Evidence for Electronic Energy Loss Processes Stimulating Solid Phase Epitaxial Regrowth of Spatially Isolated Amorphous Regions in Semiconductor Systems

1994 ◽  
Vol 373 ◽  
Author(s):  
I. Jencic ◽  
M. W. Bench ◽  
I. M. Robertson ◽  
M. A. Kirk
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Electron Energy ◽  
Solid Phase ◽  
Electronic Energy ◽  
Experimental Results ◽  
Dangling Bonds ◽  
Epitaxial Regrowth ◽  
Charged Defects ◽  
Threshold Displacement

AbstractSolid phase epitaxial regrowth of spatially isolated amorphous regions in Si, Ge and GaP has been stimulated by using an electron beam with energies in the range of 50 to 300 keV. In all materials, the rate at which the amorphous zones disappear decreases as the energy of the electron beam increases from 50 keV reaching a minimum below the threshold displacement voltage before it again increases with increasing electron energy. The experimental results are interpreted in terms of creation and motion of defects (dangling bonds, charged defects) along the amorphouscrystalline interface.

Epitaxial Crystallisation of Doped Amorphous Silicon

1983 ◽  
Vol 27 ◽  
Author(s):  
R.G. Elliman ◽  
S.T. Johnson ◽  
K.T. Short ◽  
J.S. Williams
Keyword(s):  
Energy Loss ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Irradiation ◽  
Electronic Energy ◽  
Epitaxial Regrowth ◽  
Ion Implanted

ABSTRACTThis paper outlines a model to account for the influence of doping and electronic processes on the solid phase epitaxial regrowth rate of ion implanted (100) silicon. In addition we present data which illustrates good quality epitaxial crystallisation of silicon at 400°C induced by He+ ion irradiation. We tentatively suggest that electronic energy-loss processes may be responsible for this behaviour.

scholarly journals Assessing electron beam sensitivity for SrTiO3 and La0.7Sr0.3MnO3 using electron energy loss spectroscopy

2016 ◽  
Vol 169 ◽  
pp. 98-106 ◽  
Author(s):  
Magnus Nord ◽  
Per Erik Vullum ◽  
Ingrid Hallsteinsen ◽  
Thomas Tybell ◽  
Randi Holmestad
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Electron Energy Loss

Low-energy electron beam induced regrowth of isolated amorphous zones in Si and Ge

1996 ◽  
Vol 11 (9) ◽  
pp. 2152-2157 ◽  
Author(s):  
I. Jenčič ◽  
I. M. Robertson
Keyword(s):  
Electron Beam ◽  
Electron Energy ◽  
Room Temperature ◽  
Electronic Excitation ◽  
Crystalline Material ◽  
Low Energy ◽  
Displacement Damage ◽  
Low Energy Electron ◽  
Threshold Displacement ◽  
Displacive Type

Spatially isolated amorphous regions in Si and Ge have been regrown at room temperature by using an electron beam with an energy less than that required to cause displacement damage in crystalline material. The rate at which the zones regrow is a function of the energy of the electron beam. As the electron energy is increased from 25 keV (lowest energy employed), the regrowth rate decreases and reaches a minimum below the threshold displacement voltage. With further increases in the electron energy, the rate again increases. It is suggested that at the lower electron energies this room temperature regrowth process is stimulated by electronic excitation rather than by displacive-type processes.

scholarly journals Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

2015 ◽  
Vol 6 ◽  
pp. 907-918 ◽  
Author(s):  
Brett B Lewis ◽  
Michael G Stanford ◽  
Jason D Fowlkes ◽  
Kevin Lester ◽  
Harald Plank ◽  
...  
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Electron Energy ◽  
Oxygen Concentration ◽  
Carbon Nanostructures ◽  
Shape Retention ◽  
Electron Beam Induced Deposition ◽  
Isotropic Carbon ◽  
Electron Energy Loss ◽  
Post Deposition

Platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IV)Me3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. In addition to purification, the post-deposition electron stimulated oxygen purification process enhances the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention.

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