidized Bed ◽  
Growth Rates ◽  
Copper Sulphate ◽  
Crystal Growth Rate ◽  
Effect Of Temperature ◽  
Rotating Disc ◽  
Shape Factors ◽  
Data Treatment

Crystal growth rates of copper sulphate pentahydrate (CuSO4.5 H2O) determined by different authors and methods are compared. The methods included in this comparison are: (i) Measurement on a fixed crystal suspended in a streaming solution, (ii) measurement on a rotating disc, (iii) measurement in a fluidized bed, (iv) measurement in an agitated suspension. The comparison involves critical estimation of the supersaturation used in measurements, of shape factors used for data treatment and a correction for the effect of temperature. Conclusions are drawn for the choice of values to be specified when data of crystal growth rate measurements are published.

Measurement of growth rates for single crystals and pressed tablets of CuSO4.5 H2O on a rotating disc

1989 ◽  
Vol 54 (11) ◽  
pp. 2951-2961 ◽  
Author(s):  
Miloslav Karel ◽  
Jaroslav Nývlt
Keyword(s):  
Growth Rate ◽  
Single Crystal ◽  
Single Crystals ◽  
Growth Rates ◽  
Diffusion Coefficients ◽  
Preferred Orientation ◽  
Rotating Disc ◽  
Dissolution Rates ◽  
Rates Of Growth ◽  
Good Agreement

Measured growth and dissolution rates of single crystals and tablets were used to calculate the overall linear rates of growth and dissolution of CuSO4.5 H2O crystals. The growth rate for the tablet is by 20% higher than that calculated for the single crystal. It has been concluded that this difference is due to a preferred orientation of crystal faces on the tablet surface. Calculated diffusion coefficients and thicknesses of the diffusion and hydrodynamic layers in the vicinity of the growing or dissolving crystal are in good agreement with published values.

scholarly journals Accuracy of State-Level Surveillance during Emerging Outbreaks of Respiratory Viruses: A Model-Based Assessment

2021 ◽  
pp. 0272989X2110222
Author(s):  
Yuwen Gu ◽  
Elise DeDoncker ◽  
Richard VanEnk ◽  
Rajib Paul ◽  
Susan Peters ◽  
...  
Keyword(s):  
Growth Rate ◽  
Data Collection ◽  
Disease Progression ◽  
Health Care Providers ◽  
Growth Rates ◽  
State Level ◽  
Future Research ◽  
Care Providers ◽  
State Surveillance ◽  
First Come First Serve

It is long perceived that the more data collection, the more knowledge emerges about the real disease progression. During emergencies like the H1N1 and the severe acute respiratory syndrome coronavirus 2 pandemics, public health surveillance requested increased testing to address the exacerbated demand. However, it is currently unknown how accurately surveillance portrays disease progression through incidence and confirmed case trends. State surveillance, unlike commercial testing, can process specimens based on the upcoming demand (e.g., with testing restrictions). Hence, proper assessment of accuracy may lead to improvements for a robust infrastructure. Using the H1N1 pandemic experience, we developed a simulation that models the true unobserved influenza incidence trend in the State of Michigan, as well as trends observed at different data collection points of the surveillance system. We calculated the growth rate, or speed at which each trend increases during the pandemic growth phase, and we performed statistical experiments to assess the biases (or differences) between growth rates of unobserved and observed trends. We highlight the following results: 1) emergency-driven high-risk perception increases reporting, which leads to reduction of biases in the growth rates; 2) the best predicted growth rates are those estimated from the trend of specimens submitted to the surveillance point that receives reports from a variety of health care providers; and 3) under several criteria to queue specimens for viral subtyping with limited capacity, the best-performing criterion was to queue first-come, first-serve restricted to specimens with higher hospitalization risk. Under this criterion, the lab released capacity to subtype specimens for each day in the trend, which reduced the growth rate bias the most compared to other queuing criteria. Future research should investigate additional restrictions to the queue.

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