Revisiting the role of strain in solid-phase epitaxial regrowth of ion-implanted silicon

2015 ◽  
Vol 8 (2) ◽  
pp. 021302
Author(s):  
Kuan-Kan Hu ◽  
Shin-Yang Liang ◽  
Wei Yen Woon
Keyword(s):  
Solid Phase ◽  
Epitaxial Regrowth ◽  
Ion Implanted

Non-Planar Solid Phase Epitaxial Growth Processes in Ion-Implanted GaAs

1981 ◽  
Vol 10 ◽  
Author(s):  
J. S. Williams ◽  
F. M. Adams ◽  
K. G. Rossiter
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Surface Crystallization ◽  
Growth Interface ◽  
Near Surface ◽  
Epitaxial Regrowth ◽  
Reflection Electron Diffraction ◽  
Ion Implanted

High resolution ion channelling and reflection electron diffraction techniques have been used to examine details of epitaxial regrowth in Ar+-ion-implanted GaAs(100) at furnace anneal temperatures of 400°C or less. In particular, we have investigated the nature and extent of epitaxial regrowth during both isothermal and isochronal annealing for various implant energies and for implant doses above and below the amorphous threshold. Our results indicate the development of a nonplanar growth interface during annealing which may lead, ultimately, to complex near-surface crystallization processes. Consistently with our observations and recent results from other laboratories, we propose a model for the epitaxial regrowth of amorphous GaAs layers based upon non-uniform growth rates along the amorphous-crystalline interface which could arise from local stoichiometry imbalance.

Epitaxial Crystallisation of Doped Amorphous Silicon

1983 ◽  
Vol 27 ◽  
Author(s):  
R.G. Elliman ◽  
S.T. Johnson ◽  
K.T. Short ◽  
J.S. Williams
Keyword(s):  
Energy Loss ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Irradiation ◽  
Electronic Energy ◽  
Epitaxial Regrowth ◽  
Ion Implanted

ABSTRACTThis paper outlines a model to account for the influence of doping and electronic processes on the solid phase epitaxial regrowth rate of ion implanted (100) silicon. In addition we present data which illustrates good quality epitaxial crystallisation of silicon at 400°C induced by He+ ion irradiation. We tentatively suggest that electronic energy-loss processes may be responsible for this behaviour.

Peculiarities in the Epitaxial Regrowth of Ion-Implanted Si1−xGex Alloy Layers Grown on Compositionally Graded Buffers

1994 ◽  
Vol 373 ◽  
Author(s):  
M. Fyhn ◽  
S. Yu. Shiryaev ◽  
A. Nylandsted Larsen ◽  
J. Lundsgaard Hansen
Keyword(s):  
Composition Range ◽  
Solid Phase ◽  
Linear Interpolation ◽  
Lateral Position ◽  
Growth Conditions ◽  
Alloy Layer ◽  
Compositional Modulation ◽  
Epitaxial Regrowth ◽  
Transmission Electron ◽  
Ion Implanted

AbstractSolid phase epitaxial regrowth of ion-implanted relaxed Si1-xGex layers was studied as a function of alloy composition (0.15< x <0.5) by a combination of Rutherford backscattering/ channeling spectrometry and transmission electron microscopy. The samples were grown by molecular beam epitaxy on compositionally graded buffers at different growth conditions. It was found that the regrowth velocity follows an Arrhenius curve in the investigated composition range and increases with increasing Ge content. The activation energies of the epitaxial regrowth were found to be higher than those expected from a linear interpolation between the values for pure Si and Ge. It is demonstrated that the regrowth velocities in the samples grown at 550 and 750°C and with low-rotational speed of the substrate during growth depend on the lateral position on the wafer and that they can be reduced by a preannealing treatment at high temperatures (σ920°C). We suggest that these effects arise from a compositional modulation in the alloy layer and, therefore, from a symmetrized strain, which can be reduced by a high temperature annealing.

Solid phase epitaxial regrowth of ion‐implanted amorphized InP

1986 ◽  
Vol 49 (6) ◽  
pp. 316-318 ◽  
Author(s):  
C. Licoppe ◽  
Y. I. Nissim ◽  
P. Krauz ◽  
P. Henoc
Keyword(s):  
Solid Phase ◽  
Epitaxial Regrowth ◽  
Ion Implanted

Solid‐phase epitaxial regrowth of ion‐implanted layers in GaAs

1981 ◽  
Vol 39 (8) ◽  
pp. 598-600 ◽  
Author(s):  
Y. I. Nissim ◽  
L. A. Christel ◽  
T. W. Sigmon ◽  
J. F. Gibbons ◽  
T. J. Magee ◽  
...  
Keyword(s):  
Solid Phase ◽  
Epitaxial Regrowth ◽  
Ion Implanted

On the Role of Interfacial Defect Sites During Solid Phase Epitaxial Regrowth of Implantation Amorphized Silicon

1988 ◽  
Vol 100 ◽  
Author(s):  
W. O. Adekoya ◽  
M. Hage-Ali ◽  
J. C. Muller ◽  
P. Siffert
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Rutherford Backscattering ◽  
Temperature Range ◽  
Interfacial Defect ◽  
A Value ◽  
Epitaxial Regrowth ◽  
Defect Sites

ABSTRACTWe have studied the solid phase epitaxial regrowth (SPER) of implantation (31P+11B+ (73Ge+ preamorphized)) amorphized silicon in the temperature range 500–600°C induced by Rapid Thermal Annealing (RTA) using Rutherford Backscattering and channeling measurements (RBS). Our results show rate enhancements (≃ 3.5–6.5) of the velocities of regrowth in all studied cases with respect to literature-reported values for furnace-induced SPER. Also, the ratio VB/VP (velocity of regrowth in the presence of boron with respect to phosphorus) gives a value of approximately 3 in both RTA and furnace-induced kinetics. These results are explained by a model which takes into account the role of electrically-active interfacial defect sites during SPER.

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